APA4301010002 COHERENT | Alldatasheet

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Technical content

SHIPMENT PACKAGING OPTIONS

  • 850 nm multimode emission
  • Low spectral width
  • Low threshold and operation current
  • High reliability
  • High humidity robustness compliant with GR468
  • Low electrical parasitics
  • Data rates from DC to 10 Gb/s
  • Dual top contact configuration with common cathode electrodes
  • Available as single chip, 4 and 12 channel array
  • RoHS compliant
  • Single channel and parallel fiber optical communication links at 10 Gb/s up to 300 m.
  • Smart cables, HDMI
  • Diced wafer on UV tape on metal lead frame
  • Grip ring
  • Gel-Pak 850 nm 10 Gbps DUAL TOP CONTACT MULTIMODE VCSEL ARRAY Optoelectronic Devices APA4301010002 APA4301040002 APA4301120002

850 nm 10 Gbps DUAL TOP CONTACT MUL TIMODE VCSEL ARRAY Electro-Optical Characteristics T = 25 °C unless otherwise noted Parameter Symbol Conditions Ratings Unit Min Typ Max Threshold current Ith 0.8 1.1 mA Slope efficiency η I = 4 mA 0.34 0.43 0.52 mW/mA Optical output power Pout Iop = 5 mA 1.4 1.8 2.2 mW Operating voltage Uop Iop = 5 mA 1.9 2.1 V Differential resistance Rd Iop = 5 mA 45 60 75 Ω Emission wavelength λ Iop = 5 mA, T = -10°C - 85°C 840 850 860 nm Spectral width, RMS ∆λ Iop = 5mA, T = -10°C - 85°C 0.4 nm Modulation bandwidth f3dB Iop = 5mA 9 GHz Rise time tr Iop = 5mA, ER = 5dB, 20% - 80% 30 35 ps Fall time tf Iop = 5 mA, ER = 5 dB, 20% - 80% 40 45 ps Capacitance C Iop = 5 mA 0.2 0.3 pF Beam divergence Θ Iop = 5 mA, Full width 1/e2 24 30 ° Relative Intensity Noise RIN(OMA) Iop = 5 mA, ER = 5 dB, 7.7 GHz bandwidth -128 dB/Hz Threshold uniformity ∆Ith Range across 1x4 and 1x12 array chips 0.15 mA Slope efficiency uniformity ∆η 0.05 mW/mA Thermal Characteristics Parameter Symbol Ratings Unit Min Typ Max Wavelength tuning coefficient δλ/δT 0.06 nm/K Slope efficiency variation 25 °C - 85 °C ∆ηT -0.5 -0.3 -0.1 %/K Thermal impedance Zth 3.0 K/mW Absolute Maximum Ratings Parameter Rating Unit Optical output power 8 mW Peak forward current (max. 10sec) 12 mA VCSEL reverse voltage 5 V Operating temperature -10 to +85 °C Storage temperature -40 to +100 °C Mounting temperature (max. 10sec) 260 °C

850 nm 10 Gbps DUAL TOP CONTACT MUL TIMODE VCSEL ARRAY Chip Outer Dimensions Parameter Min Typ Max Unit Die length, APA4301010002, APA4301010102, APA4301010202 210 230 250 µm Die length, APA4301040002, APA4301040102, APA4301040202 960 980 1000 µm Die length, APA4301120002, APA4301120102, APA4301120202 2960 2980 3000 µm Die width 260 280 300 µm Die height 135 150 165 µm N: n-contact (common cathode) P: p-contact (anode) M: mechanical pad Chip Layout

© 2024 Coherent Corp. Legal notices : coherent.com/legal sales@coherent.com www.coherent.com 850 nm 10 Gbps DUAL TOP CONTACT MUL TIMODE VCSEL ARRAY Important Notice Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by Coherent before they become applicable to any particular order or contract. In accordance with the Coherent policy of continuous improvement specifications may change without notice. Further details are available from any Coherent sales representative. Satefy Labels RoHS Compliance Coherent is fully committed to environment protection and sustainable development and has set in place a comprehensive program for removing polluting and hazardous substances from all of its products. The relevant evidence of RoHS compliance is held as part of our controlled documentation for each of our compliant products. RoHS compliance parts are available to order, please refer to the ordering information section for further details.

Ordering Information

Product Code Data Rate Description Shipment Packaging APA4301010302 10 Gb/s 850 nm 10 G MM DTC VCSEL chip Diced wafer on metal lead frame (1) APA4301040302 10 Gb/s 850 nm 10 G MM 1x4 DTC VCSEL array Diced wafer on metal lead frame (1) APA4301120302 10 Gb/s 850 nm 10 G MM 1x12 DTC VCSEL array Diced wafer on metal lead frame (1) APA4301010102 10 Gb/s 850 nm 10 G MM DTC VCSEL chip Grip ring (2) APA4301040102 10 Gb/s 850 nm 10 G MM 1x4 DTC VCSEL array Grip ring (2) APA4301120102 10 Gb/s 850 nm 10 G MM 1x12 DTC VCSEL array Grip ring (2) APA4301010202 10 Gb/s 850 nm 10 G MM DTC VCSEL chip Gel-Pak (3) APA4301040202 10 Gb/s 850 nm 10 G MM 1x4 DTC VCSEL array Gel-Pak (3) APA4301120202 10 Gb/s 850 nm 10 G MM 1x12 DTC VCSEL array Gel-Pak (3) (1) Full diced 6’’ wafer on UV tape on metal lead frame Ø 230 mm, electronic wafermap provided (standard high volume) (2) Known Good Dies on UV tape on grip ring Ø 150 mm (medium volume) (3) Known Good Dies in 2’’ Gel-Pak (low volume)