AP2101

AP2101/AP2111

Document overview

• Manufacturer or author: Diodes Incorporated
• PDF pages: 14

Technical content

Features

• Single USB port power switches with auto-discharge
• Short-circuit current and thermal protection
• 2.45A accurate current limiting
• Fast transient response time: 5 μs
• 90m Ω on-resistance
• Reverse Current Blocking
• Input voltage range: 2.7V – 5.5V
• 0.6ms typical rise time
• Very low shutdown current: 1 μA (max)
• Fault report (FLG) with blanking time (7ms typ)
• ESD protection: 4kV HBM, 300V MM
• Active low (AP2101) or active high (AP2111) enable
• Ambient temperature range: -35°C to 85°C
• SO-8 and MSOP-8EP (Exposed Pad): Available in “Green” Molding Compound (No Br, Sb) ƒ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ƒ Halogen and Antimony Free. “Green” Device (Note 3)
• UL Recognized, File Number E322375
• IEC60950-1 CB Scheme Certified Pin Assignments SO-8 ( Top View ) NC OUT FLG OUT GND EN IN IN MSOP-8EP NC OUT FLG OUT GND EN IN IN ( Top View )

Applications

• Consumer electronics – LCD TV & Monitor, Game Machines
• Communications – Set-Top-Box, GPS, Smartphone
• Computing – Laptop, Desktop, Servers, Printers, Docking Station, HUB Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoH S 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com for more in formation about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Typical Applications Circuit 0.1uF IN GNDEN OUT ON 120uF Power Supply 2.7V to 5.5V 0.1uF OFF FLG Load 10k 10uF AP2111 Enable Active High

Document number: DS32015 Rev. 3 - 2 2 of 14 www.diodes.com January 2013 © Diodes Incorporated AP2101/AP2111 Available Options Part Number Channel Enable Pin (EN) Current Limit (Typical) Recommended Maximum Continuous Load Current AP2101 1 Active Low 2.45A 2.0A AP2111 1 Active High 2.45A 2.0A Pin Descriptions Pin Name Pin Number Functions SO-8 MSOP-8EP GND 1 1 Ground IN 2, 3 2, 3 Voltage input pin (all IN pi ns must be tied together externally) EN 4 4 Enable input, active low ( AP2101) or active high (AP2111) FLG 5 5 Over-current and over-temperature fault r eport; open-drain flag is active low when triggered OUT 6, 7 6, 7 Voltage output pin (all OUT pins must be tied together externally) NC 8 8 No internal connection; recommend tie to OUT pins Exposed tab — Exposed tab Exposed pad. It should be connected to GND and thermal mass for enhanced thermal impedance. It should not be used as electrical ground conduction path. Functional Block Diagram Thermal Sense FLG OUT GND IN EN UVLO Current Limit Current Sense Deglitch Discharge Control Driver Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Parameter Ratings Units ESD HBM Human Body Model ESD Protection 4 kV ESD MM Machine Model ESD Protection 300 V VIN Input Voltage 6.5 V VOUT Output Voltage VIN +0.3 V VEN , VFLG Enable Voltage 6.5 V ILOAD Maximum Continuous Load Current Internal Limited A TJ(MAX) Maximum Junction Temperature 150 °C TST Storage Temperature Range (Note 4) -65 to +150 °C Caution: Stresses greater than the 'Absol ute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indi cated in this specification is not imp lied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. Semiconductor devices are ESD sensitive and may be damaged by ex posure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices Note: 4. UL Recognized Rating from -30°C to 70°C (Diodes qualified TST from -65°C to 150°C)

Document number: DS32015 Rev. 3 - 2 3 of 14 www.diodes.com January 2013 © Diodes Incorporated AP2101/AP2111 Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Symbol Parameter Min Max Units VIN Input voltage 2.7 5.5 V IOUT Output Current 0 2.0 A TA Operating Ambient Temperature -35 85 °C VIL EN Input Logic Low Voltage 0 0.8 V VIH EN Input Logic High Voltage 2 VIN V Electrical Characteristics (@TA = +25°C, VIN = +5.0V, unless otherwise specified.) Symbol Parameter Test Conditions (Note 5) Min Typ Max Unit VUVLO Input UVLO RLOAD = 1kΩ 1.6 1.9 2.5 V ISHDN Input Shutdown Current Disabled, IOUT = 0 0.5 1 µA IQ Input Quiescent Current Enabled, IOUT = 0 45 70 µA ILEAK Input Leakage Current Disabled, OUT grounded 1 µA IREV Reverse Leakage Current Disabled, VIN = 0V, VOUT = 5V, IREV at VIN 0.05 µA RDS(ON) Switch On-Resistance VIN = 5V, IOUT = 1.5A TA = +25°C MSOP8-EP 90 115 mΩ SO-8 95 115 VIN = 3.3V, IOUT = 1.5A TA = 25°C 115 140 ILIMIT Over-Load Current Limit VIN = 5V, VOUT = 4.5V, CL=120µF 2.1 2.45 2.8 A ITRIG Current Limiting Trigger Threshold Output Current Slew rate (<100A/s) , CL = 100µF 2.5 A ISHORT Short-Circuit Current Limit Enabled into short circuit, CL = 100µF 2.5 A TSHORT Short-Circuit Response Time VOUT = 0V to IOUT = ILIMIT (short applied to output) 5 µs VIL EN Input Logic Low Voltage VIN = 2.7V to 5.5V 0.8 V VIH EN Input Logic High Voltage VIN = 2.7V to 5.5V 2 V ISINK EN Input leakage VEN = 5V 1 µA TD(ON) Output Turn-On Delay Time CL = 1µF, RLOAD = 10Ω 50 µs TR Output Turn-On Rise Time CL = 1µF, RLOAD = 10Ω 0.6 1.5 ms TD(OFF) Output Turn-Off Delay Time CL = 1µF, RLOAD = 10Ω 4 µs TF Output Turn-Off Fall Time CL = 1µF, RLOAD = 10Ω 0.03 0.1 ms RFLG FLG Output FET On-Resistance IFLG =10mA, CL=100µF 20 40 Ω TBLANK FLG Blanking Time CIN = 10µF, CL = 100µF 4 7 15 ms RDIS Discharge Resistance (Note 6) VIN = 5V, disabled, IOUT = 1mA 290 Ω TSHDN Thermal Shutdown Threshold Enabled, RLOAD = 1kΩ 140 °C THYS Thermal Shutdown Hysteresis 25 °C θJA Thermal Resistance Junction-to- Ambient SO-8 (Note 7) 110 °C/W MSOP-8EP (Note 8) 60 °C/W Notes: 5. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. 6. The discharge function is active when the device is disa bled (when enable is de-asserted). The discharge function offers a resistive discharge path for the external storage capacitor. This is suitable only to discharge filter capacitors for limited time and cannot dissipate steady state currents greater than 8mA. 7. Test condition for SO-8: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout. 8. Test condition for MSOP-8EP: Device mounted on 2” x 2” FR -4 substrate PC board, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground plane.

Figure 1. Voltage Waveforms: AP2101 (left), AP2111 (right)

Document number: DS32015 Rev. 3 - 2 5 of 14 www.diodes.com January 2013 © Diodes Incorporated AP2101/AP2111 Typical Performance Characteristics (cont.) Short Circuit Current, Device Enabled Into Short 500us/div Inrush Current 1ms/div 0.6 Ω Load Connected to Enabled Device 2ms/div Short Circuit with Blanking Time and Recovery 50ms/div Power On 1ms/div Power Off 10ms/div Iout 1A/div Vflag 5V/div VIN = 5V TA = +25°C CL = 100µF TA = +25°C CL = 100µF RL = 2.5Ω Iout 2A/div Vout 5V/div Vout 5V/div Vflag 5V/div VIN = 5V TA = +25°C CL = 100µF Vflag 5V/div Iout 1A/div Vin 5V/div Iout 500mA/div Ven 5V/div VIN = 5V TA = +25°C CL = 100µF Iout 500mA/div Ven 5V/div VIN = 5V TA = +25°C RL = 2.5Ω CL=470µF CL=220µF CL=100µF Vflag 5V/div Iout 1A/div Vin 5V/div Vout 5V/div TA = +25°C CL = 100µF RL = 2.5Ω

Document number: DS32015 Rev. 3 - 2 6 of 14 www.diodes.com January 2013 © Diodes Incorporated AP2101/AP2111 Typical Performance Characteristics (cont.) Device Enabled 1ms/div Device Disabled 1ms/div UVLO Increasing 1ms/div UVLO Decreasing 10ms/div Turn-On Time vs Input Voltage 250 350 450 550 650 750 850 Input Voltage (V) Turn-On Time (us) Turn-Off Time vs Input Voltage Input Voltage (V) Turn-Off Time (us) Vflag 5V/div Iout 1A/div Ven 5V/div Vout 5V/div Vflag 5V/div Iout 1A/div Ven 5V/div Vout 5V/div CL = 1µF RL = 10Ω TA =+ 25°C CL = 1µF RL = 10Ω TA =+ 25°C Iout 500mA/div TA = +25°C CL = 100µF RL = 2.5Ω Vin 2V/div Iout 500mA/div TA = +25°C CL = 100µF RL = 2.5Ω Vin 2V/div VIN = 5V TA = +25°C CL = 100µF RL = 2.5Ω VIN = 5V TA = +25°C CL = 100µF RL = 2.5Ω

Document number: DS32015 Rev. 3 - 2 7 of 14 www.diodes.com January 2013 © Diodes Incorporated AP2101/AP2111 Typical Performance Characteristics (cont.) Rise Time vs Input Voltage 300 350 400 450 500 550 600 650 22 . 533 . 544 . 555 . 56 Input Voltage (V) Rise Time (us) Fall Time vs Input Voltage 22 . 533 . 544 . 555 . 56 Input Voltage (V) Fall Time (us) Supply Current, Output Enabled vs Ambient Temperature -60 -40 -20 0 20 40 60 80 100 A mbient Tem perature (°C) Supply Current, Output Enabled (uA) Supply Current, Output Disabled vs Ambient Temperature 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -60 -40 -20 0 20 40 60 80 100 A mbient Temperature (°C) Supply Current, Output Disabled (uA) Static Drain-Source On-State Resistance vs Ambient Temperature 100 110 120 130 140 -60 -40 -20 0 20 40 60 80 100 A mbient Tem perature (°C) Static Drain-Source On-State Resistance (mΩ) Short-Circuit Output Current vs Ambient Temperature 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 -60 -40 -20 0 20 40 60 80 100 A m bient Tem perature (°C) Short-Circuit Output Current (A) Vin=3.3V Vin=5.0V Vin=3.3V CL = 120µF Vin=5.0V Vin=3.3V Vin=5.5V Vin=5.0V Vin=5.5V Vin=3.3V CL = 1µF RL = 10Ω TA = +25°C CL = 1µF RL = 10Ω TA =+ 25°C Vin=5.0V

Document number: DS32015 Rev. 3 - 2 8 of 14 www.diodes.com January 2013 © Diodes Incorporated AP2101/AP2111 Typical Performance Characteristics (cont.) Undervoltage Lockout vs Ambient Temperature 1.90 1.95 2.00 2.05 2.10 2.15 -60 -40 -20 0 20 40 60 80 100 A m bient Temperature (°C) Undervoltage Lockout (V) Threshold Trip Current vs Input Voltage 3.08 3.10 3.12 3.14 3.16 3.18 3.20 3.22 3.24 Input Voltage (V) Threshold Trip Current (A) Current Limit Response vs Peak Current 02468 1 0 1 2 Peak Current (A) Current Limit Response (us) UVLO Falling UVLO Rising TA = +25°C CL = 68µF VIN = 5V TA = +25°C

Document number: DS32015 Rev. 3 - 2 9 of 14 www.diodes.com January 2013 © Diodes Incorporated AP2101/AP2111

Application Information

Power Supply Considerations A 0.1- μF to 1- μF X7R or X5R ceramic bypass capacitor between IN and GND, close to the device, is recommended. Placing a high-value electrolytic capacitor on the input (10- μF minimum) and output pin(s) is recommended when the output load is heavy. Th is precaution reduces power-supply transients that may cause ringing on the input. Additionally, bypassing the output with a 0.01- μF to 0.1- μF ceramic capacitor improves the immunity of the device to short-circuit transients. Over-Current and Short Circuit Protection An internal sensing FET is employed to c heck for over-current conditions. Unlike curr ent-sense resistors, sense FETs do not inc rease the series resistance of the current path. When an overcurrent condition is detected, the device maintains a constant output current and r educes the output voltage accordingly. Complete shutdown occurs only if the fault stays long enough to activate thermal limiting. Three possible overload conditions can occur. In the first condition, the output has been shorted to GND before the device is e nabled or before VIN has been applied. The AP2101/AP2111 senses the short circuit and immediately clamps output current to a certain safe level namely ILIMIT. In the second condition, an output short or an overload occurs while the device is enabl ed. At the instance the overload occur s, higher current may flow for a very short period of time before the current lim it function can react. After t he current limit function has trip ped (reached the over- current trip threshold), the device switches into current limiting mode and the current is clamped at ILIMIT. In the third condition, the load has been gradually increased be yond the recommended operating current. The current is permitte d to rise until the current-limit threshold (ITRIG) is reached or until the thermal limit of the device is exceeded. The AP2101/AP2111 is capable of delivering current up to the current-limit threshold without damaging the device. On ce the threshold has been reached, the device switches into it s current limiting mode and is set at ILIMIT. To protect against short circuit to GND at extr emely low temperature (< -30°C), a minimum 120- μF electrolytic capacitor on the output pin is recommended. A correct capacitor type with capacitor voltage rati ng and temperature characteristics must be properly chosen so that capacitance value does not drop too low at the extremely low te mperature operation. A recomm ended capacitor should have temper ature characteristics of less than 10% variati on of capacitance change when operated at extr emely low temp. Our recommended aluminum electrolytic capacitor type is Panasonic FC series. At low input voltage condition (VIN < 3V), the short circuit protection current may rise as high as twice the typical value. FLG Response When an over-current or over-temperature shutdown condition is encountered, the FLG open -drain output goes active low after a n ominal 7-ms deglitch timeout. The FLG output remains low until both over-curr ent and over-temperature conditions are removed. Connecting a heavy capacitive load to the output of the device can cause a momentary over-current condition, which does not trigger the FLG due to the 7-ms deglitch timeout. The AP2101/AP2111 is designed to elimi nate false over-current reporting without the need of external components to rem ove unwanted pulses. Power Dissipation and Junction Temperature The low on-resistance of the internal MOSFET allows the small surface-mount packages to pass large current. Using the maximum o perating ambient temperature (TA) and RDS(ON), the power dissipation can be calculated by: PD = RDS(ON)× I Finally, calculate the junction temperature: TJ = PD x RθJA + TA Where: TA= Ambient temperature °C RθJA = Thermal resistance PD = Total power dissipation

Document number: DS32015 Rev. 3 - 2 10 of 14 www.diodes.com January 2013 © Diodes Incorporated AP2101/AP2111 Application Information (cont.) Thermal Protection Thermal protection prevents the IC from damage when heavy-overload or short-circuit faults are present for extended periods of time. The AP2101/AP2111 implements a thermal sensing to monitor the operati ng junction temperature of the power distribution switch. Once the die temperature rises to approximately 140°C due to excessive power di ssipation in an over-current or short-circuit condition the i nternal thermal sense circuitry turns the power switch off, thus preventing the power switch from damage. Hysteresis is built into the thermal sense circuit allowing the device to cool down approximately 25°C before the switch turn s back on. The switch continues to cycle in this manner until the load fault or input power is removed. The FLG open-drain output is asserted when an over-temperature shutdown or over-current occurs with 7-ms deglitch. Under-Voltage Lockout (UVLO) Under-voltage lockout function (UVL O) keeps the internal power switch from bei ng turned on until the power supply has reached a t least 1.9V, even if the switch is enabled. Whenever the input voltage falls below approximately 1.9V, the power switch is quickly turned off. This facilitates the design of hot-insertion systems where it is not possible to turn off the power switch before input power is removed. Host/Self-Powered HUBs Hosts and self-powered hubs (SPH) have a local power supply that powers the embedded functions and the downstream ports. This power supply must provide from 5.25V to 4.75V to the board side of the downstream connection under both full-load and no-load conditions. Ho sts and SPHs are required to have current-limit protection and must report ov er-current conditions to the USB controller. Typical SPHs are d esktop PCs, monitors, printers, and stand-alone hubs. Generic Hot-Plug Applications In many applications it may be necessary to remove modules or pc boards while the main unit is still operating. These are consi dered hot-plug applications. Such implementations require th e control of current surges seen by the main power supply and the card being inser ted. The most effective way to control these surges is to limit and slowly ramp the current and voltage being applied to the card, similar to the way in which a power supply normally turns on. Due to the controlled rise times and fall times of the AP2101/AP2111, these devices can be used to provide a softer start-up to devices being hot-plugged into a powered system. The UVLO feature of the AP2101/AP2111 also ensures that the switch is off after the card has been removed, and that the switch is off during the next insertion. By placing the AP2101/AP2111 between the VCC input and the rest of t he circuitry, the input power reaches these devices first a fter insertion. The typical rise time of the switch is approximately 1ms, provid ing a slow voltage ramp at the output of the device. This imple mentation controls system surge current and provides a hot-plugging mechanism for any device.

O M AP2101/AP2 Document number Ordering In Part Num AP21X1S AP21X1MP Marking Inf (1) SO-8 (2) MSOP-8 E 2111 r: DS32015 Rev. 3 nformation mber P SG-13 PG-13 formation Part 6 : A 7 : A EP Par 6 : A 7 : A - 2 n Package Code S MP t Number Logo Active Low Active High rt Number Logo Active Low Active High w Packagin SO-8 MSOP-8E AP21 ( Top YY W 1 2 AP21 ( Top V 1 2 11 of 14 www.diodes.co ng EP 1X X D p View ) WW X X X X D View ) Y W X E m Quantity 2500/Tape & 2500/Tape & WW : We YY : Year G : Green X : Interna 1 : 1 Chan represent Y : Year : 0~ A~Z : Green 1 : 1 Chann A~Z : 27~52 W : Week : 52 and 53 w MSOP-8-EP 13” Tape an y Reel Reel ek : 01~52; 52 r : 08, 09,10~ n al Code nnel ts 52 and 53 w n el 2 week; Z repr a~z : 1~26 we week P AP2101/A nd Reel Part Numb week resents ek; January 201 © Diodes Incorporate AP2111 ber Suffix ed

Document number: DS32015 Rev. 3 - 2 12 of 14 www.diodes.com January 2013 © Diodes Incorporated AP2101/AP2111 Package Outline Dimensions (All dimensions in mm.) Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. (1) SO-8 (2) MSOP-8EP SO-8 Dim Min Max A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h - 0.35 L 0.62 0.82 θ 0° 8 ° All Dimensions in mm MSOP-8EP Dim Min Max Typ A - 1.10 - A1 0.05 0.15 0.10 A2 0.75 0.95 0.86 A3 0.29 0.49 0.39 b 0.22 0.38 0.30 c 0.08 0.23 0.15 D 2.90 3.10 3.00 D1 1.60 2.00 1.80 E 4.70 5.10 4.90 E1 2.90 3.10 3.00 E2 1.30 1.70 1.50 E3 2.85 3.05 2.95 e - - 0.65 L 0.40 0.80 0.60 a 0° 8° 4° x - - 0.750 y - - 0.750 All Dimensions in mm Gauge Plane Seating Plane Detail ‘A’ Detail ‘A’ EE1 h L D e b A 45° 7°~9° 0.254 D A E e y x Seating Plane Gauge Plane L D 8Xb See Detail C Detail C c a 4X10° 4X10° 0.25

Document number: DS32015 Rev. 3 - 2 13 of 14 www.diodes.com January 2013 © Diodes Incorporated AP2101/AP2111 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. (1) SO-8 (2) MSOP-8-EP Dimensions Value (in mm) X 0.60 Y 1.55 C1 5.4 C2 1.27 Dimensions Value (in mm) C 0.650 G 0.450 X 0.450 X1 2.000 Y 1.350 Y1 1.700 Y2 5.300 X Y G X C Y Y2 Y1

Document number: DS32015 Rev. 3 - 2 14 of 14 www.diodes.com January 2013 © Diodes Incorporated AP2101/AP2111 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability ari sing out of the application or use of this document or an y product described herein; neither does Di odes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of t his document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated www.diodes.com