APA4501010001 COHERENT | Alldatasheet

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Technical content

SHIPMENT PACKAGING OPTIONS

  • 850 nm multimode emission
  • Data rates from DC to 25 Gb/s
  • Dual top contact configuration with common cathode electrodes
  • High reliability
  • High humidity robustness, NemoTM technology, GR468
  • compliant
  • Available as single chip, 4 and 12 channel array
  • RoHS compliant
  • Single channel and parallel fiber optical communication links
  • Transceivers, active optical cables
  • Diced wafer on UV tape on metal lead frame
  • Grip ring
  • Gel-Pak 850 nm 25 Gbps DUAL TOP CONTACT MULTIMODE VCSEL ARRAY Optoelectronic Devices APA4501010001 APA4501040001 APA4501120001

850 nm 25 Gbps DUAL TOP CONTACT MUL TIMODE VCSEL ARRAY Electro-Optical Characteristics T = 25 °C unless otherwise noted Parameter Symbol Conditions Ratings Unit Min Typ Max Threshold current Ith T = 25 °C 0.7 0.9 mA T = 0 °C - 80 °C 1.2 Slope efficiency η I = Ith + 1 mA, T = 25 °C 0.3 0.45 mW/mA I = Ith +1 mA, T = 80 °C 0.25 0.35 Optical output power Pout Iop = 6.0 mA, T = 25 °C 1.8 2.2 mW Iop = 7.0 mA, T = 80 °C 1.5 Operating voltage Uop Iop = 6 mA 2.1 2.2 V Differential resistance Rd Iop = 6 mA, T = 0 °C - 85 °C 80 90 Ω Emission wavelength λ Iop = 6.0 mA, T = 0 °C - 80 °C 840 850 860 nm Spectral width, RMS ∆λ Iop = 6 mA 0.65 nm Modulation bandwidth f3dB Iop = 6 mA, T = 25 °C 13 14.5 GHz Iop = 7 mA, T = 80 °C 12.5 13.5 Beam divergence Θ Iop = 6.0 mA, Full width 1/e2 28 33 ° Relative intensity noise RIN(OMA) Iop = 7.0 mA, ER = 4 dB, 19 GHz BW -130 -128 dB/Hz Threshold uniformity ∆Ith Range across 1x4 and 1x12 array chips 0.15 mA Slope efficiency uniformity ∆η 0.05 mW/mA Thermal Characteristics Parameter Symbol Ratings Unit Min Typ Max Wavelength tuning coefficient 0 °C - 80 °C δλ/δT 0.06 nm/K Slope efficiency variation 0 °C - 80 °C ∆ηT -0.35 %/K Thermal impedance Zth 3.0 K/mW Absolute Maximum Ratings Parameter Rating Unit Optical output power 8 mW Peak forward current (max. 10sec) 12 mA VCSEL reverse voltage 5 V Operating temperature 0 to +80 °C Storage temperature -40 to +100 °C Mounting temperature (max. 10sec) 260 °C

850 nm 25 Gbps DUAL TOP CONTACT MUL TIMODE VCSEL ARRAY N: n-contact (common cathode) P: p-contact (anode) M: mechanical pad Chip Layout Chip Outer Dimensions Parameter Min Typ Max Unit Die length, APA4501010001, APA4501010101, APA4501010201 210 230 250 µm Die length, APA4501040001, APA4501040101, APA4501040201 960 980 1000 µm Die length, APA4501120001, APA4501120101, APA4501120201 2960 2980 3000 µm Die width 260 280 300 µm Die height 135 150 165 µm

© 2023 Coherent Corp. Legal notices : coherent.com/legal sales@coherent.com www.coherent.com 850 nm 25 Gbps DUAL TOP CONTACT MUL TIMODE VCSEL ARRAY Important Notice Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by Coherent before they become applicable to any particular order or contract. In accordance with the Coherent policy of continuous improvement specifications may change without notice. Further details are available from any Coherent sales representative. Satefy Labels RoHS Compliance Coherent is fully committed to environment protection and sustainable development and has set in place a comprehensive program for removing polluting and hazardous substances from all of its products. The relevant evidence of RoHS compliance is held as part of our controlled documentation for each of our compliant products. RoHS compliance parts are available to order, please refer to the ordering information section for further details.

Ordering Information

Product Code Data Rate Description Shipment Packaging APA4501010001 25 Gb/s 850 nm 25 G MM DTC VCSEL chip Diced wafer on metal lead frame (1) APA4501040001 25 Gb/s 850 nm 25 G MM 1x4 DTC VCSEL array Diced wafer on metal lead frame (1) APA4501120001 25 Gb/s 850 nm 25 G MM 1x12 DTC VCSEL array Diced wafer on metal lead frame (1) APA4501010101 25 Gb/s 850 nm 25 G MM DTC VCSEL chip Grip ring (2) APA4501040101 25 Gb/s 850 nm 25 G MM 1x4 DTC VCSEL array Grip ring (2) APA4501120101 25 Gb/s 850 nm 25 G MM 1x12 DTC VCSEL array Grip ring (2) APA4501010201 25 Gb/s 850 nm 25 G MM DTC VCSEL chip Gel-Pak (3) APA4501040201 25 Gb/s 850 nm 25 G MM 1x4 DTC VCSEL array Gel-Pak (3) APA4501120201 25 Gb/s 850 nm 25 G MM 1x12 DTC VCSEL array Gel-Pak (3) (1) Full diced 3’’ wafer on UV tape on metal lead frame Ø 230 mm, electronic wafermap provided (standard high volume) (2) Known Good Dies on UV tape on grip ring Ø 150 mm (medium volume) (3) Known Good Dies in 2’’ Gel-Pak (low volume)