AMS5010 ADMOS | Alldatasheet
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Advanced Monolithic Systems, Inc. 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140 Advanced AMS5010 Monolithic 1.2V VOLTAGE REFERENCE Systems FEATURES APPLICATIONS
- • Low Temperature Coefficient •• Battery Powered Systems
- •Wide Operating Current Range: 50 µµA to 5mA •• Instrumentation
- • Low Output Impedance: 0.6 ΩΩ Typ. •• A/D, D/A Converters
- • Superior Replacement for Other 1.2V References •• Monitors/ VCR/ TV
- • No Frequency Compensation Required •• Current sources
- • Low Cost GENERAL DESCRIPTION The AMS5010 is a two-terminal band-gap voltage reference diode, which provides a fixed 1.22V output voltage. This device features a low output impedance and low temperature coefficient, operating over a 50 µ A to 5mA current range. The AMS5010 is ideal for usage in battery power instrument application as well as a reference for CMOS A/D converters. The AMS5010NT, MT, LN, HN, GH grades are specified operational over a temperature range of 0 °C to 70 °C while AMS5010LT, KT, JT grades are rated over the full -55 °C to +125 °C temperature range. The AMS5010 is available in TO-92 and TO-52 (metal can) packages. ORDERING INFORMATION: MAX. PACKAGE TYPE OPERATING TEMPCO TO-92 TO-52 TEMPERATURE RANGE 5ppm/ °C - AMS5010NT 0 °C to 70 °C 10ppm/ °C - AMS5010MT 0 °C to 70 °C 25ppm °C AMS5010LN - 0 °C to 70 °C 50ppm/ °C AMS5010HN - 0 °C to 70 °C 100ppm °C AMS5010GN - 0 °C to 70 °C 25ppm/ °C - AMS5010LT -55 °C to +125 °C 50ppm/ °C - AMS5010KT -55 °C to +125 °C 100ppm °C - AMS5010JT -55 °C to +125 °C PIN CONNECTIONS TO-92 Plastic Package (N) TO-52 Metal Can Package (T) Bottom View Bottom View + -
Advanced Monolithic Systems, Inc. 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140 AMS5010 ABSOLUTE MAXIMUM RATINGS Reverse Current 10mA Storage Temperature TO-92 package -65 °C to +150 °C Forward Current 10mA Storage Temperature TO-52 package -65 °C to +200 °C Operating Temperature Range Lead Temperature (Soldering 10 sec.) 260 °C NT, MT, LN, HN, GN 0 °C to 70 °C Maximum Power Dissipation (at 25 °C ) LT, KT, JT -55 °C to +125 °C TO-52 750mW TO-92 600mW
ELECTRICAL CHARACTERISTICS
Electrical Characteristics at I R = 500 µA, and T A = +25°C unless otherwise specified. Parameter Conditions AMS5010 Min Typ Max Units Reference Voltage I R = 100 µ A 1.20 1.220 1.25 V Reference Current (Note 3) 50 100 5000 µA Reverse Current To rated specs. 50 100 µA Dynamic Output Impedance I R = 100 µ A I R = 500 µ A .6 2 Ω Ω RMS Noise Voltage (Note 4) I R = 500 µ A, 10Hz ≤ f ≤ 10kHz 5 µV Temperature Coefficient (Note 5) AMS5010G – J AMS5010H – K AMS5010L AMS5010M AMS501N 50 µA ≤ I R ≤ 5mA T MIN ≤ T A ≤ T MAX 100 ppm/°C ppm/°C ppm/°C ppm/°C ppm/°C Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics . The guaranteed specifications apply only for the test conditions listed. Note 2: For elevated temperature operation, T j max is ≤+150°C Thermal Resistance TO-92 TO-52 ϕ JA (junction to ambient) 170°C/W (0.125” leads) 140°C/W Note 3: Optimum performance is obtained at currents below 500 µA. For current operation below 200 µA, stray shunt capacitances should be limited to 20pF or increased to 1 µF. If strays can not be avoided, a shunt capacitor of at least 1000pF is recommended. Note 4: Guaranteed but not 100% production tested. These limits are not used to calculate average outgoing quality levels. Note 5: The average temperature coefficient is defined as the maximum deviation of reference voltage at all measured temperatures between the operating T MAX and T MIN , divided by T MAX - T MIN .