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Thyristor-Thyristor Modules Type AMS-IRKT250/08 AMS-IRKT250/12 AMS-IRKT250/14 AMS-IRKT250/16 AMS-IRKT250/18 V RRM VDRM V 800 1200 1400 1600 1800 V RSM VDSM V 900 1300 1500 1700 1900 Symbol Test Conditions Maximum Ratings Unit TVJ=TVJM TC=85oC; 180o sine 400 253 A TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 8500 9000 7000 8000 AI TSM, IFSM TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 405000 336000 320000 240000 A 2s i2dt (di/dt)cr 250 800 A/us (dv/dt)cr TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us PGM TVJ=TVJM tp=30us IT=ITAVM tp=500us 120 60 W PGAV 20 W ITRMS, IFRMS ITAVM, IFAVM oC TVJ TVJM Tstg -40...+140 140 -40...+130 VISOL 50/60Hz, RMS t=1min IISOL<1mA t=1s 3000 3600 V~ Md Mounting torque Terminal connection torque 2.5-5/22-44 12-15/106-132 Nm/lb.in. Weight 430 g TVJ=TVJM repetitive, IT=750A f=50Hz, tp=200us VD=2/3VDRM IG=1A non repetitive, IT=250A diG/dt=1A/us VRGM 10 V Typical including screws American Microsemiconductor Inc. 133 Kings Road, Madison, New Jersey 07940 tel. 973-377-9566 fax. 973-377-3078 www.americanmicrosemi.com
Thyristor-Thyristor Modules Symbol Test Conditions Characteristic Values Unit IRRM TVJ=TVJM; VR=VRRM; VD=VDRM 70 mA
FEATURES
- International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ ADVANTAGES * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits
APPLICATIONS
- Motor control * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Contactless switches mA IDRM 40 VVT, VF IT, IF=750A; TVJ=25oC 1.7 VTO For power-loss calculations only (TVJ=140oC) 0.85 V rT 1.1 m VD=6V; TVJ=25oC TVJ=-40oCVGT 3 V VD=6V; TVJ=25oC TVJ=-40oCIGT 150 200 mA VGD TVJ=TVJM; VD=2/3VDRM 0.25 V IGD 10 mA IH TVJ=25oC; VD=6V; RGK= 150 mA TVJ=25oC; tp=30us; VD=6V IG=0.45A; diG/dt=0.45A/us 300 mAIL per thyristor/diode; DC current per moduleRthJC 0.129
0.0645 K/W
per thyristor/diode; DC current per moduleRthJK 0.169
0.0845 K/W
dS Creeping distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 TVJ=25oC; VD=1/2VDRM IG=1A; diG/dt=1A/ustgd 2 us TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us typ. VR=100V; dv/dt=50V/us; VD=2/3VDRMtq 200 us uCQS TVJ=125oC; IT, IF=400A; -di/dt=50A/us 760 IRM 275 A