AMS9491

AMS9491 ADMOS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

Advanced Monolithic Systems, Inc. 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140 Advanced AMS9491 Monolithic 1.235V VOLTAGE REFERENCE Systems FEATURES APPLICATIONS

• • ± 10 mV max. initial tolerance (A grade) •• Battery Powered Systems
• • Operating Current 10 µµA to 20mA •• Instrumentation
• • Low Voltage Reference 1.235 •• A/D, D/A Converters
• • Max. 0.6 ΩΩ Dynamic Impedance (A grade) •• Temperature measurement
• • Low Temperature Coefficient •• Current sources
• • Pagers GENERAL DESCRIPTION The AMS9491 is a two-terminal micropower band-gap voltage reference diode. It feature a very low dynamic impedance and good temperature coefficient, operating over a 10 µ A to 20mA current range. On-chip trimming is used to provide tight voltage tolerance. Since the AMS9491 is a band-gap reference, uses only transistors and resistors, low noise and good long- term stability result. Careful design of the AMS9491 has made the device exceptionally tolerant of capacitive loading, making it easy to use in almost any reference application. The wide dynamic operating range allows its use with widely varying supplies with excellent regulation. The extremely low power drain of the AMS9491 makes this reference diode useful for micropower circuitry. The AMS9491 can be used to make portable meters, regulators or general purpose analog circuitry with battery life approaching shelf life. Further more, the wide operating current allows it to replace older references with a tight tolerance part. The AMS9491 is operating over a 0 °C to 70 °C temperature range and is available in TO-92 and SO-8 packages. ORDERING INFORMATION : TOL. PACKAGE TYPE OPERATING TO-92 8 LEAD SOIC TEMPERATURE RANGE ± 10mV AMS9491AN AMS9491AS 0 to 70 ° C ± 20mV AMS9491BN AMS9491BS 0 to 70 ° C PIN CONNECTIONS TO-92 8L SOIC Plastic Package (N) SO Package (S) 1 2 7 56 N/C N/CN/C N/C N/C N/C Bottom View Top View

Advanced Monolithic Systems, Inc. 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140 AMS9491 ABSOLUTE MAXIMUM RATINGS (Note 1) Reverse Current 30mA Soldering information Forward Current 10mA TO-92 package: 10 sec. 300 °C Operating Temperature Range 0 °C to 70 °C SOIC package: Vapor phase (60 sec) 215 °C Storage temperature -55 °C to +150 °C Infrared (15 sec.) 220 °C

ELECTRICAL CHARACTERISTICS

Electrical Characteristics at I R = 100 µA, and T A = +25°C unless otherwise specified. Parameter Conditions AMS9491A AMS9491B Units Min Typ Max Min Typ Max Reverse Breakdown Voltage (Note 4) Reverse Dynamic Impedance (Note 4) I R - 100 µ A, f =20Hz 0.2 0.6 0.2 0.6 Ω Reverse Breakdown Voltage Change with current (Note 4) 10 µA ≤I R ≤1mA 1mA ≤I R ≤20mA 2.0 2.0 mV Min. Operating Current (Note 4) 8 10 8 10 µA Wide Band Noise (Note 5) I R - 100 µ A, 10Hz ≤ f ≤ 10kHz 60 60 µV Temperature Coeff. (Note 6) 50 100 ppm/°C Long Term Stability (Note 5) T A =25°C±.1°C T = 1000 Hr 20 20 ppm Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics . The guaranteed specifications apply only for the test conditions listed. Note 2: Thermal resistance is as follows: Thermal Resistance TO-92 SO-8 ϕ JA (junction to ambient) 170°C/W (0.125” leads) 165°C/W Note 3: Parameters identified with boldface type apply at temperature extremes. All other numbers apply at T A = T J = 25°C. Note 4: Guaranteed and 100% production tested. Note 5: Guaranteed but not 100% production tested. These limits are not used to calculate average outgoing quality levels. Note 6: The average temperature coefficient is defined as the maximum deviation of reference voltage at all measured temperatures between the operating T MAX and T MIN , divided by T MAX - T MIN . The measured temperatures are 0 °C, 25 °C, 70 °C.

Advanced Monolithic Systems, Inc. 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140 AMS9491 TYPICAL APPLICATIONS Wide Input Micropower Reference Reference from Range Reference from 9V Battery 1.5V Battery 4.3k LM334 OUT 1.24V AMS9491 V IN = 2.3V TO 30V AMS9491 1.2V 500k AMS9491 1.2V 1.5V 0 °°C - 100 °°C Thermometer Lower Power Thermometer 0 °°C - 100 °°C Thermometer AMS9491 150 100 220 1.5V (1.3-1.6V)† R V - V + LM334 M0-100 µA I OUT Calibration 1. Short AMS9491, adjust R3 for I OUT = temp at 1 µA/ °K 2. Remove short, adjust R2 for correct reading in °C † I Q at 1.3V ≅ 500 µA I Q at 1.6V ≅ 2.4mA LM334 M AMS9491 1.3 TO 1.6V‡ 8k TO 12k† * 2N3638 or 2N2907 select for inverse H FE ≅ 5 † Select for operation at 1.3V ‡ I Q ≅ 600 µA to 900 µA AMS9491 150 100 1.3-1.6V R V - V + LM334 M0-50 µA I OUT Calibration 1. Short AMS9491, adjust R3 for I OUT = temp at 1.8 µA/ °K 2. Remove short, adjust R2 for correct reading in °F

Advanced Monolithic Systems, Inc. 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140 AMS9491 TYPICAL APPLICATIONS (Continued) Centigrade Thermometer Micropower* 10V Reference AMS9491 V + V - R V1 V2 LM334 90k 25k 27k1.2k 2.3k OUTPUT 1mV/° C 2.2k 1.5V† Calibration 1. Adjust R1 so that V1 = temp at 1mV/ °K. 2. Adjust V2 to 273.2mV. † I Q for 1.3V to 1.6V battery voltage = 50 µA to 150 µA 150pF AMS9491 3.5M 500k 22M V IN = 15V I Q 10VLM4250C *I Q ≅ 20 µA standby current Micropower Thermocouple Cold Junction Compensator LM334 AMS9491 R1R2 ZERO ADJ 100k 5.1k 2k TC ADJ 500 METER MERCURY CELL 1.345V V + V - R THERMOCOUPLE COLD JUNCTION ISO THERMAL WITH LM334 Adjustment Procedure 1. Adjust TC ADJ pot until voltage across R1 equals Kelvin temperature multiplied by the thermocouple Seebeck coefficient. 2. Adjust ZERO ADJ pot until voltage across R2 equals the thermocouple Seebeck coefficient multiplied by 273.2. Thermocouple Seebeck R1 R2 Voltage Voltage Type Coefficient ( ΩΩ ) ( ΩΩ ) Across R1 Across R2 (mV/ °°C) @ 25 °°C (mV) (mV) J 52.3 523 1.24k 15.60 14.32 T 42.8 432 1k 12.77 11.78 K 40.8 408 953 Ω 12.17 11.17 S 6.4 63.4 150 Ω 1.908 1.766 Typical supply current 50 µA

Advanced Monolithic Systems, Inc. 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140 AMS9491 TYPICAL APPLICATIONS (Continued) Precision 1 µµA to 1mA Current Sources LM312 6 AMS9491 100k -30V -1.5V TO -27V 150pF I OUT * *I OUT =1.23V/R2 LM312 6 100k 30V 1.5V TO 27V 150pF I OUT * AMS9491

Advanced Monolithic Systems, Inc. 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140 AMS9491 TYPICAL PERFORMANCE CHARACTERISTICS 0.1 1 10 100 Reverse Characteristics OUTPUT VOLTAGE CHANGE (mV) T A =25° C 0.1 100 0.1 1 10 100 Reverse Dynamic Impedance DYNAMIC IMPEDANCE ( Ω ) 0.01 0.4 1.2 0.1 1 10 100 0.8 0.01 REVERSE CURRENT (mA) REVERSE CURRENT (mA) 0.1 100 1.4 REVERSE VOLTAGE (V) REVERSE CURRENT ( µA) Reverse Characteristics Forward Characteristics FORWARD CURRENT (mA) FORWARD VOLTAGE (V) 10 100 1k 10k 100k 0.1 Reverse Dynamic Impedance FREQUENCY (Hz) DYNAMIC IMPEDANCE ( Ω ) 10k 100 -55 5 25 45 65 85 105 1.260 1.240 125 REFERENCE VOLTAGE (V) Temperature Drift of 3 Representative Units 1.0 2.0 0 200 400 600 TIME ( µs) Response Time VOLTAGE SWING (V) 0.5 1.5 ~~~~ 200 400 600 700 100 1k 10k 100k Noise Voltage 100 500 NOISE (nV/ √Hz) I R = 100 µA FREQUENCY (Hz) 300 100 1k 10k 100k CUTOFF FREQUENCY (Hz) INTEGRATED NOISE ( µV ) TEMPERATURE (° C) 1.250 1.230 1.220 -35 -15 I R = 100 µA T A =-55° C T A =125° C T A =125° C T A =-55° C T A =25° C T A =-55° C T A =25° C T A =125° C T A =25° C I R = 100 µA T A =-55° C T A =25° C T A =125° C I R = 100 µA 100 µA OUTPUT AMS9491 OUTPUT 100k INPUT OUTPUT INPUT SINGLE POLE LOW PASS SHARP CUTOFF FILTER Filtered Output Noise 0.01

Advanced Monolithic Systems, Inc. 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140 AMS9491 PACKAGE DIMENSIONS inches (millimeters) unless otherwise noted.

3 LEAD TO-92 PLASTIC PACKAGE (N)

8 LEAD SOIC PLASTIC PACKAGE (S)

0.140±0.010 (3.556±0.127) 0.060±0.010 (1.524±0.254) 0.015±0.002 (1.270±0.127) 0.060±0.005 (1.524±0.127) DIA 0.180±0.005 (4.572±0.127) 0.180±0.005 (4.572±0.127) 0.050 (1.270) MAX 0.500 (12.70) MIN UNCONTROLLED LEAD DIMENSIONS 10° NOM5° NOM N (TO-92 ) AMS DRW# 042391 0.90 (2.286) NOM 0°-8° TYP 0.010-0.020 (0.254-0.508) S (SO-8 ) AMS DRW# 042293 x 45° 0.016-0.050 (0.406-1.270) 0.008-0.010 (0.203-0.254) 0.004-0.010 (0.101-0.254) 0.014-0.019 (0.355-0.483) 0.053-0.069 (1.346-1.752) 0.050 (1.270) TYP 0.150-0.157** (3.810-3.988) 0.228-0.244 (5.791-6.197) 0.189-0.197* (4.801-5.004) *DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE **DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE 1 2 3 4 8 7 6 5