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Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 19
Technical content
Features
Single channel current-limited power switch Output discharge function Fast short-circuit response time: 2µs 3.7A accurate current limiting (typ) Reverse current blocking 70mΩ on-resistance (typ) Input voltage range: 2.7V – 5.5V Built-in soft-start with 0.6ms typical rise time Overcurrent and thermal protection Fault report (FLG) with blanking time (7ms typ) ESD protection: 2KV HBM, 200V MM Active low (AP2501A) or active high (AP2511A) enable Ambient temperature range: -40°C to +85°C SO-8, MSOP-8, MSOP-8EP, U-DFN3030-8 and U-DFN2020-6: Available in “Green” Molding Compound (No Br, Sb) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) UL Recognized, File Number E322375 IEC60950-1 CB Scheme Certified Moisture Sensitivity: Level 1 per J-STD-020 Pin Assignments FLG OUT OUT NCGND IN IN EN (Top View) U-DFN3030-8 Type E (Top View) (SO-8) NC OUT OUT FLG IN IN GND EN (Top View) U-DFN2020-6 FLG OUT OUT NCGND IN IN EN (Top View) MSOP-8/MSOP-8EP Note: Latter with exposed pad (dotted line)
Applications
LCD TVs & Monitors Set-Top-Boxes, Residential Gateways Laptops, Desktops, Servers, E-Readers Printers, Docking Stations, HUBs Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All a pplicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Green
Document number: DS37745 Rev. 4 - 2 2 of 19 www.diodes.com November 2015 © Diodes Incorporated AP2501A/AP2511A Typical Applications Circuit 0.1uF IN GNDEN OUT ON 120uF Power Supply 2.7V to 5.5V 0.1uF OFF FLG Load 10k Enable Active High (AP2511A) Available Options Part Number Channel Enable Pin (EN) Recommended Maximum Continuous Load Current (A) Typical Current Limit (A) Package AP2501A 1 Active Low 2.5A 3.7A SO-8 MSOP-8 MSOP-8EP U-DFN3030-8 U-DFN2020-6 AP2511A 1 Active High Pin Descriptions Pin Name Pin Number Function MSOP-8EP, U-DFN3030-8 SO-8, MSOP-8 U-DFN2020-6 GND 1 1 2 Ground IN 2, 3 2, 3 1 Voltage Input Pin. Connect a 0.1µF or larger ceramic capacitor from IN to GND as close as possible. (all IN pins must be tied together externally) EN 4 4 3 Enable Input. Active low (AP2501A) or active high (AP2511A). FLG 5 5 4 Over-temperature and over-current fault reporting with 7ms deglitch; active low open-drain output. FLG is disabled for 7ms after turn-on. OUT 6, 7 6, 7 5 Voltage Output Pin (all OUT pins must be tied together externally) NC 8 8 6 No internal connection; recommend tie to OUT pins. Exposed Pad Exposed Pad Not applicable Exposed Pad Exposed pad. It should be externally connected to GND and thermal mass for enhanced thermal impedance. It should not be used as electrical ground conduction path.
Document number: DS37745 Rev. 4 - 2 3 of 19 www.diodes.com November 2015 © Diodes Incorporated AP2501A/AP2511A Functional Block Diagram Thermal Sense FLG OUT GND IN EN UVLO Current Limit Current Sense Deglitch Discharge Control Driver Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Parameter Rating Unit ESD HBM Human Body Model ESD Protection 2 KV ESD MM Machine Model ESD Protection 200 V VIN Input Voltage (Note 4) -0.3 to +6.5 V VOUT Output Voltage (Note 4) -0.3 to VIN +0.3 or 6.5 V VEN , VFLG Enable Voltage (Note 4) -0.3 to VIN +0.3 0r 6.5 V ILOAD Maximum Continuous Load Current Internal Limited A TJMAX Maximum Junction Temperature +150 °C TST Storage Temperature Range (Note 5) -65 to +150 °C 5. UL Recognized Rating from -30°C to +70°C (Diodes qualified TST from -65°C to +150°C). Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are str ess ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. Semiconductor devices are ESD sensitive and may be d amaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Symbol Parameter Min Max Unit VIN Input Voltage 2.7 5.5 V IOUT Output Current 0 2.5 A VIH High-Level Input Voltage on EN 2.0 VIN V VIL Low-Level Input Voltage on EN 0 0.8 V TA Operating Ambient Temperature (Note 6) -40 +85 °C Note: 6. TA(MAX) = +70°C if VIN ≤ 4.1V and IOUT = 2.5A to keep device from going into thermal protection.
Document number: DS37745 Rev. 4 - 2 4 of 19 www.diodes.com November 2015 © Diodes Incorporated AP2501A/AP2511A Electrical Characteristics (@ TA = +25°C, VIN = +5.0V, CIN = 0.1µF, CL = 1µF, unless otherwise specified.) Symbol Parameter Conditions (Note 7) Min Typ Max Unit VUVLO Input UVLO VIN rising 1.6 2.0 2.4 V ΔVUVLO Input UVLO Hysteresis VIN decreasing - 50 mV ISHDN Input Shutdown Current Disabled, OUT = open - 0.1 1.0 µA IQ Input Quiescent Current Enabled, OUT = open - 60 100 µA ILEAK Input Leakage Current Disabled, OUT grounded - 0.1 1.0 µA IREV Reverse Leakage Current Disabled, VIN = 0V, VOUT = 5V, IREV at VIN - 0.01 1.00 µA RDS(ON) Switch on-Resistance VIN = 5V, IOUT = 1A TA = 25oC - 70 78 VIN = 3.3V, IOUT = 1A TA = 25°C - 90 108 ILIMIT Overload Current Limit (Note 7) VIN = 5V, VOUT = 4.5V -40°C≤ TA ≤ +85°C 2.8 3.7 4.6 A ITRIG Current Limiting Trigger Threshold Output Current Slew rate (<100A/s) - 3.7 - A ISHORT Short-Circuit Current Limit Enabled into short circuit - 3.7 - A TSHORT Short-Circuit Response Time VOUT = 0V to IOUT = ILIMIT (OUT shorted to ground) - 2 - µs VIL EN Input Logic Low Voltage VIN = 2.7V to 5.5V - - 0.8 V VIH EN Input Logic High Voltage VIN = 2.7V to 5.5V 2 - - V ILEAK-EN EN Input Leakage VIN = 5V, VEN = 0V and 5.5V - 0.01 1.00 µA ILEAK-O Output Leakage Current Disabled, VOUT = 0V - 0.5 1 µA TD(ON) Output turn-on Delay Time CL = 1µF, RLOAD = 5Ω - 0.1 - ms TR Output turn-on Rise Time CL = 1µF, RLOAD = 5Ω - 0.6 1.5 ms TD(OFF) Output turn-off Delay Time CL = 1µF, RLOAD = 5Ω - 0.1 ms TF Output turn-off Fall Time CL = 1µF, RLOAD = 5Ω - 0.05 0.10 ms RFLG FLG output FET on-Resistance IFLG = 10mA - 20 40 Ω IFOH FLG Off Current VFLG = 5V - 0.01 1.00 µA TBLANK FLG Blanking Time Assertion or deassertion due to overcurrent and over-temperature condition 4 7 15 ms TDIS Discharge Time CL= 1µF, VIN = 5V, disabled to VOUT < 0.5V - 0.6 - ms RDIS Discharge Resistance (Note 8) VIN = 5V, disabled, IOUT = 1mA - 105 - Ω TSHDN Thermal Shutdown Threshold Enabled - +140 - °C THYS Thermal Shutdown Hysteresis - - +20 - °C θJA Thermal Resistance Junction-to- Ambient SO-8 (Note 9) - 96 - °C/W MSOP-8 (Note 9) - 130 - °C/W MSOP-8EP (Note 10) - 92 - °C/W U-DFN3030-8 (Note 10) - 84 - °C/W U-DFN2020-6 (Note 11) - 90 - °C/W Notes: 7. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects mu st be taken into account separately. 8. The discharge function is active when the device is disabled (when enable is de -asserted or during power-up power-down when VIN < VUVLO). The discharge function offers a resistive discharge path for the external storage capacitor for limited time. 9. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout. 10. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground plane. 11. Device mounted on 1" x 1" FR-4 substrate PCB, 2oz copper, with minimum recommended padon top layer and thermal vias to bottom layer ground plane.
Document number: DS37745 Rev. 4 - 2 5 of 19 www.diodes.com November 2015 © Diodes Incorporated AP2501A/AP2511A Typical Performance Characteristics VEN 90% VOUT TD(ON) 10% TD(OFF) 50% 50% TR 10% 90% TF VEN 90% VOUT TD(ON) 10% TD(OFF) 50% 50% TR 10% 90% TF Figure 1 Voltage Waveforms: AP2501A (left), AP2511A (right) All Enable Plots are for Enable Active Low Turn-Off Delay and Fall Time TA=25°C Vin=5V CL=120uF Rout=2.5Ω Vout 2V/div Ven 5V/div Iin 1A/div Device Disable Turn-On Delay and Rise Time TA=25°C Vin=5V CL=120uF Rout=2.5Ω Vout 2V/div Ven 5V/div Iin 1A/div Device Enable Turn-Off Delay and Fall Time TA=25°C Vin=5V CL=1uF Rout=2.5Ω Vout 2V/div Ven 5V/div Iin 1A/div Device Disable Turn-On Delay and Rise Time TA=25°C Vin=5V CL=1uF Rout=2.5Ω Vout 2V/div Ven 5V/div Iin 1A/div Device Enable
Document number: DS37745 Rev. 4 - 2 6 of 19 www.diodes.com November 2015 © Diodes Incorporated AP2501A/AP2511A Typical Performance Characteristics (continued) Vout 2V/div Short-Circuit to No-Load Recovery Response Iin 2A/div FLG 5V/div TA=25°C Vin=5V Output Short Circuit Removed Short Circuit Present Device Thermal Cycles TA=25°C Vin=5V Vout 2V/div FLG 5V/div Iin 2A/div No-Load to Short-Circuit Transient Response Output Short Circuit Device Enable Current-Limit Vout 2V/div Short-Circuit to Full-Load Recovery Response Iin 2A/div FLG 5V/div TA=25°C Vin=5V Rout=2Ω Output Short Circuit Removed Short Circuit Present Device Thermal Cycles TA=25°C Vin=5V Rout=2Ω Vout 2V/div FLG 5V/div Iin 2A/div Full-Load to Short-Circuit Transient Response Output Short Circuit Device Turns off and Re-enables Into Current-Limit Inrush Current TA=25°C Vin=5V CL=120uF,220uF,470uF Rout=2.5Ω Ven 5V/div Iin 1A/div CL=120uF CL=220uF CL=470uF Device Enabled Into Short-Circuit TA=25°C Vin=5V CL=120uF Rout=1Ω Ven 5V/div Iin 1A/div
Document number: DS37745 Rev. 4 - 2 7 of 19 www.diodes.com November 2015 © Diodes Incorporated AP2501A/AP2511A Typical Performance Characteristics (cont.) Vin 2V/div UVLO Decreasing TA=25°C Vin=5V Rout=33Ω CL=120uF Vout 2A/div Vout 2V/div Vin 2A/div UVLO Increasing TA=25°C Vin=5V Rout=33Ω CL=120uF Vout 5V/div Short-Circuit with Blanking Time and Recovery Iout 2A/div FLG 5V/div TA=25°C Vin=5V TA=25°C Vin=5V Rout=2.5Ω CL=120uF Vout 5V/div FLG 5V/div Iout 1A/div Power ON Vin 5V/div
Document number: DS37745 Rev. 4 - 2 8 of 19 www.diodes.com November 2015 © Diodes Incorporated AP2501A/AP2511A Typical Performance Characteristics (cont.) INPUT VOLTAGE (V) Turn-Off Time vs. Input Voltage TURN-OFF TIME (µs) 180 200 160 140 120 100 C = 1µF R = 5 T = 25°C L L A INPUT VOLTAGE (V) Rise Time vs. Input Voltage TURN-ON TIME (µs) 900 1000 800 700 600 500 400 300 200 100 C = 1µF R = 5 T = 25°C L L A INPUT VOLTAGE (V) Rise Time vs. Input Voltage FALL TIME (µs) 100 C = 1µF R = 5 T = 25°C L L A TEMPERATURE ( C) Supply Current, Output Enabled vs. Temperature -50 -25 0 25 50 75 100 1250 100 V = 5VIN V = 5.5VIN V =3.3VIN V = 2.7VIN SUPPLY CURRENT OUTPUT ENABLED (µA) TEMPERATURE ( C) Supply Current, Output Disabled vs. Temperature -50 -25 0 25 50 75 100 125 SUPPLY CURRENT OUTPUT DISABLED (µA) -0.15 -0.10 -0.05 0.00 0.05 0.10 0.15 0.20 0.25 0.30 -0.20 -0.25 -0.30 V = 5VIN V = 5.5VIN V =3.3VINV = 2.7VIN INPUT VOLTAGE (V) Turn-On Time vs. Input Voltage 130 140 150 100 110 120TURN-ON TIME (µs) C = 1µF R = 5 T = 25°C L L A
Document number: DS37745 Rev. 4 - 2 9 of 19 www.diodes.com November 2015 © Diodes Incorporated AP2501A/AP2511A Typical Performance Characteristics (cont.) TEMPERATURE ( C) R vs. Temperature DS(ON) -50 -25 0 25 50 75 100 125 V = 5VIN V = 5.5VIN V =3.3VIN V = 2.7VIN R (m )DS(ON) 180 170 160 150 140 130 120 110 100 TEMPERATURE ( C) Short-Circuit Output Current vs. Temperature -50 -25 0 25 50 75 100 125 V = 5VIN V = 5.5VIN V =3.3VIN V = 2.7VIN SHORT-CIRCUIT OUTPUT CURRENT(A) 4.5 4.4 4.3 4.2 4.1 4.0 3.9 3.5 3.4 3.2 3.1 3.0 3.8 3.7 3.6 TEMPERATURE ( C) Undervoltage Lockout vs. Temperature -50 -25 0 25 50 75 100 125 UVLO Rising UVLO Falling UNDERVOLTAGE LOCKOUT (V) 2.2 2.1 2.0 1.9 1.8 1.7 1.6 INPUT VOLTAGE (V) Threshold Trip Current vs. Input Voltage THRESHOLD TRIP CURRENT(A) 4.5 4.4 4.3 4.2 4.1 3.8 3.7 3.6 3.5 4.0 3.9 C = 120µF T = 25°C L A
Document number: DS37745 Rev. 4 - 2 10 of 19 www.diodes.com November 2015 © Diodes Incorporated AP2501A/AP2511A Application Note Power Supply Considerations A 0.1μF to 2.2μF X7R or X5R ceramic bypass capacitor placed between IN and GND, close to the device, is recommended. When an external power supply is used, or an additional ferrite bead is added t o the input, high inrush current may cause voltage spikes higher than the device maximum input rating during short circuit condition. In this case a 2.2μF or bigger capacitor is recommended. Placing a high -value electrolytic capacitor on the input and output pin(s) is recommended when the output load is heavy. This precaution reduces power-supply transients that may cause ringing on the input. Additionally, bypassing the output with a 0.1μF to 1.0μF ceramic capacitor improves the immunity of the device to short circuit transients. Overcurrent and Short Circuit Protection An internal sensing FET is employed to check for overcurrent conditions. Unlike current-sense resistors, sense FETs do not increase the series resistance of the current path. When an over current condition is detected, the device maintains a cons tant output current and reduces the output voltage accordingly. Complete shutdown occurs only if the fault stays long enough to activate thermal limiting. Three possible overload conditions can occur. In the first condition, the output has been shorted to GND before the device is enabled or before VIN has been applied. The AP 2501A/AP2511A senses the short circuit and immediately clamps output current to a certain safe level namely ISHORT. In the second condition, an output short or an overl oad occurs while the device is enabled. At the instance the overload occurs, higher inrush current may flow for a very short period of time before the current limit function can react. The input capacitor(s) rapidly discharge through the device, activating current limit circuitry. Protection is achieved by momentarily opening the P-MOS high-side power switch and then gradually turning it on. After the current limit function has tripped (reached the over current trip threshold), the device switches i nto current limiting mode and the current is clamped at ILIMIT. In the third condition, the load has been gradually increased beyond the recommended operating current. The current is permit ted to rise until the current-limit threshold (ITRIG) is reached or until the thermal limit of the device is exceeded. The AP2501A/AP2511A is capable of delivering current up to the current-limit threshold without damaging the device. Once the threshold has been reached, the device switches into its current limiting mode and is set at ILIMIT. FLG Response When an overcurrent or over-temperature shutdown condition is encountered, the FLG open-drain output goes active low after a nominal 7 -ms deglitch timeout. The FLG output remains low until both overcurrent and over-temperature conditions are removed. Connecting a heavy capacitive load to the output of the device can cause a momentary overcurrent condition, which does not trigger the FLG due to the 7 -ms deglitch timeout. The AP 2501A/AP2511A is designed to eliminate false over current reporting without the need of external components to remove unwanted pulses. Power Dissipation and Junction Temperature The low on-resistance of the internal MOSFET allows the small surface -mount packages to pass large current. Using the maximum operating ambient temperature (TA) and RDS(ON), the power dissipation can be calculated by: PD = RDS(ON) × I2 Finally, calculate the junction temperature: TJ = PD x RJA + TA Where: TA = Ambient temperature °C RJA = Thermal resistance PD = Total power dissipation Thermal Protection Thermal protection prevents the IC from damage when heavy -overload or short -circuit faults are present for extended periods of time. The AP2501A/AP2511A implements a thermal sensing to monitor the operating junction temperature of the power distribution switch. Once the die temperature rises to approximately 140°C due to excessive power dissipation in an over current or short -circuit condition the internal thermal sense circuitry turns the power switch off, thus preventing the power switch from damage. Hysteresis is built into the thermal sens e circuit allowing the device to cool down approximately 20°C before the switch turns back on. The switch continues to cycle in this manner until the load fault or input power is removed. The FLG open -drain output is asserted when an over -temperature shutdown or over current occurs with 7 -ms deglitch.
Document number: DS37745 Rev. 4 - 2 11 of 19 www.diodes.com November 2015 © Diodes Incorporated AP2501A/AP2511A Application Note (continued) Undervoltage Lockout (UVLO) Undervoltage lockout f unction (UVLO) keeps the internal power switch from being turned on until the power supply has reached at least 2V, even if the switch is enabled. Whenever the input voltage falls below approximately 2V, the power switch is quickly turned off. This facilitates the design of hot-insertion systems where it is not possible to turn off the power switch before input power is removed. Discharge Function The discharge function of the device is active when enable is disabled or de -asserted. The discharge function with the N -MOS power switch implementation is activated and offers a resistive discharge path for the external storage capacitor. This is designed for discharging any residue of the output voltage when either no external output resistance or load resistance is present at the output. Dual-Purpose Port Applications AP2501A/AP2511A requires special consideration for use in dual-purpose port applications in which a single port is used for data communication between the host and peripheral devices while simul taneously maintaining a charge to the battery of the peripheral device. An example of such application is a shared HDMI/MHL (Mobile High -definition Link) port that allows streaming video between an HDTV or set -top box and a smartphone or tablet while maint aining a charge to the smartphone or tablet battery. Since the AP2501A/AP2511A includes an embedded discharge feature that discharges the output load of the device when the device is disabled, the batteries of the connected p eripheral device will be subject to continual discharge whenever the AP2501A/AP2511A is disabled. An overstress condition to the device's discharge MOS transistor may result. In addition, if the output of the AP2501A/AP2511A is subjected to a constant voltage that would be present during a dual-purpose port application such as MHL, an overstress condition to the device may result.
Document number: DS37745 Rev. 4 - 2 12 of 19 www.diodes.com November 2015 © Diodes Incorporated AP2501A/AP2511A
Ordering Information
0 : Active Low 1 : Active High 7 : 7" Tape & Reel 13 : 13" Tape & Reel 1 : 1 Channel Channel PackageEnable Packing S : SO-8 M8 : MSOP-8 MP : MSOP-8EP FGE : U-DFN3030-8 Part Number Package Code Packaging 7”/13” Tape and Reel Quantity Part Number Suffix AP25X1AS-13 S SO-8 2,500/Tape & Reel -13 AP25X1AM8-13 M8 MSOP-8 2,500/Tape & Reel -13 AP25X1AMP-13 MP MSOP-8EP 2,500/Tape & Reel -13 AP25X1AFGE-7 FGE U-DFN3030-8 3,000/Tape & Reel -7 AP25X1ASN-7 SN U-DFN2020-6 3,000/Tape & Reel -7 Marking Information (1) SO-8 AP25X 1 ( Top view ) YY WW XX Part Number Logo WW : Week : 01~52; 52 YY : Year : 08, 09,10~ 8 7 6 5 1 2 3 4 0 : Active Low 1 : Active High represents 52 and 53 week A X : Internal Code (2) MSOP-8 AP25X1A ( Top view ) Y W X Part Number Logo Y : Year : 0~9 8 7 6 5 1 2 3 4 0 : Active Low 1 : Active High X : Internal Code a~z : 27~52 week; z represents W : Week : A~Z : 1~26 week; 52 and 53 week
Document number: DS37745 Rev. 4 - 2 13 of 19 www.diodes.com November 2015 © Diodes Incorporated AP2501A/AP2511A Marking Information (continued) (3) MSOP-8EP AP25X1A ( Top view ) Y W X E Part Number Logo Y : Year : 0~9 8 7 6 5 1 2 3 4 0 : Active Low 1 : Active High X : Internal Code a~z : 27~52 week; z represents W : Week : A~Z : 1~26 week; 52 and 53 week MSOP-8EP (4) U-DFN3030-8 XX : Identification Code ( Top View ) X : A~Z : Internal Code XY X X W Y : Year : 0~9 W : Week : A~Z : 1~26 week; a~z : 27~52 week; z represents 52 and 53 week Part Number Package Identification Code AP2501AFGE-7 U-DFN3030-8 5W AP2511AFGE-7 U-DFN3030-8 5X (5) U-DFN2020-6 XX : Identification Code ( Top View ) X : A~Z : Internal Code XY X X W Y : Year : 0~9 W : Week : A~Z : 1~26 week; a~z : 27~52 week; z represents 52 and 53 week Part Number Package Identification Code AP2501ASN-7 U-DFN2020-6 5Y AP2511ASN-7 U-DFN2020-6 5Z
Document number: DS37745 Rev. 4 - 2 14 of 19 www.diodes.com November 2015 © Diodes Incorporated AP2501A/AP2511A Package Outline Dimensions (All dimensions in mm.) Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 1. Package type: SO-8 2. Package type: MSOP-8 SO-8 Dim Min Max A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h - 0.35 L 0.62 0.82 0 8 All Dimensions in mm MSOP-8 Dim Min Max Typ A - 1.10 - A1 0.05 0.15 0.10 A2 0.75 0.95 0.86 A3 0.29 0.49 0.39 b 0.22 0.38 0.30 c 0.08 0.23 0.15 D 2.90 3.10 3.00 E 4.70 5.10 4.90 E1 2.90 3.10 3.00 E3 2.85 3.05 2.95 e - - 0.65 L 0.40 0.80 0.60 a 0° 8° 4° x - - 0.750 y - - 0.750 All Dimensions in mm Gauge Plane Seating Plane Detail ‘A’ Detail ‘A’ EE1 h L D e b A 45° 7°~9° 0.254 A e Seating Plane Gauge Plane L See Detail C Detail C c a E y x D b 0.25 4x10° 4x10°
Document number: DS37745 Rev. 4 - 2 15 of 19 www.diodes.com November 2015 © Diodes Incorporated AP2501A/AP2511A Package Outline Dimensions (continued) (All dimensions in mm.) Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 3. Package type: MSOP-8EP 4. Package type: U-DFN3030-8 Type E 5. Package type: U-DFN2020-6 MSOP-8EP Dim Min Max Typ A - 1.10 - A1 0.05 0.15 0.10 A2 0.75 0.95 0.86 A3 0.29 0.49 0.39 b 0.22 0.38 0.30 c 0.08 0.23 0.15 D 2.90 3.10 3.00 D1 1.60 2.00 1.80 E 4.70 5.10 4.90 E1 2.90 3.10 3.00 E2 1.30 1.70 1.50 E3 2.85 3.05 2.95 e - - 0.65 L 0.40 0.80 0.60 a 0° 8° 4° x - - 0.750 y - - 0.750 All Dimensions in mm U-DFN3030-8 Type E Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 0.15 b 0.20 0.30 0.25 D 2.95 3.05 3.00 D2 2.15 2.35 2.25 E 2.95 3.05 3.00 e 0.65 E2 1.40 1.60 1.50 L 0.30 0.60 0.45 Z 0.40 All Dimensions in mm U-DFN2020-6 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 0.15 b 0.20 0.30 0.25 D 1.95 2.075 2.00 D2 1.45 1.65 1.55 e 0.65 E 1.95 2.075 2.00 E2 0.76 0.96 0.86 L 0.30 0.40 0.35 All Dimensions in mm b (x8)e L (x8) Z (x4) D E2E A D A E e y x Seating Plane Gauge Plane L D 8Xb See Detail C Detail C c a 4X10° 4X10° 0.25D1 D E e b L A D2/2 E2/2 R0.100 Seating Plane Pin #1 ID
Document number: DS37745 Rev. 4 - 2 16 of 19 www.diodes.com November 2015 © Diodes Incorporated AP2501A/AP2511A Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. (1) Package type: SO-8 (2) Package type: MSOP-8 (3) Package type: MSOP-8EP Dimensions Value (in mm) X 0.60 Y 1.55 C1 5.4 C2 1.27 Dimensions Value (in mm) C 0.650 X 0.450 Y 1.350 Y1 5.300 Dimensions Value (in mm) C 0.650 G 0.450 X 0.450 X1 2.000 Y 1.350 Y1 1.700 Y2 5.300 X C Y X Y G X C Y Y2 Y1
Document number: DS37745 Rev. 4 - 2 17 of 19 www.diodes.com November 2015 © Diodes Incorporated AP2501A/AP2511A Suggested Pad Layout (continued) Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. (4) Package type: U-DFN3030-8 Type E (5) Package type: U-DFN2020-6 Y G G C X X Dimensions Value (in mm) C 0.65 C1 2.35 X 0.30 Y 0.65 Y1 1.60 Y2 2.75 Dimensions Value (in mm) C 0.65 G 0.15 X 0.37 X1 1.67 Y 0.45 Y1 0.90 Y (x8) X (x8) C Y1 Y2
Document number: DS37745 Rev. 4 - 2 18 of 19 www.diodes.com November 2015 © Diodes Incorporated AP2501A/AP2511A Taping Orientation (Note 12) For U-DFN2020-6 and U-DFN3030-8 Type E
Document number: DS37745 Rev. 4 - 2 19 of 19 www.diodes.com November 2015 © Diodes Incorporated AP2501A/AP2511A IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANT Y OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described h erein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated p roducts for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provi ded in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com