AP640R1-00 ALPHA | Alldatasheet

Document overview

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Technical content

Features

I Low Loss, < 1.3 dB I High Isolation, > 37 dB I Excellent Return Loss, < -13 dB I Fast Switching Speed, 4 ns I High Power Handling, 37 dBm Peak, 33 dBm CW

Description

Alpha’s high isolation, single pole, single throw PIN diode switch is a robust, high performance switch. It is ideal for low loss, high isolation applications, particularly where broad bandwidths and high power handling is required. The chip uses Alpha’s proven PIN diode technology, and is based upon MBE layers for the highest uniformity and repeatability. The diodes employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process. The GaAs MMIC employs two shunt PIN diodes and an on-chip bias network. Chips are measured on a 100% basis at 24, 28, 31 and 35 GHz for insertion loss, isolation, input and output return losses, and also at DC for diode breakdown voltage and turn on voltage. Dimensions indicated in mm. All pads are ≥ 0.07 mm wide. Chip thickness = 0.1 mm. Chip Outline Parameter Symbol Condition Min. Typ. 2 Max. Unit Insertion Loss IL F = 18, 21, 24, 28, 31, 35 GHz 1.0 1.3 dB F = 38, 40 GHz 1.3 1.9 dB Isolation ISO F = 18, 21, 24, 28, 31, 35 GHz 37 42 dB F = 38, 40 GHz 33 36 dB Input Return Loss (Insertion State) RL I F = 18, 21 GHz 14 12 dB F = 24, 28, 31, 35, 38, 40 GHz 24 15 dB Output Return Loss (Insertion State) RL O F = 18, 21 GHz 14 12 dB F = 24, 28, 31, 35, 38, 40 GHz 22 13 dB Leakage Current I DD V = -50 V 2 20 µA Switching Speed1 4n s Output Power at 1 dB Compression1 P1 dB F = 35 GHz 33 dBm Electrical Specifications at 25°C 0.000 0.000 1.225 0.670 0.313 0.585 0.877 0.070 1.150 Absolute Maximum Ratings Characteristic Value Operating Temperature -55 °C to +125°C Storage Temperature -65 °C to +150°C DC Reverse Bias -70 V (-20 mA) DC Forward Bias +1.3 V (100 mA) PIN 10 W AP640R1-00 1. Not measured on a 100% basis. 2. Typical represents the median parameter value across the specified frequency range for the median chip.

18–40 GHz GaAs MMIC High Isolation SPST Reflective PIN Switch AP640R1-00 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com Specifications subject to change without notice. 3/00A Performance vs. Frequency Bias Conditions: IF = 20 mA, VR = -3.5 V -50 -30 -40 -20 -10 15 20 25 30 35 40 Frequency (GHz) Return Loss & Isolation (dB) Insertion Loss (dB) Input Return Loss Output Return Loss Insertion Loss Isolation -50 -40 -30 -20 -10 Return Loss & Isolation (dB) 0.0 0.3 0.6 0.9 1.2 1.5 Forward Voltage (V) Performance vs. DC Bias F = 28 GHz Forward Current (mA) 0 1 2 5 10 20 40 Input/Output Return Loss Isolation Forward Voltage J1 J2 RESISTOR -30 -20 -10 Return Loss (dB) Insertion Loss (dB) Performance vs. DC Bias F = 28 GHz Reverse Bias Voltage (V) Output Return Loss Input Return Loss Insertion Loss Typical Performance Data Bias Arrangement Circuit Schematic B1 J1–J2 +20 mA Isolation -5 V Insertion Loss Truth Table