1N816 ETC | Alldatasheet

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DO-35 Case . DO-35 Case namie oF Bett se —a a Impedance Goeticient rn et nf zre@t Tt a NN A A NO 7, OY A oo oa Neie “704 035 1 — 888. $20-sh— 139 ale 80 ‘AP3898 2.000 "100 20 ‘023 o a“ ers ‘AP4829 1900 1095 400 = Btozrovr | *°9G" | ‘cas % 23 i ili 0: é x ‘ _Stabistors are diffused silicon diodes | B710>/1v4 | 11400 070 20 003 with controlled forward voltage charac- | Bz102/2Vi} 2.100 105 30 1023 teristics. They are offered with reference | B2102/2ve | _ 2.800 140 40 023 .560V to 7. BZi0873V4 | 3.450 Bt 6 30 0 voltage 8 from 0.560V to 7.800V in BZX75C1V4} 1.400 ‘070 10 10 033 packages. BZX75C2V1| 2.100 2105 10 10 15 050 All stabistor diodes are manufactured | 82X75C2V8| 2.800 1140 10 20 088 in double plug packages with silicon B2X75C3V6|_3.600 -180 10 25 082. dice fused to the ends of the plug. This giz8 360 28 - technique results in diodes with stable | st22 "640 1032 031 forward reference characteristics. $123 600 030 033 Applications may be found in a broad |_§7S7 830 042 = range of circuits where stable forward S138 1.650 083 400 teference sources are required, suchas | $139 Ae 18 % voltage regulation, sensing, comparing, | STB-1 650 033" 10 protecting, and in computer circuitry. STB-2 1.300 065 10 sTB-4 2.600 130 = STB-567 4.460 146° - STB-568 2.200 i110 = STB-569 144 - AP2361 “068 = *10% - DO-35 Case 7 DO-35 Case f Maximum Typical | [vn ne YR | eta (BE | te | te | 4 Fe @ tov ret Pt. er ma epee mw ‘APD200 1.220-1.340 f 1:390-1.540 i 1,600-1.760 APD300 4.840-2.030 ie 2:100-2.330 i 2:400-2,650 A APD400 2,470-2.710 1 4 2:800-3.070 10 " 3.160-3.490 100 {a 1.210-1.410 i 4,380-1.580 10 . 1.540-1:840 . 4.850-2.050 . 2.120-2.320 10¢ ‘ . 2'360-2.660 ‘P5179 2,100-2.800 2'600-3.100 Z 3,000-3.700 *@ 30V is 18mv -