DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 26
Technical content
Single stage 2.3_2.7GHz LNA with BFU730F Rev 2 — 27 October 2011 Application note Info Content Keywords BFU730F, LNA, 2.3-2.7 GHz, WiMAX, WLAN, ISM, LTE Abstract The document provides circuit, layout, BOM and performance information on 2.3-2.7 GHz LNA equipped with NXP’s BFU730F wide band transistor. This Application note is related to evaluation board OM7690/BFU730F,598 12nC 934065627598
NXP Semiconductors AN11006 2.3_2.7GHz LNA Application note Rev 2 — 27 October 2011 2 of 26 Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
Revision history
2.0 1.0 20112710 20110106 Schematic updated Initial document.
resistance, lower noise and higher cut off frequency can be achieved. The BFU730F is one of a series of transistors made in SiGe:C. intended for application where linearity is key.
- Requirements and design of the 2.3-2.7GHz GHz LNA
with two SMA connectors for input and output connection to RF test equipment. Table 1. Target spec. Target specification of the 2.3-2.7 GHz LNA. this amplifier 11 external components are used, for matching, biasing and decoupling. The LNA shown in this application note is unconditional stable 10 MHz-20 GHz.
NXP Semiconductors AN11006 2.3_2.7GHz LNA Application note Rev 2 — 27 October 2011 4 of 26 3.1 BFU730F 2.3-2.7 GHz LNA-ADS Simulation circuit Fig 1. ADS simulation circuit for 2.3-2.7 GHz LNA
NXP Semiconductors AN11006 2.3_2.7GHz LNA Application note Rev 2 — 27 October 2011 5 of 26 3.2 BFU730F 2.3-2.7 GHz LNA - ADS Gain and match simulation results Fig 2. ADS Gain and match simulation results for 2.3-2.7 GHz LNA
NXP Semiconductors AN11006 2.3_2.7GHz LNA Application note Rev 2 — 27 October 2011 6 of 26 3.3 BFU730F 2.3-2.7 GHz LNA - ADS NF simulation results Fig 3. ADS Noise Figure simulation results for 2.3-2.7 GHz LNA
NXP Semiconductors AN11006 2.3_2.7GHz LNA Application note Rev 2 — 27 October 2011 7 of 26 3.4 BFU730F 2.3-2.7 GHz LNA - ADS Stability simulation results (1) As K≥1 and Mu≥1, the LNA is unconditionally stable for the whole frequency band Fig 4. ADS stability simulation results for 2.3-2.7 GHz LNA
NXP Semiconductors AN11006 2.3_2.7GHz LNA Application note Rev 2 — 27 October 2011 8 of 26 4. Implementation
4.1 Schematic
RF_INPUT RF_OUTPUT C4 C5 C6 C7 R2 R3 Vcc GND GND BFU730F Fig 5. BFU730F 2.3-2.7 GHz LNA schematic (019aab300)
NXP Semiconductors AN11006 2.3_2.7GHz LNA Application note Rev 2 — 27 October 2011 9 of 26
4.2 Layout and assembly
Fig 6. Layout and assembly information for BFU730F 2.3-2.7 GHz LNA EVB
Table 2. Bill of materials
NXP Semiconductors AN11006 2.3_2.7GHz LNA Application note Rev 2 — 27 October 2011 11 of 26 ground plane ore through vias, or do both. The material that has been used for the EVB is FR4 using the stack shown in Fig 7 (1) Material supplier is Isola Duraver; Er=4.6-4.9 Tδ=0.02 Fig 7. PCB material stack
NXP Semiconductors AN11006 2.3_2.7GHz LNA Application note Rev 2 — 27 October 2011 12 of 26
4.4 LNA View
Fig 8. 2.3_2.7 GHz LNA
4.5 Measurement results
Table 3. Typical measurement results measured on the evaluation board. Temp=25 °C, frequency is 2.5GHz unless otherwise specified.
2.3 GHz
2.5 GHz 21 dB
NXP Semiconductors AN11006 2.3_2.7GHz LNA Application note Rev 2 — 27 October 2011 14 of 26
4.5.1 Gain and match - typical values
Fig 9. Typical Gain and match measured values
NXP Semiconductors AN11006 2.3_2.7GHz LNA Application note Rev 2 — 27 October 2011 15 of 26
4.5.2 NF and Gain- typical values
(1) NF and Gain measurements correction applied see § 5 Fig 10. Typical NF curve for values
NXP Semiconductors AN11006 2.3_2.7GHz LNA Application note Rev 2 — 27 October 2011 16 of 26
4.5.3 Stability
Fig 11. Stability typical measurement results
NXP Semiconductors AN11006 2.3_2.7GHz LNA Application note Rev 2 — 27 October 2011 17 of 26 4.5.4 1dB compression point typical values. (1) Pi1dB=-16.4 dBm Po1dB=3.7 dBm Fig 12. Typical 1 dB compression point curve.
NXP Semiconductors AN11006 2.3_2.7GHz LNA Application note Rev 2 — 27 October 2011 18 of 26
4.5.5 Linearity IP3 – typical values
Fig 13. IM3 - typical values
NXP Semiconductors AN11006 2.3_2.7GHz LNA Application note Rev 2 — 27 October 2011 19 of 26
4.5.6 Power settling time
(1) Green curve is power supply; black curve is the video out of the spectrum analyzer. Fig 14. ton Power settling time
NXP Semiconductors AN11006 2.3_2.7GHz LNA Application note Rev 2 — 27 October 2011 20 of 26 (1) Green curve is power supply; black curve is the video out of the spectrum analyzer. Fig 15. toff Power settling time 5. NF measurement corrections There are two types of errors and losses that have been taken into account to correct the NF measurement results: (1) Own system error for NF measurement and (2) insertion losses accounted to RF IN and RF OUT connectors, microstrip feed lines used at the input of the LNA in NF measurements.
5.1 NF measurement system error
A Miteq professional amplifier, rated as NF=0.41 dB, Gain=30 dB, has been used as reference for NF measurement system correction. Its manufacturer data is in Fig 16
NXP Semiconductors AN11006 2.3_2.7GHz LNA Application note Rev 2 — 27 October 2011 21 of 26 Fig 16. Miteq amp 1228664 Miteq 1228664 amplifier measured with the NF setup used to qualify the BFU730F 2.3- 2.7GHz LNA has the NF performances listed in Fig 17. The system correction factor, NFsys, is the difference between the NF measured and the 0.42 dB value from the catalog. At 2GHz this difference is about 0.3 dB and at 3 GHz around 0.15 dB.
NXP Semiconductors AN11006 2.3_2.7GHz LNA Application note Rev 2 — 27 October 2011 22 of 26 (2) NFsys= (NF in Fig 17 – NF in Fig 16) represents the NF system correction factor: average value = 0.2 dB Fig 17. Miteq 1228664 amplifier NF and Gain 5.2 Insertion losses. Insertion losses have not been taken in to account so measurements are referenced to the SMA connectors.
Error! Unknown document property name. Error! Unknown document property name. Error! Unknown document property NXP Semiconductors AN11006 2.3_2.7GHz LNA Application note Rev 2 — 27 October 2011 23 of 26 6. Legal information
6.1 Definitions
Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
6.2 Disclaimers
Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the remo val or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life -critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Evaluation products — This product is provided on an “as is” and “with all faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates and their suppliers expressly disclaim all warranties, whether express, implied or statutory, including but not limited to the implied warranties of non- infringement, merchantability and fitness for a particular purpose. The entire risk as to the quality, or arising out of the use or performance, of this product remains with customer. In no event shall NXP Semiconductors, its affiliates or their suppliers be liable to customer for any special, indirect, consequential, punitive or incidental damages (including without limitation damages for loss of business, business interruption, loss of use, loss of data or information, and the like) arising out the use of or inability to use the product, whether or not based on tort (including negligence), strict liability, breach of contract, breach of warranty or any other theory, even if advised of the poss ibility of such damages. Notwithstanding any damages that customer might incur for any reason whatsoever (including without limitation, all damages referenced above and all direct or general damages), the entire liability of NXP Semiconductors, its affiliates and their suppliers and customer’s exclusive remedy for all of the foregoing shall be limited to actual damages incurred by customer based on reasonable reliance up to the greater of the amount actually paid by customer for the product or five dollars (US$5.00). The foregoing limitations, exclusions and disclaimers shall apply to the maximum extent permitted by applicable law, even if any remedy fails of its essential purpose.
6.3 Trademarks
Notice: All referenced brands, product names, service names and trademarks are property of their respective owners.
NXP Semiconductors AN11006 2.3_2.7GHz LNA Application note Rev 2 — 27 October 2011 24 of 26 7. List of figures Fig 2. ADS Gain and match simulation results for 2.3- Fig 3. ADS Noise Figure simulation results for 2.3-2.7 GHz LNA Fig 4. ADS stability simulation results for 2.3-2.7 GHz LNA Fig 6. Layout and assembly information for BFU730F 2.3-2.7 GHz LNA EVB
Table 3. Typical measurement results measured on the
NXP Semiconductors AN11006 2.3_2.7GHz LNA Please be aware that important notices concerning this document and the product(s) described herein, have been included in the section 'Legal information'. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 October 2011 Document identifier: AN11006 9. Contents 2. Requirements and design of the 2.3-2.7GHz 3.1 BFU730F 2.3-2.7 GHz LNA-ADS Simulation 3.2 BFU730F 2.3-2.7 GHz LNA - ADS Gain and 3.3 BFU730F 2.3-2.7 GHz LNA - ADS NF simulation 3.4 BFU730F 2.3-2.7 GHz LNA - ADS Stability