APM9435K KEXIN | Alldatasheet

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Technical content

www.kexin.com.cn 1 MOSF ET P-Channel MOSFET APM9435K (APM9435KC) ■ Features

  • VDS (V) =-30V
  • ID =-4.6 A (VGS =-10V)
  • RDS(ON) ＜ 52mΩ (VGS =-10V)
  • RDS(ON) ＜ 80mΩ (VGS =-4.5V)

1 Source

2 Source

3 Source

4 Gate

5 Drain

6 Drain

7 Drain

8 Drain

0.21 +0.04 -0.02 1.50 0.15 D G D SS S DD ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current @ VGS=-10V (Note.1) ID -4.6 Pulsed Drain Current @ VGS=-10V (Note.1) IDM -20 Power Dissipation Ta=25°C 2 W Ta=100°C 0.8 Thermal Resistance.Junction- to-Ambient RthJA 62.5 ℃/W Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 PD V A Note.1: Surface Mounted on 1in pad area, t ≤ 10sec.2

www.kexin.com.cn2 MOSFET P-Channel MOSFET APM9435K (APM9435KC) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -30 V VDS=-24V, VGS=0V -1 VDS=-24V, VGS=0V, TJ=55℃ -30 Gate-Body leakage current IGSS VDS=0V, VGS=±25V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -1 -2 V VGS=-10V, ID=-4.6A (Note.1) 60 VGS=-4.5V, ID=-2A (Note.1) 95 Input Capacitance Ciss 845 Output Capacitance Coss 120 Reverse Transfer Capacitance Crss 80 Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 11.7 Ω Total Gate Charge Qg 22.5 29 Gate Source Charge Qgs 4.5 Gate Drain Charge Qgd 2 Turn-On DelayTime td(on) 8 17 Turn-On Rise Time tr 8 18 Turn-Off DelayTime td(off) 35 60 Turn-Off Fall Time tf 11 28 Maximum Body-Diode Continuous Current IS -2 A Diode Forward Voltage VSD IS=-2A,VGS=0V (Note.1) -1.3 V ns Zero Gate Voltage Drain Current IDSS μA mΩ VDD=-15V, RL=15Ω, IDS=-1A, VGEN=-10V, RG=6Ω RDS(On) Static Drain-Source On-Resistance VGS=0V, VDS=-25V, f=1MHz VGS=-10V, VDS=-15V, ID=-4.6A pF nC Note.1: Pulse test ; pulse width≤300μs, duty cycle≤2%.

www.kexin.com.cn 3 MOSF ET P-Channel MOSFET APM9435K (APM9435KC) ■ Typical Characterisitics 1E-4 1E-3 0.01 0.1 1 10 30 1E-3 0.01 0.1 Mounted on 1in pad R JA : 62.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 -ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area -VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) -ID - Drain Current (A) 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 TA=25 o C 0 20 40 60 80 100 120 140 160 TA=25 o C,VG=-10V 0.01 0.1 1 10 100 0.01 0.1 100 300 s Rds(on) Limit TA=25 o C 10ms 100ms DC 1ms Normalized Transient Thermal Resistance

www.kexin.com.cn4 MOSF ET P-Channel MOSFET APM9435K (APM9435KC) ■ Typical Characterisitics RDS(ON) - On - Resistance (m ) Drain-Source On Resistance -ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage Normalized Threshold Voltage -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Output Characteristics Transfer Characteristics -VGS - Gate - Source Voltage (V) -ID - Drain Current (A) 0 1 2 3 4 5 6 7 8 -4V -3V 0 2 4 6 8 10 12 14 16 18 20 100 110 120 130 140 VGS= -4.5V VGS= -10V 0 1 2 3 4 5 Tj=125 o C Tj=25 o C Tj=-55 o C -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS = -250uA

www.kexin.com.cn 5 MOSF ET P-Channel MOSFET APM9435K (APM9435KC) ■ Typical Characterisitics -VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) C - Capacitance (pF) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward -IS - Source Current (A) Capacitance Gate Charge QG - Gate Charge (nC) -VGS - Gate-source Voltage (V) -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 RON@Tj=25 o C: 52m VGS = -10V IDS = -4.6A 0.1 Tj=150 o C Tj=25 o C 0 5 10 15 20 25 30 200 400 600 800 1000 1200 Crss Coss Frequency=1MHz Ciss 0 4 8 12 16 20 24 VD= -15V ID= -4.6A