AP2401A DIODES | Alldatasheet

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 18

Technical content

Features

  • Single Channel Current-Limited Power Switch
  • Output Discharge Function
  • Output Current Latch-Off when OCP Triggered
  • Fast Short-Circuit Response Time: 2µs
  • 2.5A Accurate Current Limiting
  • Reverse Current Blocking
  • 70m Ω On-Resistance
  • Input Voltage Range: 2.7V - 5.5V
  • Built-In Soft-Start with 0.6ms Typical Rise Time
  • Overcurrent and Thermal Protection
  • Fault Report (FLG) with Blanking Time (7ms typ)
  • ESD Protection: 2kV HBM, 200V MM
  • Active Low (AP2401A) or Active High (AP2411A) Enab le
  • Ambient Temperature Range: -40° C to +85° C
  • SO-8, MSOP-8, MSOP-8EP, U-DFN3030-8 and U-DFN2020- 6: Available in “Green” Molding Compound (No Br, Sb)
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • UL Recognized, File Number E322375
  • IEC60950-1 CB Scheme Certified Pin Assignments GND IN IN EN FLG OUT OUT NC (Top View) SO-8 FLG OUT OUT NC GND IN IN EN (Top View) MSOP-8/MSOP-8EP Note: Latter with exposed pad (dotted line) FLG OUT OUT NC GND IN IN EN (Top View) U-DFN3030-8 U-DFN2020-6

Applications

  • LCD TVs & Monitors
  • Set-Top-Boxes, Residential Gateways
  • Laptops, Desktops, Servers, E-Readers
  • Printers, Docking Stations, HUBs Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/ EU (RoHS 2) compliant. All applicable RoHS exemptio ns applied. 2. See http://www.diodes.com/quality/lead_free.htm l for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <9 00ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Green

Document number: DS37744 Rev. 1 - 2 2 of 18 www.diodes.com March 2015 © Diodes Incorporated AP2401 A/AP2411 A Typical Applications Circuit 0.1uF IN GND EN OUT ON 120uF Power Supply 2.7V to 5.5V 0.1uF OFF FLG Load 10k Enable Active High Available Options Part Number Channel Enable Pin (EN) Recommended Maximum Continuous Load Current (A) Typical Output Latch-Off Current Limit (A) Package AP2401A 1 Active Low 2 2.5 SO-8 MSOP-8 MSOP-8EP U-DFN3030-8 U-DFN2020-6 AP2411A 1 Active High Pin Descriptions Pin Name Pin Number Function SO-8, MSOP-8 MSOP-8EP, U-DFN3030-8 U-DFN2020-6 GND 1 1 2 Ground IN 2, 3 2, 3 1 Voltage Input Pin. Connect a 0.1µF or larger ceramic capacitor from IN to GND as close as possible. (all IN pins must be tied together externally) EN 4 4 3 Enable Input. Active low (AP2401A) or acti ve high (AP2411A). FLG 5 5 4 Over-temperature and overcurrent fault reporting with 7ms deglitch; active low open-drain output. FLG is disabled for 7ms after turn-on. OUT 6, 7 6, 7 5 Voltage Output Pin (all OUT pins must b e tied together externally) NC 8 8 6 No Internal Connection. Recommend tie to OUT pins. Exposed Pad — Exposed Pad Exposed Pad Exposed pad. It should be externally connected to GND plane and thermal mass for enhanced thermal impedance. Exposed pad should not be used as electrical ground conduction path.

Document number: DS37744 Rev. 1 - 2 3 of 18 www.diodes.com March 2015 © Diodes Incorporated AP2401 A/AP2411 A Functional Block Diagram Thermal Sense FLG OUT GND IN EN UVLO Current Limit Current Sense Deglitch Discharge Control Driver Absolute Maximum Ratings (@TA = +25° C, unless otherwise specified.) Symbol Parameter Ratings Unit ESD HBM Human Body Model ESD Protection 4 kV ESD MM Machine Model ESD Protection 300 V VIN Input Voltage (Note 4) -0.3 to 6.5 V VOUT Output Voltage (Note 4) -0.3 to VIN +0.3 or 6.5 V VEN , VFLG Enable Voltage (Note 4) -0.3 to VIN +0.3 or 6.5 V ILOAD Maximum Continuous Load Current Internal Limited A TJ(MAX) Maximum Junction Temperature 150 ° C TST Storage Temperature Range (Note 4) -65 to +150 ° C 5. UL Recognized Rating from -30° C to +70° C (Diode s qualified T ST from -65° C to +150° C). Caution: Stresses greater than the 'Absolute Maxim um Ratings' specified above, may cause permanent da mage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated i n this specification is not implied. Device reliabi lity may be affected by exposure to absolute maximum rating conditions for extended periods of time. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD pr ecautions should be taken when handling and transporting these devices. Recommended Operating Conditions (@TA = +25° C, unless otherwise specified.) Symbol Parameter Min Max Unit VIN Input Voltage 2.7 5.5 V IOUT Output Current 0 2 A VIL EN Input Logic Low Voltage 0 0.8 V VIH EN Input Logic High Voltage 2 VIN V TA Operating Ambient Temperature -40 +85 ° C

Document number: DS37744 Rev. 1 - 2 4 of 18 www.diodes.com March 2015 © Diodes Incorporated AP2401 A/AP2411 A Electrical Characteristics (@TA = +25° C, VIN = +5.0V, C IN = 0.1µF, C L= 1µF, unless otherwise specified.) Symbol Parameter Test Conditions (Note 5) Min Typ M ax Unit VUVLO Input UVLO VIN rising 1.6 2.0 2.4 V ∆VUVLO Input UVLO Hysteresis VIN decreasing - 50 - mV ISHDN Input Shutdown Current Disabled, OUT = open - 0.1 1 µA IQ Input Quiescent Current Enabled, OUT = open - 60 100 µA ILEAK Input Leakage Current Disabled, OUT grounded - 0.1 1 µA IREV Reverse Leakage Current Disabled, VIN = 0V, V OUT = 5V, I REV at V IN - 0.01 1 µA RDS(ON) Switch on-Resistance VIN = 5V, IOUT = 2.0A TA = +25° C - 70 84 mΩ -40° C ≤ T A ≤ +85° C - - 105 VIN = 3.3V, IOUT = 2.0A TA = +25° C - 90 108 ILIMIT Over-Load Current Limit (Note 6) V IN = 5V, V OUT = 4.5V -40° C ≤ T A ≤+85° C 2.05 2.5 2.85 A ITrig Current Limiting Trigger Threshold Output Current S lew rate (< 100A/s) - 2.5 - A ISHORT Short-Circuit Current Limit Enabled into short circ uit 1.8 2.75 3.3 A TSHORT Short-Circuit Response Time VOUT = 0V to IOUT = I LIMIT (OUT shorted to ground) - 2 - µs VIL EN Input Logic Low Voltage VIN = 2.7V to 5.5V - - 0.8 V VIH EN Input Logic High Voltage VIN = 2.7V to 5.5V 2 - - V ILEAK-EN EN Input Leakage VIN = 5V, VEN = 0V and 5.5V - 0.01 1 µA ILEAK-O Output Leakage Current Disabled, V OUT = 0V - 0.5 1 µA TD(ON) Output Turn-on Delay Time CL = 1µF, R LOAD = 5 Ω - 0.1 - ms TR Output Turn-on Rise Time CL = 1µF, R LOAD = 5 Ω - 0.6 1.5 ms TD(OFF) Output Turn-off Delay Time CL = 1µF, R LOAD = 5 Ω - 0.1 - ms TF Output Turn-off Fall Time CL = 1µF, R LOAD = 5 Ω - 0.05 0.1 ms RFLG FLG Output FET on-Resistance IFLG = 10mA - 25 40 Ω IFOH FLG Off Current VFLG = 5V - 0.01 1 µA TBLANK FLG Blanking and Latch-off Time Assertion or deassertion due to overcurrent and over- temperature condition 4 7 15 ms TDIS Discharge Time CL= 1µF, VIN = 5V, disabled to V OUT < 0.5V - 0.6 - ms RDIS Discharge Resistance (Note 7) VIN = 5V, disabled, IOUT = 1mA - 105 - Ω TSHDN Thermal Shutdown Threshold Enabled - 140 - ° C THYS Thermal Shutdown Hysteresis - - 20 - ° C θJA Thermal Resistance Junction-to- Ambient SO-8 (Note 8) - 96 - ° C/W MSOP-8 (Note 8) - 130 - ° C/W MSOP-8EP (Note 9) - 92 - ° C/W U-DFN3030-8 (Note 9) - 84 - ° C/W U-DFN2020-6 (Note 10) - 90 - ° C/W Notes: 6. Pulse-testing techniques maintain junct ion temperature close to ambient temperature; therm al effects must be taken into account separately. 7. The discharge function is active when the dev ice is disabled (when enable is de-asserted or duri ng power-up power-down when V IN < V UVLO . The discharge function offers a resistive di scharge path for the external storage capacitor for limited time. 8. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout. 9. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top la yer and thermal vias to bottom layer ground plane. 10. Device mounted on 1"x1" FR-4 substrate PCB, 2o z copper, with minimum recommended padon top layer and thermal vias to bottom layer ground.

Document number: DS37744 Rev. 1 - 2 5 of 18 www.diodes.com March 2015 © Diodes Incorporated AP2401 A/AP2411 A Typical Performance Characteristics VV VV EN EN EN EN 90 90 90 90% % %% VV VV OUT OUT OUT OUT TT TT DD DD( ( ((ON ON ON ON) ) )) 10 10 10 10% % %% TT TT DD DD( ( ((OFF OFF OFF OFF) ) )) 50 50 50 50% % %% 50 50 50 50% % %% TT TT RR RR 10 10 10 10% % %% 90 90 90 90% % %% TT TT FF FF VV VV EN EN EN EN 90 90 90 90% % %% VV VV OUT OUT OUT OUT TT TT DD DD( ( ((ON ON ON ON) ) )) 10 10 10 10% % %% TT TT DD DD( ( ((OFF OFF OFF OFF) ) )) 50 50 50 50% % %% 50 50 50 50% % %% TT TT RR RR 10 10 10 10% % %% 90 90 90 90% % %% TT TT FF FF Figure 1 Voltage Waveforms: AP2401A (left), AP2411A (right) All Enable Plots are for Enable Active Low Turn-Off Delay and Fall Time TA=25° C VIN =5V CL=120µF R OUT =2.5 Ω Vout 2V/div Ven 5V/div Iin 1A/div Device Disable Turn-On Delay and Rise Time TA=25° C VIN =5V CL=120µF R OUT =2.5 Ω Vout 2V/div Ven 5V/div Iin 1A/div Inrush Current Limit Device Enable Turn-Off Delay and Fall Time TA=25° C VIN =5V CL=1µF R OUT =2.5 Ω Vout 2V/div Ven 5V/div Iin 1A/div Device Disable Turn-On Delay and Rise Time TA=25° C VIN =5V CL=1µF R OUT =2.5 Ω Vout 2V/div Ven 5V/div Iin 1A/div Device Enable

Document number: DS37744 Rev. 1 - 2 6 of 18 www.diodes.com March 2015 © Diodes Incorporated AP2401 A/AP2411 A Typical Performance Characteristics (continued) Device Enabled Into Short-Circuit Inrush Current Full -Load to Short -Circuit Transient Response Output Short Circuit TA=25° C VIN =5V ROUT =2.5 Ω Device Turns off and Re-enables Into Current-Limit Vout 2V/div Iin 2A/div FLG 5V/div Device is latched-off No -Load to Short -Circuit Transient Response Output Short Circuit TA=25° C VIN =5V Vout 2V/div Iin 2A/div FLG 5V/div Device is latched-off Device Turns off and Re-enables Into Current-Limit T A=25° C VIN =5V CL=120µF R OUT =1 Ω Ven 5V/div Iout 1A/div Iout 0.5A/div Ven 5V/div T A=25° C VIN =5V CL=120µF,220uF, 470µF R OUT =5Ω CL=220µF CL=470µF CL=120µF

Document number: DS37744 Rev. 1 - 2 7 of 18 www.diodes.com March 2015 © Diodes Incorporated AP2401 A/AP2411 A Typical Performance Characteristics (cont.) Vin 2V/div Iout 2A/div UVLO Decreasing TA=25° C VIN =5V ROUT =2.5 Ω CL=120µF UVLO Increasing Vin 2V/div Iout 2A/div T A=25° C VIN =5V ROUT =2.5 Ω CL=120µF TA=25° C VIN =5V ROUT =2.5 Ω CL=120µF Vout 5V/div FLG 5V/div IIout 1A/div Power ON Vin 5V/div

Document number: DS37744 Rev. 1 - 2 8 of 18 www.diodes.com March 2015 © Diodes Incorporated AP2401 A/AP2411 A Typical Performance Characteristics (cont.) 100 110 120 130 140 150 160 170 180 190 200 2 2.5 3 3.5 4 4.5 5 5.5 6 Input Voltage (V) Turn-On vs. Input Voltage Turn-On Time (µs) C = 1µF R = 5 T = 25° C L L A Ω 100 120 140 160 180 200 220 240 260 2 2.5 3 3.5 4 4.5 5 5.5 6 Input Voltage (V) Turn-Off vs. Input Voltage Turn-Off Time (µs) 100 200 300 400 500 600 700 800 900 1000 2 2.5 3 3.5 4 4.5 5 5.5 6 Input Voltage (V) Rise Time vs. Input Voltage Rise Time (µs) C = 1µF R = 5 T = 25° C L L A Ω 100 2 2.5 3 3.5 4 4.5 5 5.5 6 Input Voltage (V) Fall Time vs. Input Voltage Fall Time (µs)

Document number: DS37744 Rev. 1 - 2 9 of 18 www.diodes.com March 2015 © Diodes Incorporated AP2401 A/AP2411 A Typical Performance Characteristics (cont.) 100 - 50 - 25 0 25 50 75 100 125 Temperature (C) Supply Current, Output Enabled vs. Temperature Supply Current Output Enabled (µA) V = 5.5V IN V = 5V IN V = 2.7V IN V = 3.3V IN -50 -25 0 25 50 75 100 125 Temperature (C) Supply Current, Output Disabled vs. Temperature Supply Current Output Disabled (µA) -0.30 0.30 0.25 0.20 0.15 0.10 -0.05 -0.10 0.05 -0.15 -0.20 -0.25 V = 5.5V IN V = 5V IN V = 2.7V IN V = 3.3V IN 100 110 120 130 140 150 160 170 180 -50 -25 0 25 50 75 100 125 Temperature (° C) R vs. T emperature DS(ON) R (m )DS(ON) Ω V = 5.5V IN V = 5V IN V = 2.7V IN V = 3.3V IN 3.0 -50 -25 0 25 50 75 100 125 Temperature (° C) Short-Circuit, Output Current vs. Temperature Short-Circuit Output Current (A) 2.9 2.8 2.7 2.6 2.5 2.4 2.3 2.2 2.0 2.1 V = 5.5V IN V = 5V IN V = 2.7V IN V = 3.3V IN 2.05 -50 -25 0 25 50 75 100 125 Temperature (° C) Undervoltage Lockout vs. Temperature Undervoltage Lockout (V) 2.10 2.15 1.90 1.95 2.00 1.65 1.70 1.75 1.80 1.85 UVLO Falling UVLO Rising 2.5 2.6 2.7 2 2.5 3 3.5 4 4.5 5 5.5 6 Input Voltage (V) Turn-Off vs. Input Voltage Threshold Trip Current (A) 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 C = 120µF T = 25° C L A

Document number: DS37744 Rev. 1 - 2 10 of 18 www.diodes.com March 2015 © Diodes Incorporated AP2401 A/AP2411 A

Application Information

Power Supply Considerations A 0.1 µF to 2.2 µF X7R or X5R ceramic bypass capacitor placed betwee n IN and GND, close to the device, is recommended. When an external power supply is used, or an additional ferrite bead is added to the input, high inrush current may cau se voltage spikes higher than the device maximum input rating during short circuit condition . In this case a 2.2 µF or bigger capacitor is recommended. Placing a hig h-value electrolytic capacitor on the input and output pin(s) is recomme nded when the output load is heavy. This precaution reduces power-supply transients that may cause ringing on the input. Additionally, bypas sing the output with a 0.1 µF to 1.0 µF ceramic capacitor improves the immunity of the de vice to short-circuit transients. Overcurrent and Short Circuit Protection An internal sensing FET is employed to check for ov ercurrent conditions. Unlike current-sense resistors, sense FETs do not increase the series resistance of the current path. When an overcurrent condition is detected, the devices will limit the current until the overload condition is removed or the internal deglitch time (7ms typical) is reached and the device is turned off. The device will remain latched off even the overload condition is removed until power is cycled or the device enable is toggled. Three possible overload conditions can occur. In th e first condition, the output has been shorted to G ND before the device is enabled or before VIN has been applied. The AP2401A/AP2411A senses th e short circuit and immediately clamps output curre nt to a certain safe level namely ILIMIT , and turns off after deglitch time (7ms typical). In the second condition, an output short or an over load occurs while the device is enabled. At the ins tance the overload occurs, higher current may flow for a very short period of time before the current limit function can react. After the curren t limit function has tripped (reached the overcurrent trip threshold), the device switches in to current limiting mode and the current is clamped at I LIMIT current for deglitch time period (7ms typical), and then turned off. In the third condition, the load has been gradually increased beyond the recommended operating current. The current is permitted to rise until the current-limit threshold (I TRIG ) is reached or until the thermal limit of the devi ce is exceeded. The AP2401A/AP2411A is capable of d elivering current up to the current-limit threshold without d amaging the device. Once the threshold has been rea ched, the device switches into its current limiting mode and output current is clamped at I LIMIT for deglitch time period (7ms typical), and then turned off. FLG Response When an overcurrent or over-temperature shutdown co ndition is encountered, the FLG open-drain output g oes active low after a nominal 7ms deglitch timeout. When that happens, the FLG will remain low and the switch will be latched off until the fault condition is removed. Connecting a heavy capacitive load to the output of the device can cause a moment ary overcurrent condition, which does not trigger t he FLG due to the 7ms deglitch timeout. The AP2401A/AP2411A is designed to eliminate false, overcurrent reporting without the need of external components to remove unwanted pulses. Power Dissipation and Junction Temperature The low, on-resistance of the internal MOSFET allow s the small surface-mount packages to pass large cu rrent. Using the maximum operating ambient temperature (TA) and R DS(ON), the power dissipation can be calculated by: PD = R DS(ON)× I2 Finally, calculate the junction temperature: T J = P D x R θ JA + T A Where: TA= Ambient Temperature° C Rθ JA = Thermal Resistance PD = Total Power Dissipation Thermal Protection Thermal protection prevents the IC from damage when heavy-overload or short-circuit faults are present for extended periods of time. The AP2401A/AP2411A implements a thermal sensing to mon itor the operating junction temperature of the powe r distribution switch. Once the die temperature rises to approximately 140° C due to exc essive power dissipation in an overcurrent conditio n, the internal thermal sense circuitry turns the power switch off, thus preventing the power switch from damage. Hysteresis is built into the thermal sense circuit allowing the device to cool down approximately 25° C before the switch turns back on. The switch continues to cycle in this ma nner until the load fault or input power is removed. The FLG open-drain output is asserted when an over-temperature shutdown occurs with 7ms deglitch. When the FLG is asserted, the switch will be latched off until the temperature drops to 20° C below the thermal shutdown threshold and the power or EN pin is cycled.

Document number: DS37744 Rev. 1 - 2 11 of 18 www.diodes.com March 2015 © Diodes Incorporated AP2401 A/AP2411 A Application Information (continued) Undervoltage Lockout (UVLO) Undervoltage lockout function (UVLO) keeps the internal power switch from being turned on until the power supply has reached at least 2V, even if the switch is enabled. Whenever the input voltag e falls below approximately 2V, the power switch is quickly turned off. This facilitates the design of hot-insertion systems where it is not possible to turn off the power switch before input power is removed. Discharge Function The discharge function of the device is active when enable is disabled or de-asserted. The discharge f unction with the N-MOS power switch implementation is activated and offers a resistive discharge path for the external storage capacitor. This is designed for discharging any residue of the output voltage when either no external output resistance or load resistance is present at the output. Dual-Purpose Port Applications AP2401A/AP2411A is suitable for use in dual-purpose port applications in which a single port is used f or data communication between the host and peripheral devices while simultaneously maintai ning a charge to the battery of the peripheral devi ce. An example of this is a shared HDMI/MHL (Mobile High-definition Link) port that al lows streaming video between an HDTV or set-top box and a smartphone or tablet while maintaining a charge to the smartphone or tablet ba ttery. In such dual-purpose port applications, it i s important to insure Vin of the AP2401A/AP2411A is ramped to its operating voltage prior to enabling the output. Since the AP2401A/AP2411A includes an embedded discharge feature that discharges the output load of the device when the device is disabled, the batteries of the connected peripheral device will be subject to continual discharge whenever the AP2401A/AP2411A is disabled. An overstress condition to the device's discharge MOS transistor may result.

Ordering Information

Code Packaging 7”/13” Tape and Reel Quantity Part Number Suffix AP24X1AS-13 New Product S SO-8 2,500/Tape & Reel -13 AP24X1AM8-13 New Product M8 MSOP-8 2,500/Tape & Reel -13 AP24X1AMP-13 New Product MP MSOP-8EP 2,500/Tape & R eel -13 AP24X1AFGE-7 New Product FGE U-DFN3030-8 3,000/Tape & Reel -7 AP24X1ASN-7 Preview SN U-DFN2020-6 3,000/Tape & Reel -7

Document number: DS37744 Rev. 1 - 2 12 of 18 www.diodes.com March 2015 © Diodes Incorporated AP2401 A/AP2411 A Marking Information (1) SO-8 (2) MSOP-8 (3) MSOP-8EP

Document number: DS37744 Rev. 1 - 2 13 of 18 www.diodes.com March 2015 © Diodes Incorporated AP2401 A/AP2411 A Marking Information (continued) (4) U-DFN3030-8 XX : Identification Code ( Top View ) X : A~Z : Internal Code XY X X W Y : Year : 0~9 W : Week : A~Z : 1~26 week; a~z : 27~52 week; z represents 52 and 53 week Part Number Package Identification Code AP2401AFGE-7 U-DFN3030-8 4W AP2411AFGE-7 U-DFN3030-8 4X (5) U-DFN2020-6 XX : Identification Code ( Top View ) X : A~Z : Internal Code XY X X W Y : Year : 0~9 W : Week : A~Z : 1~26 week; a~z : 27~52 week; z represents 52 and 53 week Part Number Package Identification Code AP2401ASN-7 U-DFN2020-6 4Y AP2411ASN-7 U-DFN2020-6 4Z

Document number: DS37744 Rev. 1 - 2 14 of 18 www.diodes.com March 2015 © Diodes Incorporated AP2401 A/AP2411 A Package Outline Dimensions (All dimensions in mm.) Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 1. Package type: SO-8 2. Package type: MSOP-8 SO -8 Dim Min Max A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h - 0.35 L 0.62 0.82 θθ θθ 0° 8° All Dimensions in mm MSOP -8 Dim Min Max Typ A - 1.10 - A1 0.05 0.15 0.10 A2 0.75 0.95 0.86 A3 0.29 0.49 0.39 b 0.22 0.38 0.30 c 0.08 0.23 0.15 D 2.90 3.10 3.00 E 4.70 5.10 4.90 E1 2.90 3.10 3.00 E3 2.85 3.05 2.95 e - - 0.65 L 0.40 0.80 0.60 a 0° 8° 4° x - - 0.750 y - - 0.750 All Dimensions in mm Gauge Plane Seating Plane Detail ‘A’ Detail ‘A’ EE1 h L D e b A 45 ° 7° ~9° 0.254 A e Seating Plane Gauge Plane L See Detail C Detail C c a E y x D b 0.25 4x10° 4x10°

Document number: DS37744 Rev. 1 - 2 15 of 18 www.diodes.com March 2015 © Diodes Incorporated AP2401 A/AP2411 A Package Outline Dimensions (cont.) (All dimensions in mm.) Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 3. Package type: MSOP-8EP 4. Package type: U-DFN3030-8 Type E D D 2 E e b LE2 A A 3 ( Pin #1 ID) S e a ti n g P l a n e z A 1 R 0 . 2 0 0 5. Package type: U-DFN2020-6 D D 2 E e b L E 2 A A 1 A 3 D 2 / 2 E 2 / 2 R 0 . 1 0 0 Seating Pl ane P in # 1 I D MSOP -8EP Dim Min Max Typ A - 1.10 - A1 0.05 0.15 0.10 A2 0.75 0.95 0.86 A3 0.29 0.49 0.39 b 0.22 0.38 0.30 c 0.08 0.23 0.15 D 2.90 3.10 3.00 D1 1.60 2.00 1.80 E 4.70 5.10 4.90 E1 2.90 3.10 3.00 E2 1.30 1.70 1.50 E3 2.85 3.05 2.95 e - - 0.65 L 0.40 0.80 0.60 a 0° 8° 4° x - - 0.750 y - - 0.750 All Dimensions in mm U-DFN3030 -8 (TYPE E) Dim Min Max Typ A 0.57 0.63 0.60 A1 0.00 0.05 0.02 A3 - - 0.15 b 0.20 0.30 0.25 D 2.95 3.05 3.00 D2 2.15 2.35 2.25 E 2.95 3.05 3.00 E2 1.40 1.60 1.50 e - - 0.65 L 0.30 0.60 0.45 z - - 0.40 All Dimensions in mm U-DFN2020 -6 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3   0.15 b 0.20 0.30 0.25 D 1.95 2.075 2.00 D2 1.45 1.65 1.55 e   0.65 E 1.95 2.075 2.00 E2 0.76 0.96 0.86 L 0.30 0.40 0.35 All Dimensions in mm D A E e y x Seating Plane Gauge Plane L D 8Xb See Detail C Detail C c a 4X10° 4X10° 0.25D1

Document number: DS37744 Rev. 1 - 2 16 of 18 www.diodes.com March 2015 © Diodes Incorporated AP2401 A/AP2411 A Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. (1) Package type: SO-8 (2) Package type: MSOP-8 (3) Package type: MSOP-8EP Dimensions Value (in mm) X 0.60 Y 1.55 C1 5.4 C2 1.27 Dimensions Value (in mm) C 0.650 X 0.450 Y 1.350 Y1 5.300 Dimensions Value (in mm) C 0.650 G 0.450 X 0.450 X1 2.000 Y 1.350 Y1 1.700 Y2 5.300 X C Y X Y G X C Y Y2 Y1

Document number: DS37744 Rev. 1 - 2 17 of 18 www.diodes.com March 2015 © Diodes Incorporated AP2401 A/AP2411 A Suggested Pad Layout (continued) Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. (4) Package type: U-DFN3030-8 Type E Y 2 C X 1 Y X (5) Package type: U-DFN2020-6 Y G G C X X Dimensions Value (in mm) C 0.650 X 0.350 X1 2.350 X2 2.300 Y 0.650 Y1 1.600 Y2 3.300 Dimensions Va lue (in mm) C 0.65 G 0.15 X 0.37 X1 1.67 Y 0.45 Y1 0.90

Document number: DS37744 Rev. 1 - 2 18 of 18 www.diodes.com March 2015 © Diodes Incorporated AP2401 A/AP2411 A IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTI ES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve th e right to make modifications, enhancements, improv ements, corrections or other changes without further notice to this document and any pro duct described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Cu stomer or user of this document or products describ ed herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporate d products for any unintended or unauthorized appli cation, Customers shall indemnify and hold Diodes Incorporated and its representatives ha rmless against all claims, damages, expenses, and a ttorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patent s pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be tran slated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not a uthorized for use as critical components in life su pport devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to per form when properly used in accordance with instruct ions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary ex pertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety- critical, life support devices or systems, notwiths tanding any devices- or systems-related information or support that may be provided by Diod es Incorporated. Further, Customers must fully ind emnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com