APM3048ADU4

APM3048ADU4 VBSEMI | Alldatasheet

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Technical content

N- and P-Channel 60-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Available  TrenchFET ® Power MOSFET  100 % R g and UIS Tested

APPLICATIONS

 CCFL Inverter PRODUCT SUMMARY VDS (V) R DS(on) (Ω) ID (A)a Qg (Typ.) N-Channel 60 0.030 at VGS = 10 V 35 6 nC0.033 at VGS = 4.5 V 30 P-Channel - 60 0.050 at VGS = - 10 V - 19 8 nC0.060 at VGS = - 4.5 V - 15 S1 G1 D1/D2 S2 G2 TO-252 D-PAK Top View Drain Connected to Tab D1/D2 N -channel P -channel Parameter Symbol Nch Limit Pch Limit Units Drain-Source Voltage VDS 60 -60 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current a TC=25°C I D 35 -20 Pulsed Drain Current b IDM 140 -80 Continuous Source Current (Diode Conduction) a TC=25°C I S 35 -20 A Power Dissipation a TC=25°C P D 50 50 W Operating Junction and Storage Temperature Range TJ, Tstg TJ, Tstg -55 to 175 °C Parameter Symbol Maximum Units Maximum Junction-to-Ambient c RθJA 50 Maximum Junction-to-Case RθJC 3 Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. V A ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) THERMAL RESISTANCE RATINGS °C/W APM3048ADU4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

Parameter Symbol Test Conditions Min Typ Max Unit VDS = VGS, ID = 250 uA 1 V VDS = VGS, ID = -250 uA -1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA VDS = 60 V, VGS = 0 V 1 VDS = -48 V, VGS = 0 V -1 VDS = 5 V, VGS = 10 V 45 A VDS = -5 V, VGS = -10 V -25 A VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 16 A 33 VGS = -10 V, ID = -10 A 50 VGS = -4.5 V, ID = -8 A 60 VDS = 15 V, ID = 20 A 15 S VDS = -15 V, ID = -10 A 11 S IS = 17 A, VGS = 0 V 0.89 V IS = -10 A, VGS = 0 V -0.98 V Total Gate Charge Qg 9 Gate-Source Charge Qgs 3 Gate-Drain Charge Qgd 4 Turn-On Delay Time td(on) 5 Rise Time tr 5 Turn-Off Delay Time td(off) 27 Fall Time tf 8 Input Capacitance Ciss 1500 Output Capacitance Coss 84 Reverse Transfer Capacitance Crss 79 Total Gate Charge Qg 10 Gate-Source Charge Qgs 5 Gate-Drain Charge Qgd 4 Turn-On Delay Time td(on) 5 Rise Time tr 4 Turn-Off Delay Time td(off) 30 Fall Time tf 11 Input Capacitance Ciss 1180 Output Capacitance Coss 84 Reverse Transfer Capacitance Crss 60 Drain-Source On-Resistance a Gate-Source Threshold Voltage Zero Gate Voltage Drain Current Diode Forward Voltage a Dynamic b nC N - Channel VDS = 30 V, RL = 1.5 Ω, ID = 20 A, VGEN = 10 V, RGEN = 6 Ω ns Static Forward Transconductance a gfs On-State Drain Current a VGS(th) ID(on) IDSS rDS(on) VSD N - Channel VDS = 30 V, VGS = 4.5 V, ID = 20 A P - Channel VDS = -30 V, VGS = 4.5 V, ID = -10 A uA mΩ mΩ P - Channel VDS = -15 V, VGS = 0 V, f = 1 Mhz pF N - Channel VDS = 15 V, VGS = 0 V, f = 1 Mhz pF nC P - Channel VDS = -30 V, RL = 3 Ω, ID = -10 A, VGEN = -10 V, RGEN = 6 Ω ns APM3048ADU4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 1.4 1.6 1.8 2.0 VGS = 10 thru 4 V 3 V VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D 0.020 0.025 0.030 0.035 0.040 0.045 0.050 0.055 0.060 0 2 4 6 8 10 12 14 16 18 20 VGS = 10 V ID - Drain Current (A) VGS = 4.5 V RDS(on) - On-Resistance (mΩ) 0 3 6 9 12 15 VDS = 30 V ID = 4.3 A - Gate-to-Source Voltage (V) Qg - T otal Gate Charge (nC) V GS Transfer Characteristics Capacitance On -Resistance vs. Junction Temperature - 55 °C 0 3.5 25 °C TC = 125 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D Crss0 300 600 900 1200 1500 0 1 02 03 04 05 06 0 Coss Ciss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 4.3 A TJ - Junction Temperature (°C) RDS(on) - On-Resistance (Normalized) APM3048ADU4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

L TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forw ard Voltage Threshold Voltage 1.0 1.4 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) VGS(th) (V) On-Resistance vs. Gate-to- Source Voltage Single Pulse Power, Junction-to-Ambient 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0 2468 10 I D = 4.3 A V GS - Gate-to-Source V oltage (V) RDS(on) - Drain-to-Source On-Resistance (mΩ) Power (W) Time (s) 1 10000.10.01 10 100 Safe Operating Area 100 0.1 1 10 100 0.001 TA = 25 °C Single Pulse - Drain Current (A)I D 0.1 *DS(on) Limited by R VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified 0.01 1 ms 10 ms 100 ms DC 100 µs 1 s 10 s APM3048ADU4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TERISTICS 25 °C, unless otherwise noted * The power d i ssipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Power Derating 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Dissipation (W) Single Pu lse Avalanche Capability 100 TA - Time In Avalanche (s) 0.0010.00010.000010.000001 IC - Peak Avalanche Current (A) TA = L . ID BV - VDD APM3048ADU4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

L TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Tr ansient Impedance, Junction-to-Ambient 10-3 10-2 1 10 60010-110-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective T ransient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90 °C/W 3. TJM - TA = PDMZthJA(t) Notes: 4. Surface Mounted PDM Normalized Th ermal Transient Impedance, Junction-to-Case 10-3 10-2 11 010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Ther mal Impedance APM3048ADU4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

CTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Dr ain Current Gate Charge 012345678 VGS = 10 thru 5 V VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D 3 V 4 V 0.00 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0 5 10 15 20 25 ID - Drain Current (A) VGS = 4.5 V VGS = 10 V RDS(on) - On-Resistance (Ω) 0 3 6 9 12 15 VDS = 30 V ID = 3.1 A - Gate-to-Source Voltage (V) Qg - T otal Gate Charge (nC) V GS Transfer Characteristics Capacitance On -Resistance vs. Junction Temperature 0123456 TC = 125 °C - 55 °C 25 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D Crss0 300 600 900 1200 1500 0 1 02 03 0 4 05 06 0 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss Ciss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 175 VGS = 10 V ID = 3.1 A TJ - Junction Temperature (°C) RDS(on) - On-Resistance (Normalized) APM3048ADU4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C , unless otherwise noted Source-Drain Diode Forw ard Voltage Threshold Voltage TJ = 25 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S TJ = 150 °C - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA Variance (V)VGS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to- Source Voltage Single Pulse Power 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 02468 1 0 ID = 3.1 A VGS - Gate-to-Source Voltage (V) RDS(on) - On-Resistance (Ω) Power (W) Time (s) 1 6001010-110-3 10010-2 Safe Operating Area, Junction-to-Case 100 0.1 1 10 100 0.01 - Drain Current (A)I D

0.1 TA = 25 °C

P(t) = 10 DC ID(on) Limited BVDSS Limited P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 P(t) = 0.0001 IDM Limited Limited by RDS(on)* VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified> APM3048ADU4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

CTERISTICS 25 °C, unless otherwise noted * The power d i ssipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Power Derating, Junct ion-to-Foot 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Dissipation (W) Single Pulse Avalanche Capability 100 TA - Time In Avalanche (s) 0.0010.00010.000010.000001 IC - Peak Avalanche Current (A)TA L . ID BV - V DD APM3048ADU4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, un less otherwise noted Normalized Thermal Tr ansient Impedance, Junction-to-Ambient 10 -3 10 -2 1 10 60010 -1 10 -4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Ef fective T ransient Ther mal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R th J A = 85 °C/W 3. T JM - T A = P DM Z th J A (t ) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM Normalized Th ermal Transient Impedance, Junction-to-Foot 10-3 10-2 11 010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Ther mal Impedance APM3048ADU4 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

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