AP03N70P

AP03N70P ADPOW | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Dynamic dv/dt Rating BVDSS 600/650/700V ▼ ▼ ▼ ▼ Repetitive Avalanche Rated RDS(ON) 3.6Ω ▼ ▼ ▼ ▼ Fast Switching ID 3.3A ▼ ▼ ▼ ▼ Simple Drive Requirement

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W W/℃ EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy mJ TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 2.8 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W Data & specifications subject to change without notice Rating 600/650/700- /A/H AP03N70P 3.3 2.1 Storage Temperature Range -55 to 150 13.2 Linear Derating Factor 0.36 Parameter 3.3 Parameter -55 to 150 200303032 3.3 AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.TO-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC- AC converters and high current high speed switching circuits. ± 30 G D S TO-220 G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA / - 600 - - V VGS=0V, ID=1mA / A 650 - - V VGS=0V, ID=1mA / H 700 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance V GS=10V, ID=1.6A - - 3.6 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=1.6A - 2 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=- - nA Qg Total Gate Charge3 ID=3.3A - 11.4 - nC Qgs Gate-Source Charge V DS=480V - 3.1 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 4.2 - nC td(on) Turn-on Delay Time3 VDD=300V - 8.4 - ns tr Rise Time I D=3.3A - 6 - ns td(off) Turn-off Delay Time R G=10Ω,VGS=10V - 17.7 - ns tf Fall Time R D=91Ω - 5.9 - ns Ciss Input Capacitance V GS=0V - 600 - pF Coss Output Capacitance V DS=25V - 45 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 4 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V - - 3.3 A ISM Pulsed Source Current ( Body Diode )1 - - 13.2 A VSD Forward On Voltage3 Tj=25℃, IS=3.3A, VGS=0V - - 1.5 V Notes: 1.Pulse width limited by safe operating area. 2.Starting T j=25oC , VDD=50V , L=15mH , RG=25Ω , IAS=3.3A. 3.Pulse width <300us , duty cycle <2%. Ordering Code AP03N70P- X : X Denote BVDSS Grade Blank = BVDSS 600V A = BVDSS 650V H = BVDSS 700V AP03N70P ±100± 30V

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature AP03N70P 0.5 1.5 2.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G =10V I D =3.5A 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS (V) 0 5 10 15 20 25 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V G =6.0V V G =5.0V V G =4.5V V G =4.0V V G =10V 0 5 10 15 20 25 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V G =3.5V V G =4.5V V G =5.0V V G =4.0V V G =10V

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance 0 50 100 150 Tc , Case Temperature( o C) PD (W) 0.5 1.5 2.5 3.5 25 50 75 100 125 150 T c , Case Temperature ( o C ) ID , Drain Current (A) 100 1 10 100 1000 10000 V DS (V) ID (A) T c =25 o C Single Pulse 10us 100us 1ms 10ms 100ms 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP03N70P -50 0 50 100 150 T j , Junction Temperature ( o C) VGS(th) (V) 0.01 0.1 100 V SD (V) IS (A) T j = 25 o C T j = 150 o C 100 10000 1 5 9 13 17 21 25 29 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss 0 2 4 6 8 10 12 14 16 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =3.3A V DS =480V

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 0.5x RATED VDS TO THE OSCILLOSCOPE 10 V D G S VDS VGS RG RD 0.8 x RATED V DS TO THE OSCILLOSCOPE D G S VDS VGS IDIG 1~ 3 mA