AP2305GN LEIDITECH | Alldatasheet
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VDSS=-20V／VGSS=±12V／ID=4.5A RDS(ON)=65mΩ(max.)@VGS=-10V RDS(ON)=80mΩ(max.)@VGS=-4.5V RDS(ON)=125mΩ(max.)@VGS=-2.5V Reliable and Rugged Avalanche Rated Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Pin Description Absolute Maximum Ratings ( TA=25°C unless otherwise noted ) Parameter Symbol Maximum Units Drain-Source V oltage VDS -20 V Gate-Source V oltage VGS ±12 V Continuous Drain Current A TA=25°C ID -4.5 A TA=70°C -3 Pulsed Drain Current B IDM -15 Power Dissipation A TA=25°C PD 1.2 W TA=70°C 0.8 Junction-to-Ambient A Steady-State RθJA 175 °C/W Junction and Storage Temperature TJ, TSTG -55 to 150 °C Rev : 01.06.2014 1/3 www.leiditech.com AP2305GN
Electrical Characteristics ( TA=25°C unless otherwise noted ) Symbol Parameter Test Conditions Min. Typ Max. Unit Static Characteristics BVDSS Drain-Source Breakdown V oltage VGS=0V, ID=-250uA -20 V IDSS Zero Gate V oltage Drain Current VDS=-16V, VGS=0V 1 uA TJ=85°C 30 VGS(th) Gate Threshold V oltage VDS= VGS, ID=-250uA -0.45 -0.65 -1 V BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 V IGSS Gate Leakage Current VDS=0V, VGS=±12V 100 nA RDS(on) Drain-Source On-Resistance VGS=-10V, ID=-4.2A 52 65 mΩ VGS=-4.5V, ID=-3A 68 80 VGS=-2.5V, ID=-1A 105 125 VSD Diode Forward V oltage ISD=-1A,VGS=0V -1.3 V IS Maximum Body-Diode Continuous Current -1.5 A Dynamic Parameters Ciss Input Capacitance VGS=0V, VDS=-10V, f=1MHz 670 pF Coss Output Capacitance 62 pF Crss Reverse Transfer Capacitance 48 pF RG Gate Resistance VGS=0V, VDS=0V, f=1MHz 6 Ω Switching Parameters Qg Total Gate Charge ID=-4A, VDS=-10V, VGS=-4.5V 12 nC Qgs Gate Source Charge 2.1 nC Qgd Gate Drain Charge 2.3 nC tD(on) Turn-On DelayTime VGS=-4.5V, VDD=-10V, RG=6Ω 35 ns tr Turn-On Rise Time 22 ns tD(off) Turn-Off DelayTime 33 ns tf Turn-Off Fall Time 15 ns trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/μs 13 ns Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/μs 6 nC A: The value of RθJA is measured in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: Pulse test: pulse width ≦ 300us, duty cycle ≦ 2%. D: Guaranteed by design, not subject to production testing. Rev : 01.06.2014 2/3 www.leiditech.com AP2305GN
Package Outline Dimensions in Millimeters SOT23 Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : 01.06.2014 3/3 www.leiditech.com AP2305GN