APL502 RevD
Document overview
- Manufacturer or author: DarelB
- PDF pages: 4
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CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. G D S 050-5897 Rev B 8-2003 APT Website - http://www.advancedpower.com LINEAR MOSFET SOT-227 G S S D ISOTOP® "UL Recognized" Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec).
- Higher FBSOA
- Higher Power Dissipation
- Popular SOT-227 Package Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS STATIC ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 12V) Drain-Source On-State Resistance 2 (VGS = 12V, 26A) Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) MIN TYP MAX 500 0.09 250 ±100 UNIT Volts Amps Ohms µA nA Volts Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ T C = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C Amps mJ APL502J 500 208 ±30 ±40 568 4.55 -55 to 150 300 3000 APL502J 500V 52A 0.090ΩΩΩΩΩ
DYNAMIC CHARACTERISTICS APL502J 050-5897 Rev B 8-2003 Symbol Ciss Coss Crss td(on) tr td(off) tf MIN TYP MAX 7600 9000 1280 1810 620 930 13 26 24 48 58 87 14 17 UNIT pF ns Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = 52A @ 25°C RG = 0.6Ω Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time THERMAL CHARACTERISTICS Characteristic Junction to Case Junction to Ambient RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Maximum Torque for Device Mounting Screws and Electrical Terminations. Symbol RθJC RθJA VIsolation Torque MIN TYP MAX .22 2500 UNIT °C/W Volts lb•in
1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471
temperature. 4 Starting Tj = +25°C, L = 2.22mH, RG = 25Ω , Peak IL = 52A
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein. Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC PDM 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0.25 0.20 0.15 0.10 0.05 0.5 0.1 0.3 0.7 0.9 0.05 ZΘ JC, THERMAL IMPEDANCE (°C/W) SINGLE PULSE FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL 0.0520 0.155 0.0126 0.0261 F 0.423F 67.451F Power (Watts) Junction temp. ( ”C) RC MODEL Case temperature