AP74701Q

Document overview

Manufacturer or author: Diodes Incorporated
PDF pages: 22

Technical content

Features

Input Voltage Ranges from 3.2V to 65V (3.9V Startup)
-33V Reverse-Battery Voltage
Charge Pump for External N-Channel Power MOSFET
20mV ANODE to CATHODE Forward Voltage Drop Control
Low Shutdown Current of 1µ A when Disabled
Low Quiescent Current of 80µ A when Enabled
Fast Reverse Current Block Response Time of < 0.75µs
2.3A Peak Gate Turn-Off Current
Active High Operation
Integrated Battery Voltage Monitoring Switch (SW)
Meet Automotive ISO7637 Transient Requirements Without Additional Input TVS Diodes (TVS Less)
ESD Protection: 2kV of HBM and 750V of CDM
AEC-Q100 Qualification Compliance with Device Temperature Grade 1 (-40°C to +125° C Ambient Operating Temperature Range)
8-Pin SOT28 Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The AP74701Q is suitable for automotive applications requiring specific change control; this part is AEC-Q100 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

Document number: DS46952 Rev. 2 - 2 2 of 22 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. AP74701Q Typical Applications Circuit AP74701Q ANODE GATE CATHODE VCP EN GND OFFON Voltage Regulator (DC/DC, LDO) Car Batt. or DC Rail SW VBAT_MON Pin Descriptions Pin Name Pin Number Function GATE 1 Gate driver out pin. Connects to gate of external nMOSFET ANODE 2 Input supply and ANODE of Ideal diode. Connects to the source of external nMOSFET VCP 3 Charge pump voltage output pin. Connect to external capacitor. SW 4 Voltage sensing switch terminal. Internal switch is ON connecting ANODE to SW when EN is high. A resistor divider from this pin to GND can be used to for adjustment for ADC full-scale range. When EN is low, the switch is OFF disconnecting the resistor divider from the battery line thereby eliminating the leakage current. GND 5 Ground pin EN 6 Enable pin. Active high NC 7 No Connect. Leave this pin float CATHODE 8 CATHODE pin. Connects to the drain of external nMOSFET Functional Block Diagram ANODE GATE EN CATHODE Gate Driver Gate Driver and Reverse Current Control Logic UVLO, Internal Rails EN VCP Charge Pump SW VA EN VDS Clamp VA VC GND AP74701Q

Document number: DS46952 Rev. 2 - 2 3 of 22 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. AP74701Q Absolute Maximum Ratings (@TA = +25° C, unless otherwise specified.) (Note 4) Symbol Parameter Ratings Unit ESD HBM Human Body ESD Protection ±2 kV ESD CDM Charged Device Model ESD Protection ± 750 V ANODE to GND Input Voltage at ANODE -(VCLAMP - 1) to +65 V SW and EN to GND Voltage at SW and EN, VANODE > 0V -0.3 to +65 V EN to GND Voltage at EN, VANODE ≤ 0V VANODE to (VANODE + 65) V SW to GND Voltage at SW, VANODE ≤ 0V VANODE to (VANODE + 0.3) V ISW SW Switch Current -1 to 3mA A GATE to ANODE Gate to Anode Voltage -0.3 to +15 V VCP to ANODE Charge Pump Voltage -0.3 to +15 V CATHODE to ANODE CATHODE to ANODE Voltage -5 to VCLAMP V TJ(max) Maximum Junction Temperature -40 to +150 °C TSTG Storage Temperature -40 to +150 °C RθJA Junction-to-Ambient Thermal Resistance (Note 5) 176.9 ° C/W RθJC(top) Junction-to-Case (Top) Thermal Resistance (Note 5) 122.0 ° C/W RθJB Junction-to-Board Thermal Resistance (Note 5) 46.0 ° C/W ΨJT Junction-to-Top Characterization Parameter (Note 5) 10.2 ° C/W ΨJB Junction-to-Board Characterization Parameter (Note 5) 44.9 ° C/W Notes: 4. Stresses greater than the Absolute Maximum Ratings specified above can cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not im plied. Device reliability can be affected by exposure to absolute maximum rating conditions for extended periods of time. 5. RJA and RJC are measured at TA = +25° C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. Recommended Operating Conditions (@TA = +25° C, unless otherwise specified.) Symbol Parameter Min Max Unit ANODE to GND Input Voltage at ANODE -33 +60 V CATHODE to GND Input Voltage at CATHODE — +60 V EN to GND Voltage at Enable Pin -33 +60 V ANODE to CATHODE ANODE to CATHODE Voltage -VCLAMP 5 V GATE to ANODE Gate to Anode Voltage 0 +15 V VCP to ANODE Charge Pump Voltage 0 +15 V CATHODE to ANODE CATHODE to ANODE Voltage — 70 V Anode Cap Input Capacitor (Note 6) 0.1 1 µF VCP to Anode Cap Charge Pump Cap (Note 6) 0.1 — µF External MOSFET VGS max Gate to Anode (Note 6) 15 — V TJ Operating Junction Temperature Range -40 +125 °C Note: 6. Refer to the typical application circuit.

Document number: DS46952 Rev. 2 - 2 4 of 22 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. AP74701Q Electrical Characteristics (TJ = -40°C to +125° C, VANODE = 12V, CVCP = 0.1µ F, VEN = 3.3V, typical values are at TJ = +25°C, unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Unit VANODE Supply VCLAMP VCATHODE – VANODE Clamp Voltage — 34 — 43 V VANODE Operating Input Voltage — 4 — 60 V VUVLO_ANODE ANODE UVLO Rising Threshold — — — 3.9 V ANODE UVLO Falling Threshold — 2.2 2.8 3.1 V VUVLO_ANODE_HYS ANODE UVLO Hysteresis — 440 — 800 mV IANODE_OFF Shutdown Supply Current VEN = 0V — 0.6 1.5 µA IANODE_Q Operating Quiescent Current — — 65 100 µA EN Input VIL_EN Enable Input Low Threshold — 0.5 0.9 1.22 V VIH_EN Enable Input High Threshold — 1.06 2 2.6 V Vhys_EN Enable Hysteresis — 0.52 — 1.35 V IEN Enable Sink Current VEN = 12V — 3 5 µA VANODE and VCATHODE by Operation Modes VACTIVE_REG Regulated Forward Threshold — 13 24 34 mV VACTIVE_FULL Threshold for Full Conduction Mode — 40 55 67 mV VACTIVE_REV Threshold for Reverse Current Blocking — -17 -11 -2 mV Gm Regulation Error AMP Transconductance (Note 7) — 1200 1800 3100 µA/V SW Switch RSW Resistance of Battery Sensing Isolation Switch 4V < VANODE ≤ 60V 25 46 90 Ω Gate Drive IGATE Peak Source Current VANODE – VCATHODE = 100mV, VGATE – VANODE = 5V 3 11 — mA Peak Sink Current VANODE – VCATHODE) = -20mV, VGATE – VANODE = 5V — 2370 — mA Regulation Max Sink Current VANODE – VCATHODE = 0V, VGATE – VANODE = 5V 2 16 — µA RDIS Discharge Switch Resistance VANODE – VCATHODE = -20mV, VGATE – VANODE = 100mV 0.4 — 2 Ω Note: 7. Parameter guaranteed by design and characterization

Document number: DS46952 Rev. 2 - 2 5 of 22 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. AP74701Q Electrical Characteristics (TJ = -40°C to +125° C, VANODE = 12V, CVCP = 0.1µ F, VEN = 3.3V, typical values are at TJ = +25°C, unless otherwise specified.) (continued) Symbol Parameter Conditions Min Typ Max Unit Charge Pump IVCP Charge Pump Source Current (Charge Pump On) VVCP – VANODE = 7V 160 220 600 µA Charge Pump Sink Current (Charge Pump Off) VVCP – VANODE = 14V — 5 10 µA VVCP – VANODE Charge Pump Voltage at VANODE = 3.2V IVCP ≤ 30µA 8 — — V Charge Pump Turn-On Voltage — 10.3 11.6 13 V Charge Pump Turn-Off Voltage — 11 13 14 V Charge Pump Enable Comparator Hysteresis — 0.4 1 1.8 V VVCP_UVLO VVCP – VANODE UV Release at Rising Edge VANODE – VCATHODE = 100mV 5.41 6.5 7.5 V VVCP – VANODE UV Threshold at Falling Edge VANODE – VCATHODE = 100mV 4.21 5.3 6 V CATHODE ICATHODE CATHODE Sink Current VANODE = 12V, VANODE – VCATHODE = -100mV — 1.7 2 µA VANODE – VCATHODE = 100mV — 1.2 2.5 µA VANODE = -14V, VDRAIN = 0V — — 2 µA VANODE = -16V, VCATHODE = 16V — — 24 µA Switching Characteristics (TJ = -40°C to +125° C, VANODE = 12V, CVCP = 0.1µ F, VEN = 3.3V, typical values are at TJ = +25°C, unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Unit Switching Characteristics tEN_DELAY Delay from Enable Switching High to Gate Turn On VVCP > VVCP_UVLO — 75 110 µs tREV_GATE Gate Turn-Off Time when Reverse Voltage is Detected (Note 8) VANODE – VCATHODE = 100mV to -100mV — 0.45 0.75 µs tFWD_GATE Gate Turn-On Time when Forward Conducting Voltage Detected (Note 8) VANODE – VCATHODE = -100mV to 700mV — 1.4 2.6 µs Note: 8. Parameter guaranteed by bench characterization

Document number: DS46952 Rev. 2 - 2 6 of 22 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. AP74701Q Switching Waveforms 0 V 3.3 V VEN VGATE VGATE - VANODE 0 V 90% tEN_DELAY 100 mV 0 V -100 mV VGATE VGATE - VANODE VANODE - VCATHODE 0 V 10% tREV_GATE VANODE > VCATHODE VANODE < VCATHODE 700 mV 0 V -100 mV VGATE VGATE - VANODE 0 V 90% tFWD_GATE VANODE - VCATHODE VANODE > VCATHODE VANODE < VCATHODE

Document number: DS46952 Rev. 2 - 2 7 of 22 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. AP74701Q Detailed Description Overview The AP74701Q ideal diode controller has all the features necessary to implement an efficient and fast reverse -polarity protection circuit while minimizing the number of external components. This ideal diode controller is paired with an external n-channel MOSFET to replace other reverse- polarity schemes such as a p-channel MOSFET or a Schottky diode. An internal charge pump is used to drive the external n-channel MOSFET to a maximum gate drive voltage of approximately 12V. The voltage drop across the MOSFET is continuously monitored between the ANODE and CATHODE pins, and the GATE to ANODE voltage is adjusted as needed to regulate the forward voltage drop at 20mV. This closed loop regulation scheme enables graceful turn-off of the MOSFET during a reverse current event and ensures zero DC reverse current flow. A fast reverse current condition is detected when the voltage across ANODE and CATHODE pins reduces below -11mV, resulting in the GATE pin being internally connected to the ANODE pin turning off the external n-channel MOSFET, and using the body diode to block any of the reverse current. An enable pin, EN, is available to place the AP74701Q in shutdown mode disabling the n-channel MOSFET and minimizing the quiescent current. When the device is enabled, an internal switch between SW and ANODE pin enables input-voltage monitoring using an external resistor divider connected to SW pin. The device integrates VDS clamp feature which enables input "TVS Less" reverse-polarity protection. Input Voltage The ANODE pin is used to power the AP74701Q's internal circuitry, typically drawing 80μA when enabled and 1μA when disabled. If the ANODE pin voltage is greater than the POR rising threshold, then AP74701Q operates in either shutdown mode or conduction mode in accordance with the EN pin voltage. The voltage from ANODE to GND is designed to vary from 65V to -33V, allowing the AP74701Q to withstand negative voltage input. Charge Pump The charge pump supplies the voltage necessary to drive the external n-channel MOSFET. An external charge pump capacitor is placed between VCAP and ANODE pins to provide energy to turn on the external MOSFET. In order for the charge pump to supply current to the external capacitor the EN pin voltage must be above the specified input high threshold, V(EN_IH). When enabled, the charge pump sources a charging current of 300μA typical. If EN pins is pulled low, then the charge pump remains disabled. To ensure t hat the external MOSFET can be driven above its specified threshold voltage, the VCAP to ANODE voltage must be above the undervoltage lockout threshold, typically 6.5V, before the internal gate driver is enabled. The initial gate driver enable delay can be calculated by following equation: 𝑇𝐷𝑅𝑉_𝐸𝑁 = 75µs + CVCP 𝑋 VVCP_UVLO 300µA where, CVCP is the charge pump capacitance connected across ANODE and VCP pins VVCP_UVLO = 6.5V (typical) To remove any chatter on the gate drive, approximately 800mV of hysteresis is added to the VCAP undervoltage lockout. The charge pump remains enabled until the VCAP to ANODE voltage reaches 12.4V, typically, at which point the charge pump is disabled decreasing the current draw on the ANODE pin. The charge pump remains disabled until the VCAP to ANODE voltage is below to 11.6V typically at which point the charge pump is enabled. The voltage between VCAP and ANODE continue to charge and discharge between 11.6V and 12.4V. By enabling and disa bling the charge pump, the operating quiescent current of the AP4701Q is reduced. When the charge pump is disabled, it sinks 5μA typically.

Document number: DS46952 Rev. 2 - 2 8 of 22 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. AP74701Q Detailed Description (continued) Gate Driver The gate driver is used to control the external n-channel MOSFET by setting the GATE to ANODE voltage to the corresponding mode of operation. There are four defined modes of operation that the gate driver operates under forward regulation, full conduction mode, reverse current protection and VDS clamp mode according to the ANODE to CATHODE voltage. The following figure depicts how the modes of operation vary according to the ANODE to CATHODE voltage of the AP74701Q. The threshold between forward regulation mode and conduction mode is when the ANODE to CATHODE voltage is 50mV. The threshold between forward regulation mode and reverse current protection mode is when the ANODE to CATHODE voltage is -11mV. The threshold between reverse current protection mode and VDS clamp mode is when the ANODE to CATHODE voltage is -39V typical. Reverse Current Protection Mode GATE to ANODE Voltage Regulated GATE connected to ANODE GATE connected to VCP Regulated Conduction Mode Full Conduction Mode 20 mV0 V 50 mV-11 mV VANODE - VCATHODE GATE regulated to maintain VDS = VCLAMP -39V VDS Clamp Mode Before the gate driver is enabled following three conditions must be achieved:

The EN pin voltage must be greater than the specified input high voltage.
The VCAP to ANODE voltage must be greater than the undervoltage lockout voltage.
The ANODE voltage must be greater than VANODE POR rising threshold. If the above conditions are not achieved, then the GATE pin is internally connected to the ANODE pin, assuring that the external MOSFET is disabled. Once these conditions are achieved the gate driver operates in the correct mode depending on the ANODE to CATHODE voltage. Enable The AP74701Q has an enable pin, EN. The enable pin allows for the gate driver to be either enabled or disabled by an external signal. If the EN pin voltage is greater than the rising threshold, the gate driver and charge pump operates as described in Gate Driver and Charge Pump sections. If the enable pin voltage is less than the input low threshold, the charge pump and gate driver are disabled placing the AP74701Q in shutdown mode. The EN pin can withstand a voltage as large as 65V and as low as -33V. This allows for the EN pin to be connected directly to the ANODE pin if enable functionality is not needed. In conditions where EN is left floating, the internal sink current of 1µA pulls EN pin low and disables the device. SW Switch The AP74701Q has "SW" pin to enable battery voltage monitoring in automotive systems. When the device is enabled, an internal switch connects SW pin to ANODE. This enables monitoring battery voltage using an external resistor divider connected from SW pin to GND. When AP74701Q is put in shutdown mode by pulling down the EN pin to ground, an internal switch between SW and ANODE pin is disconnected. This eliminates leakage current by the resistor divider when system is in shutdown state. When not used, "SW" pin should be left floating. ANODE EN SW VBAT_MON (ADC) CAR_VBAT

Document number: DS46952 Rev. 2 - 2 9 of 22 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. AP74701Q Detailed Description (continued) Operations The AP74701Q has shutdown, regulated conduction, full conduction, reverse current protection mode and VDS clamping mode in operation. Details are as follows. VANODE EN VCP - VANODE VANODE - VCATHODE VCP VGATE AP74701Q Mode < -39V Don’t Care Don’t Care < -39V OFF Regulated VDS Clamping Mode -39V to 0V Reverse Voltage OFF NA OFF (No Power) 0V to UVLO Forward Voltage Shutdown UVLO to 60V < VEN_IL ANODE > VEN_IH < VCP_UVLO ON VCP Charging > VCP_UVLO < -39V Regulated VDS Clamping Mode -39V to -11mV ANODE Reverse Current Protection -11mV to 50mV Regulated Regulated Conduction (Light Load) > 50mV VCP Full Conduction (Heavy Load) Shutdown Mode The AP74701Q enters shutdown mode when the EN pin voltage is below the specified input low threshold VIL_EN. Both the gate driver and the charge pump are disabled in shutdown mode. During shutdown mode the AP74701Q enters low IQ operation with the ANODE pin only sinking 1μA. When the AP7470 1Q is in shutdown mode, forward current flow through the external MOSFET is not interrupted but is conducted through the MOSFET's body diode. Regulated Conduction Mode For the AP74701Q to operate in regulated conduction mode, the gate driver must be enabled and the current from source to drain of the external MOSFET must be within the range to result in an ANODE to CATHODE voltage drop of -11mV (typ) to 50mV (typ). During forward regulation mode the ANODE to CATHODE voltage is regulated to 20 mV (typ) by adjusting the GATE to ANODE voltage. This regulation enables turn -off of the MOSFET at very light loads and ensures no DC reverse current flow. Full Conduction Mode For the AP74701Q to operate in full conduction mode, the gate driver must be enabled and the current from source to drain of the external MOSFET must be large enough to result in an ANODE to CATHODE voltage drop of greater than 50mV (typ). If these conditions are achieved the GATE pin is internally connected to the VCP pin resulting in the GATE to ANODE voltage being approximately the same as the VCP to ANODE voltage. By connecting VCP to GATE, the external MOSFET's RDS(ON) is minimized reducing the power loss of the exter nal MOSFET when forward currents are large. VDS Clamping mode The AP74701Q features an integrated V DS clamp that operates the external MOSFET as an active clamp element to dissipate automotive EMC transients such as ISO7637-2 pulse 1 transient where there is no output voltage hold-up requirement and system is allowed to turn off during such EMC transients. VDS clamp threshold is selected such that the AP74701Q does not engage into V DS clamp operation, thereby ensuring the FET remains OFF during the RCB state for the system level EMC tests where output voltage hold-up is required such as input short interruptions/micro cuts (LV124 E-10, ISO16750-2). When the ISO7637 pulse 1 is applied at the input of AP74701Q: 1. Device GATE goes low and turns OFF the MOSFET once the voltage drop across ANODE to CATHODE reaches VACTIVE_REV threshold. 2. Once the voltage across drain and source of the MOSFET reaches VCLAMP level (34V min), GATE is turned ON back in the saturation region, operating external MOSFET as an active clamp and dissipates the ISO7637 pulse 1 energy. Note that the reverse current flows from V OUT back to input during the ISO7637 pulse 1 transient event, thus discharging VOUT capacitor. The AP74701Q CATHODE pin can handle negative voltage. However, if application circuit connected to the output of AP74701Q cannot handle negative voltage, then the output filter should be designed to ensure that VOUT does not go negative during ISO7637 pulse 1 test. For all the other ISO7637 pulses (i.e. pulse 2a, 2b, 3a, 3b), which are short duration transients, the input and output filter components filtering effect suppresses these pulses.

Document number: DS46952 Rev. 2 - 2 10 of 22 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. AP74701Q Detailed Description (continued) VOUT 13.5V VBAT_IN 13.5V -(VCLAMP – VOUT) ISO7637 Pulse 1 AP74701Q ANODE GATE CATHODE VCP EN GND OFFON SW VBAT_MON VOUTVBAT_IN CIN COUT VCLAMP - + The Typical Circuit Operation of AP74701Q During VDS Clamp at ISO7637 Pulse 1 Reverse Current Protection Mode For the AP74701Q to operate in reverse current protection mode, the gate driver must be enabled and the current of the external MOSFET must be flowing from the drain to the source. When the ANODE to CATHODE voltage is less than -11mV (typ), reverse current protection mode is entered and the GATE pin is internally connected to the ANODE pin. The connection of the GATE to ANODE pin disables the external MOSFET. The body diode of the MOSFET blocks any reverse current from flowing from the drain to source.

Application Information

The AP74701Q is used with n-channel MOSFET to achieve a typical reverse-polarity protection solution. The schematic for the 12V battery protection application is shown below where the AP74701Q is used to drive n-channel MOSFET Q1 in series with a battery. The VDS clamp feature integrated into AP74701Q enables input TVS-less operation. The output capacitor COUT is recommended to protect the immediate output voltage collapse as a result of line disturbance, and to make sure output remains positive during all system EMC transient tests. AP74701Q ANODE GATE CATHODE VCP EN GND OFFON Voltage Regulator (DC/DC, LDO) Car Batt. or DC Rail SW VBAT_MON CIN 0.1uF CVCP 0.1uF 91kΩ 9.1kΩ VBAT_IN VOUT COUT 470uF Design Example Design Parameter Example Value VVBAT_IN Range 12V car battery, 12V nominal with 3.2V cold crank and 35V load dump VOUT 3.2V during cold crank to 35V load dump IOUT 3A nominal and 5A maximum COUT 1µF min, 470µF typical hold-up cap Automotive EMC Compliance ISO 7637-2 (-100V, Pulse 1, Pulse 2a, Pulse 2b), ISO 16750-2 (Suppressed load dump 35V), LV124, E-10 (Input Micro Short) 0.1µF 0.1µF 470µF

Document number: DS46952 Rev. 2 - 2 11 of 22 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. AP74701Q Application Information (continued) MOSFET Selection For selecting the blocking MOSFET Q1, important electrical parameters are the maximum continuous drain current ID, the maximum drain-to-source voltage VDS_MAX, the maximum drain-to-source voltage VGS_MAX, safe operating area (SOA), the maximum source current through body diode and the drain-to-source ON resistance RDS(ON). The maximum continuous drain current (ID) rating must exceed the maximum continuous load current. To reduce the MOSFET conduction losses, MOSFET with the lowest possible RDS(ON) is preferred, but selecting a MOSFET based on low RDS(ON) may not be beneficial always. Higher R DS(ON) will provide increased voltage information to AP74701Q's reverse current comparator at a lower reverse current. Reverse current detection is better with increased RDS(ON). Choosing a MOSFET with forward voltage drop of less than 50mV at maximum current is a good starting point. The maximum drain -to-source voltage, V DS_MAX, must be high enough to withstand the highest differential voltage seen in the application. With AP74701Q, the maximum differential voltage across the MOSFET is VCLAMP_MAX of 43V. A minimum of 60V VDS rated is recommended. This would include all the automotive transient events and any anticipated fault conditions. During the ISO7637 Pulse 1, the maximum VDS seen by the external MOSFET Q1 is VDSCLAMP_MAX that is 43V. The peak current during ISO7637- 2 pulse 1 can be calculated following equation: IISO_PEAK = (VISO + VOUT – VDSCLAMP_MAX) / RS Where

VISO is the negative peak of the ISO7637-2 pulse 1
VOUT is the initial level of the VBAT before ISO pulse is applied
VDSCLAMP is maximum VCLAMP threshold of AP74701Q
RS is the ISO7637 pulse generator input impedance (10Ω) For ISO7637-2 pulse 1 with amplitude of -100V, VOUT nominal voltage of 13.5V the peak current seen by MOSFET Q1 comes around 7A. The current profile tapers down from 7A to 0A from the peak of 7A as shown in response to ISO 7637 -2 Pulse 1. The resulting average current (IISO_AVG) can be approximated as one third of the peak current that is around 2.4A. The VDS clamp operation lasts for about 1msec (max). Selecting a MOSFET with SOA characteristics covering the load line of 43V which can support drain current greater than (I ISO_PEAK/2) for 1 msec is a good starting point. For this particular design example, MOSFET which can support greater than 3.5A of drain current at 43V VDS on SOA curve is suitable. The following curve shows typical SOA characteristics plot of Diodes Incorporated’s DMT6007LFGQ highlighting maximum drain current supported by the MOSFET for the duration of 1msec. MOSFET datasheet S OA curves are typically plotted at ambient temperature, so consider sufficient margin over MOSFET parameters calculated values to ensure safe operation over desired operating temperature range. Safe Operation Area of DMT6007LFGQ, N-CHANNEL ENHANCEMENT MODE MOSFET 43V

Document number: DS46952 Rev. 2 - 2 12 of 22 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. AP74701Q Application Information (continued) As external MOSFET dissipates ISO7637-2 pulse 1 energy, a special attention should be given while calculating maximum power dissipation and effective temperature rise. An average power dissipation across the MOSFET can be calculated by following equation: PD_AVG = VDSCLAMP_MAX × IISO_AVG For given design example, average power dissipation comes around. PD_AVG = 43V × 2.4A = 103.2W Typical ISO7637-2 pulse 1 transient lasts for 2ms with total time period of 200ms between two consecutive pulses (duty cycle of 1%). The effective temperature rise due to power dissipation across MOSFET during ISO7637-2 pulse 1 event can be calculated by looking at transient thermal impedance curve in a MOSFET datasheet. The following curve shows an example of how to estimate transient thermal impedance of a MOSFET for ISO7637-2 pulse 1 event. 0.001 Transient Thermal Resistance of DMT6007LFGQ, N-CHANNEL ENHANCEMENT MODE MOSFET The maximum VGS AP74701Q can drive is 13.9V, so a MOSFET with 15V minimum VGS rating should be selected. Charge Pump C_CP and Input Capacitance CIN Minimum required capacitance for charge pump VCP and input/output capacitance are:

CVCP: Minimum 0.1μF is required; recommended value of VCP [μF] ≥ 10 x CISS_MOSFET [μF]
CIN: Minimum 0.1μF of input capacitance is required, recommended to place close to ANODE pin Output Capacitance COUT The AP74701Q CATHODE pin is capable of handling negative voltage. However, if applications connected to AP74701Q output are not capable of handling negative voltage, then sufficient output capacitor is required to ensure output does not swing negative during ISO7637-2 pulse 1 operation. The required output capacitor during ISO7637-2 pulse 1 to ensure output does not swing negative can be calculated using following equation: COUT = (ILOAD + IISO_AVG) × 1ms / ΔVOUT (5) Where ΔVOUT is difference between VOUT at the start and the end of ISO7637-2 pulse 1.

Document number: DS46952 Rev. 2 - 2 13 of 22 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. AP74701Q Application Curves ISO 7637-2 Pulse 1 Time [4ms/ Div] Response to ISO 7637-2 Pulse 1 Time [100µs/Div] Response to ISO 7637-2 Pulse 2A Time [200ms/Div] Response to ISO 7637-2 Pulse 2B Time [100ms/Div] Response to ISO 16750-2 Pulse 5B Time [40µs/Div] Response to LV124 E10, Input micro short for 100µs ANODE 50V/div GATE 50V/div CATHODE 10V/div IIN 10A/div Anode pin is clamped around -32V Output delivers energy to load as well as back to input source during ISO7637 Pulse 1 ANODE 20V/div IIN 20A/div GATE 20V/div CATHODE 20V/div ANODE 10V/div GATE 10V/div CATHODE 10V/div IIN 10A/div Gate recovers after ISO7637-2 Pulse 2B pulse IIN 5A/div CATHODE 20V/div GATE 20V/div ANODE 20V/div Gate does not turn off during ISO7637-2 Pulse 5B (Suppressed Load Dump 35V) ANODE 10V/div GATE 10V/div CATHODE 10V/div IIN 10A/div

Document number: DS46952 Rev. 2 - 2 14 of 22 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. AP74701Q Application Curves (continued) Time [10ms/Div] Startup With 3A Load Time [10ms/Div] Startup With 6A Load Time [10ms/Div] ORing VIN1 to VIN2 Switch Over Time [10ms/Div] ORing VIN1 to VIN2 Switch Over Time [10ms/Div] ORing VIN2 to VIN1 Switch Over Time [10ms/Div] ORing VIN2 to VIN1 Switch Over IIN 5A/div CATHODE 5V/div GATE 10V/div ANODE 5V/div Gate is approximately 4V higher than Anode for 3A Load ANODE 5V/div GATE 10V/div CATHODE 5V/div IIN 5A/div VGS follows VCAP-VA at 6A load IIN1 2A/div CATHODE 5V/div GATE1 5V/div ANODE1 5V/div VOUT switches to VIN2=15V ANODE1 5V/div GATE1 5V/div CATHODE 5V/div IIN2 2A/div VOUT switches to VIN2=15V IIN1 2A/div CATHODE 5V/div GATE1 5V/div ANODE1 5V/div VOUT switches to VIN1=12V ANODE1 5V/div GATE1 5V/div CATHODE 5V/div IIN2 2A/div VOUT switches to VIN1=12V

Document number: DS46952 Rev. 2 - 2 15 of 22 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. AP74701Q Application Curves (continued) Time [10ms/Div] ORing VIN2 to VIN1 Switch Over Time [10ms/Div] ORing VIN2 to VIN1 Switch Over Time [10ms/Div] ORing - VIN2 Failure and Switch Over to VIN1 Time [20ms/Div] ORing - VIN2 Failure and Switch Over to VIN1 Shutdown Supply Current vs. Supply Voltage Operating Quiescent Current vs. Supply Voltage 0 5 10 15 20 25 30 35 40 45 50 55 60 SHUTDOWN SUPPLY CURRENT (µ A) VANODE (V) -40℃ 25℃ 85℃ 125℃ 120 160 200 240 280 320 360 400 0 5 10 15 20 25 30 35 40 45 50 55 60 QUIESCENT CURRENT (µ A) VANODE (V) -40℃ 25℃ 85℃ 125℃ IIN1 2A/div CATHODE 5V/div GATE1 5V/div ANODE1 5V/div VOUT switches to VIN1=12V ANODE1 5V/div GATE1 5V/div CATHODE 5V/div IIN2 2A/div VOUT switches to VIN1=12V IIN1 1A/div CATHODE 5V/div GATE1 5V/div ANODE1 5V/div ANODE1 5V/div ANODE2 5V/div CATHODE 5V/div IIN2 1A/div

Document number: DS46952 Rev. 2 - 2 16 of 22 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. AP74701Q Application Curves (continued) Charge Pump Current vs. Supply Voltage at VCAP = 6V Charge Pump V-I Characteristics at VANODE = 3.2V Charge Pump V-I Characteristics at VANODE > = 12V Enable Threshold vs. Temperature 100 150 200 250 300 350 3 4 5 6 7 8 9 10 11 12 CHARGE PUMP CURRENT (µ A) VANODE (V) -40℃ 25℃ 85℃ 125℃ 100 125 150 175 200 225 0 1 2 3 4 5 6 7 8 9 CHARGE PUMP CURRENT (µ A) VCAP (V) -40℃ 25℃ 85℃ 125℃ 100 150 200 250 300 350 400 450 500 0 2 4 6 8 10 12 CHARGE PUMP CURRENT (µ A) VCAP (V) -40℃ 25℃ 85℃ 125℃ 0.5 0.9 1.3 1.7 2.1 2.5 -40 0 40 80 120 160 ENABLE THRESHOLD (V) TEMPERATURE (℃) Enable Rising Threshold Enable Falling Threshold

Document number: DS46952 Rev. 2 - 2 17 of 22 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. AP74701Q Application Curves (continued) Reverse Current Blocking Delay vs. Temperature Enable to Gate Delay vs. Temperature Forward Recovery Delay vs. Temperature Charge Pump ON and OFF Threshold vs. Temperature 0.2 0.3 0.4 0.5 0.6 0.7 -40 0 40 80 120 160 REVERSE-RECOVERY DELAY (µ s) TEMPERATURE (℃) -40 0 40 80 120 160 ENABLE TO GATE TURN-ON DELAY (µ s) TEMPERATURE (℃) 1.5 1.8 2.0 2.3 2.5 2.8 3.0 -40 0 40 80 120 160 FORWARD RECOVERY DELAY (µ s) TEMPERATURE (℃) -40 0 40 80 120 160 CHARGE PUMP ON/OFF THRESHOLD (V) TEMPERATURE (℃) VCAP ON VCAP OFF

Document number: DS46952 Rev. 2 - 2 18 of 22 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. AP74701Q Application Curves (continued) Charge Pump UVLO Threshold vs. Temperature VDSCLAMP Threshold vs. Temperature VANODE POR Threshold vs. Temperature Gate Current vs. Forward Voltage Drop 4.5 5.5 6.5 -40 0 40 80 120 160 CHARGE PUMP UVLO THRESHOLD (V) TEMPERATURE (℃) VCP_UVLOR VCP_UVLOF -50 -25 0 25 50 75 100 125 150 VDSCLAMP THRESHOLD (V) TEMPERATURE (℃) 2.4 2.6 2.8 3.2 3.4 -40 0 40 80 120 160 ANODE POR THRESHOLD (V) TEMPERATURE (℃) VANODE PORR VANODE PORF -100 -80 -60 -40 -20 100 -20 -10 0 10 20 30 40 50 60 IGATE (µ A) VANODE - VCATHODE (mV) IGATE

Ordering Information

7 : Tape & ReelTA8 Q : Automotive Grade Orderable Part Number Enable Active Package Code Package Packing Qty. Carrier AP74701QTA8-7 High TA8 SOT28 3000 7” Tape and Reel Marking Information SOT28 (Top View) XXX : Identification Code W : Week : A to Z : 1 to 26 week; X : Internal Code Y : Year 0 to 9 a to z : 27 to 52 week; z represents 52 and 53 week XXX Y W X 1 4 8 5 Orderable Part Number Package Identification Code AP74701QTA8-7 SOT28 T9Q TA8: SOT28 7: 7” Tape & Reel

Document number: DS46952 Rev. 2 - 2 20 of 22 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. AP74701Q Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT28 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT28 Note: The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary depending on appl ication. These dimensions may be modified based on user equipment capability or fabrication criteria. A more robust pattern may be desired for wave soldering and is calculated by adding 0.2 mm to the ‘Z’ dimension. For further information, please reference document IPC -7351A, Naming Convention for Standard SMT Land Patterns, and for International grid details, please see document IEC, Publication 97. Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and c learance distances between device Terminals and PCB tracking. SOT28 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.10 -- A2 -- -- 0.95 b 0.20 0.40 0.30 c 0.08 0.20 -- D 2.85 2.95 2.90 E 2.65 2.95 2.80 E1 1.55 1.65 1.60 e 0.65 BSC e1 1.95 BSC L 0.30 0.60 0.45 L1 0.60 REF L2 0.25 BSC θ 0° 8° -- θ1 9° 11° 10° aaa 0.15 bbb 0.25 ccc 0.10 ddd 0.20 All Dimensions in mm Dimensions Value (in mm) C 0.950 G 1.600 X 0.700 Y 0.900 Y1 3.400 c 01 (4x) 01(4x) View C D E e aaa C bbb C aaa C D ddd C A-B D b (8x) See View C A A2 Seating Plane C C Seating Plane ccc C

0 L2L1

L Gauge Plane D PIN 1 X Y C

Document number: DS46952 Rev. 2 - 2 21 of 22 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. AP74701Q Device Taping Orientation Tape Width Part Number Suffix Tape Orientation 8mm -7 Note: For part marking, refer to Marking Information. Note: Tape and package drawings are not to scale and are shown for device tape orientation only. Note: The taping orientation of the other package type can be found on our website at https://www.diodes.com/assets/Packaging-Support-Docs/AP02007.pdf. Mechanical Data

Surface-Mount Package
Moisture Sensitivity: Level 1 per J-STD-020
Package Material: Molded Plastic, UL Flammability Classification Rating 94V-0
Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208
Weight: 0.016 grams (Approximate)
Max Soldering Temperature +260°C for 30 secs as per JEDEC J-STD-020 Direction of feed

Document number: DS46952 Rev. 2 - 2 22 of 22 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. AP74701Q IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICUL AR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incor porate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional - safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality co ntrol techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign t rademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 5. Diodes’ products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 6. Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sa le is prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contravention of a ny applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any da mages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may c ontain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this do cument is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion her eof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 9. This Notice may be periodically updated with the most recent version available at https://www.diodes.com/about/company/terms-and- conditions/important-notice The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries. All other trademarks are the property of their respective owners. © 2025 Diodes Incorporated. All Rights Reserved. www.diodes.com

Summary

Ideal Diode Controller with VDS Clamp Removes the Need for External TVS in Automotive RVP Circuits August 2025

Description

Ideal Diode Controller with VDS Clamp Removes the Need for External TVS in Automotive RVP Circuits August 2025

Source title AP74701Q_V01 Datasheet(PDF) - Diodes Incorporated

AP74701Q

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AP74701Q

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0 L2L1

AP74701Q specifications and overview.

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