APL1001J ADPOW | Alldatasheet

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MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. SOT-227 G S S D "UL Recognized" File No. E145592 (S) APL1001J 1000V 18.0A 0.60/G87 SINGLE DIE ISOTOP® PACKAGE ISOTOP ® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV ® G D S 050-5904 Rev A 3-2000 PRELIMINARY STATIC ELECTRICAL CHARACTERISTICS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 and Inductive Current Clamped Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. APL1001J 1000 ±30 520 4.16 -55 to 150 300 Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current 2 (VDS > ID (ON) x RDS (ON) Max, VGS = 8V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS , VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS , VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS , ID = 2.5mA) MIN TYP MAX 1000 0.60 250 ±100 UNIT Volts Amps Volts Watts W/°C UNIT Volts Amps Ohms µA nA Volts Symbol VDSS ID IDM , lLM VGS PD TJ,TSTG TL Symbol BV DSS ID (ON) R DS (ON) IDSS IGSS VGS (TH) THERMAL CHARACTERISTICS Symbol R/G81JC R/G81CS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) MIN TYP MAX 0.24 0.06 UNIT °C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 APT Website - http://www.advancedpower.com

10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0.3 0.1 0.05 0.01 0.005 0.001 Z/G113JC, THERMAL IMPEDANCE ( °C/W) Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC PDM SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D=0.5 31.5 (1.240) 31.7 (1.248) Dimensions in Millimeters and (Inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * Source Drain Gate r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) * Source Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 050-5904 Rev A 3-2000 DYNAMIC CHARACTERISTICS APL1001J 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein. SAFE OPERATING AREA CHARACTERISTICS Test Conditions / Part Number VDS = 400 V, IDS = 0.813A, t = 20 sec., TC = 60°C Symbol C iss C oss C rss td(on) tr td(off) tf MIN TYP MAX 6100 780 285 UNIT pF ns Symbol SOA1 MIN TYP MAX 300 375 UNITCharacteristic Safe Operating Area Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C R G = 0.6/G87 Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Watts APT's devices are covered by one or more of the following U.S.patents:4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058