AP05N20GH-HF

AP05N20GH-HF VBSEMI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 10

Technical content

a. Repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. V DD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 4.8 A (see fig. 12). c. I SD  5.2 A, dI/dt  95 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. Whe n mounted on 1" square PCB (FR-4 or G-10 material). PRODUCT SUMMARY VDS (V) 200 RDS(on) ()V GS = 10 V 0.85 Qg (Max.) (nC) 13 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration S ingle N-Channel MOSFET G D S DPAK (TO-252) S D G ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, un less otherwise noted) PARAMETER SYMBOL LIMIT U NIT Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 5.0 ATC = 100 °C 4.0 Pulsed Drain Curr enta IDM 20 Linear Derating Factor 0.33 W/°C Linear Derating Factor (PCB Mount) e 0.020 Single Pulse Aval anche Energy b EAS 161 mJ Repetitive Aval anche Current a IAR 4.8 A Repetitive Av alanche Energy a EAR 4.2 mJ Maximum Power Dissipation TC = 25 °C PD

42 W Maximum Power D

issipation (PCB mount) e TA = 25 °C 2.5 Peak Diode Re covery dV/dt c dV/dt 5.0 V/ns Operating Junction and Stor age Temperature Range TJ, Tstg -55 to +150 °C Soldering R ecommendations (Peak temperature) d for 10 s 260 N-Channel 200 V (D-S) MOSFET

FEATURES

• TrenchFET ® Power MOSFET  175 °C Junctio n Temperature  PWM Optimized  100 % R g Tested  Compliant to RoHS D irective 2002/95/EC

APPLICATIONS

 Primary Side Switch www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP05N20GH-HF A ll data sheet.com

a. When mo unted on 1" square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. THERMAL RESISTANCE RATING S PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-A mbient RthJA -- 1 10 °C/WMaximum Junction-to-Ambient  (PCB mount) a RthJA -- 5 0 Maximum Junction-to-Case ( Drain) RthJC -- 3 .0 SPECIFICATIONS (TJ = 25 °C, unless othe rwise noted) PARAMETER SYMBOL TE ST CONDITIONS MIN. TYP. MAX. UNIT Static Drain- Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 200 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, I D = 1 mA - 0.29 - V/°C Ga te-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Ze ro Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V - - 25 μA VDS = 160 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-So urce On-State Resistance RDS(on) V GS = 10 V I D = 2.9 A b - 0.85  Forward Transc onductance gfs VDS = 50 V, ID = 2.9 A b 1.7 - - S Dynamic Input Capacitance C iss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 185 - pFOutput Capacitance Coss - 100 - Rever se Transfer Capacitance Crss -3 0- Total Gate Charge Qg VGS = 10 V ID = 4.8 A, VDS = 160 V, see fig. 6 and 13 b nC Gate-Source Char ge Qgs -- 3 . 0 Gate-Drain Charge Qgd -- 7 . 9 Turn-On Dela y Time td(on) VDD = 100 V, ID = 4.8 A, RG = 18 , RD = 20 , see fig. 10 b -7 . 2- nsRise Time tr -2 2- Turn-Off De lay Time td(off) -1 9 - Fall Ti me tf -1 3- Intern al Drain Inductance LD Between le ad, 6 mm (0.25") from package and center of die contact -4 . 5- nH Internal Source Inductance L S -7 . 5- Drain-Source Bod y Diode Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol showing the  inte gral reverse p - n junction diode -- 4 . 8 A Pulsed Diode Forward Current a ISM -- 1 9 Body Diod e Voltage VSD TJ = 25 °C, IS = 4.8 A, VGS = 0 V b -- 1 . 8 V Body Diode Re verse Recovery Time trr TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/μs b - 150 300 ns Body Diode Reverse Recovery Charge Q rr -0 .91 1.8 μ C Forward Turn-On Time ton Intrinsic turn-on time is negligible (tur n-on is dominated by LS and LD) D S G S D G - - 13.0 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP05N20GH-HF A ll data sheet.com

CTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typi cal Output Characteristics, TC = 150 °C Fig. 3 - Typica l Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP05N20GH-HF A ll data sheet.com

Fig. 5 - Typical Ca pacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP05N20GH-HF A ll data sheet.com

Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS RG D.U.T. 10 V VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP05N20GH-HF A ll data sheet.com

Fig. 12a - Unclam ped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit RG IAS 0.01 Ωtp D.U.T L VDS - VDD 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp QGS QGD QG VG Charge VGS D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP05N20GH-HF A ll data sheet.com

Fig. 14 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 Va ISD Driver gate drive D.U.T. lSD waveform D.U.T. VDS waveform Inductor current D = P.W. Period Peak Diode Recovery dV/dt Test Circuit VDD  dV/dt controlled by Rg  Driver same type as D.U.T.  ISD controlled by duty factor “D”  D.U.T. - device under test D.U.T. Circuit layout considerations  Low stray inductance  Ground plane  Low leakage inductance current transformer Rg Note a. VGS = 5 V for logic level devices VDD www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP05N20GH-HF A ll data sheet.com

• Dimension L3 is fo r r eference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES DIM. MI N. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP05N20GH-HF A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR DP AK (TO-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) Return to Index www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP05N20GH-HF A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP05N20GH-HF A ll data sheet.com