APL502B2G

APL502B2 MICROSEMI | Alldatasheet

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TJ,TSTG TL IAR EAR EAS STATIC ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS All Ratings: T C = 25°C unless otherwise specifi ed. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 050-5896 Rev E 2-2010 Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 12V) Drain-Source On-State Resistance 2 (VGS = 12V, 29A) Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) MIN TYP MAX 500 0.09 250 ±100 2 4 UNIT Volts Amps Ohms μA nA Volts Symbol BV DSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) LINEAR MOSFET Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec).

• Higher FBSOA
• Higher Power Dissipation
• Popular T-MAX™ or TO-264 Package Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ T C = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C Amps mJ APL502B2_L (G) 500 232 ±30 ±40 730 5.84 -55 to 150 300 3000 T-MaxTM TO-264 G D S Microsemi Website - http://www.microsemi.com APL502B2(G) APL502L(G) 500V, 58A, 0.090Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish.

DYNAMIC CHARACTERISTICS APL502B2_L(G) 050-5896 Rev E 2-2010 Symbol Ciss Coss Crss td(on) tr td(off) tf MIN TYP MAX 7485 9000 1290 1810 617 930 13 26 27 54 56 84 16 20 UNIT pF ns Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 15V VDD = 250V ID = 29A @ 25°C RG = 0.6W Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time THERMAL CHARACTERISTICS

1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471

temperature. 4 Starting Tj = +25°C, L = 1.78mH, RG = 25W, Peak IL = 58A

2 Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%

Microsemi reserves the right to change, without notice, the specifi cations and information contained herein. 10 -5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.5 0.1 0.3 0.7 D = 0.9 0.05 ZθJC, THERMAL IMPEDANCE (°C/W) SINGLE PULSE Characteristic Junction to Case Package Weight Symbol RqJC WT MIN TYP MAX .17 0.22 5.9 UNIT °C/W oz g

VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = +125°C TJ = +25°C TJ = -55°C VGS=10V VGS=20V NORMALIZED TO VGS = 10V @ 29A 050-5896 Rev E 2-2010 Typical Performance Curves V GS, GATE-TO-SOURCE VOLTAGE (VOLTS) I D, DRAIN CURRENT (AMPERES) FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, R DS(ON) vs DRAIN CURRENT TC, CASE TEMPERATURE (°C) T J, JUNCTION TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 0 2 4 6 8 10 0 20 40 60 80 100 120 25 50 75 100 125 150 -50 0 50 100 150 1.30 1.20 1.10 1.00 0.90 0.80 0.70 1.15 1.10 1.05 1.00 0.95 0.90 APL502B2_L(G) 120 100 120 100 0 50 100 150 200 250 0 5 10 15 20 25 30 V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS FIGURE 3,LOW VOLTAGE OUTPUT CHARACTERISTICS 7 V 6 V 6.5 V VGS=10V, 15 V 5.5 V 7 V 6 V 6.5 V 5.5 V 7.5 V VGS=10, 15V 7.5 V

8 V 8 V

R DS(ON), DRAIN-TO-SOURCE ON RESISTANCE I D, DRAIN CURRENT (AMPERES) I D, DRAIN CURRENT (AMPERES) I D, DRAIN CURRENT (AMPERES) (NORMALIZED) (NORMALIZED) V GS(TH), THRESHOLD VOLTAGE BV DSS, DRAIN-TO-SOURCE BREAKDOWN R DS(ON), DRAIN-TO-SOURCE ON RESISTANCE I D, DRAIN CURRENT (AMPERES) (NORMALIZED) VOLTAGE (NORMALIZED) -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE (°C) T C, CASE TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE ID = 29A VGS = 12V 1.2 1.1 1.0 0.9 0.8 0.7 0.6 2.5 2.0 1.5 1.0 0.5 0.0