AMS6006 KEXIN | Alldatasheet

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www.kexin.com.cn 1 MOSF ET N-Channel MOSFET AMS6006 (KMS6006) ■ Features

  • VDS (V) = 60V
  • ID = 6.3 A (VGS = 10V)
  • RDS(ON) ＜ 18mΩ (VGS = 10V)
  • RDS(ON) ＜ 20mΩ (VGS = 4.5V)
  • Super Low Gate Charge SOP-8 0.21 +0.04 -0.02 1.50 0.15 ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit VDS 60 VGS ±20 Ta=25℃ 6.3 Ta=70℃ 5 IDM 32 IAS 28 Power Dissipation (Note.3) Ta=25℃ PD 1.5 W EAS 67 mJ RthJA 85 RthJC 25 TJ 150 Tstg -55 to 150 Avalanche Current A Single Pulse Avalanche Energy (Note 4) Junction Temperature Storage Temperature Range ℃/W Thermal Resistance.Junction- to-Ambient (Note.1) Thermal Resistance.Junction- to-Case (Note.1) V Pulsed Drain Current (Note.2) Parameter Continuous Drain Current (Note.1) ID Drain-Source Voltage Gate-Source Voltage Note.1: The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. Note.2: The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% Note.3: The power dissipation is limited by 150°C junction temperature Note.4: The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=28A

1 Source

2 Source

3 Source

4 Gate

5 Drain

6 Drain

7 Drain

8 Drain

www.kexin.com.cn2 MOSFET N-Channel MOSFET AMS6006 (KMS6006) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 60 V VDS=48V, VGS=0V, TJ=25℃ 1 VDS=48V, VGS=0V, TJ=55℃ 5 Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA 1.2 2.5 V VGS=10V, ID=6A (Note.1) 18 VGS=4.5V, ID=4A (Note.1) 20 Forward Transconductance gFS VDS=5V, ID=6A 40 S Input Capacitance Ciss 3392 Output Capacitance Coss 203 Reverse Transfer Capacitance Crss 136 Gate Resistance Rg VGS=0V, VDS=0V, f=1MHz 3.4 Ω Total Gate Charge Qg 26.3 Gate Source Charge Qgs 10.8 Gate Drain Charge Qgd 8.7 Turn-On DelayTime td(on) 15.2 Turn-On Rise Time tr 15 Turn-Off DelayTime td(off) 94 Turn-Off Fall Time tf 8 Body Diode Reverse Recovery Time trr 15 Body Diode Reverse Recovery Charge Qrr 10.4 nC Single Pulse Avalanche Energy EAS VDD=25V , L=0.1mH ,IAS=15A 19 mJ Continuous Source Current IS 6.3 Pulsed Source Current (Note.1) ISM 32 Diode Forward Voltage VSD IS=6A,VGS=0V,TJ=25℃ (Note.1) 1 V Zero Gate Voltage Drain Current IDSS uA mΩRDS(On) Static Drain-Source On-Resistance A VGS=0V, VDS=15V, f=1MHz VGS=4.5V, VDS=48V, ID=6A IF= 6A, dI/dt= 100A/μs,TJ=25℃ VG=VD=0V , Force Current pF nC ns VGS=10V, VDS=30V, ID=6A,RG=3.3Ω Note.1: The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

www.kexin.com.cn 3 MOSF ET N-Channel MOSFET AMS6006 (KMS6006) ■ Typical Characterisitics 4 6 8 10 VGS (V) RDSON (mΩ) ID=12A Fig.1 Typical Output Characteristics Fig.2 On -Resistance vs. Gate -Source 0.2 0.4 0.6 0.8 1 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ Fig.3 Forward Characteristics of Reverse Fig.4 Gate -Charge Characteristics 0.5 1.5 -50 0 50 100 150 TJ ,Junction Temperature ( ℃) Normalized VGS(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature (℃) ecnatsiseR nO dezilamroN Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

www.kexin.com.cn4 MOSF ET N-Channel MOSFET AMS6006 (KMS6006) ■ Typical Characterisitics 100 1000 10000 1 5 9 13 17 21 25 VDS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 0.01 0.1 1 10 100 VDS (V) ID (A) TA=25oC Single Pulse 100ms 100us 1ms 10ms DC Fig.7 Capacitance Fig.8 Safe Operating Area 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON /T TJpeak = TC+PDMXRθJC TON T Fig.9 Normalized Maximum Transient Thermal Impedance Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform