AMP03GSZ AD | Alldatasheet
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REV. F Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © 2003 Analog Devices, Inc. All rights reserved. a AMP03 Precision, Unity-Gain Differential Amplifier
FEATURES
High CMRR: 100 dB Typ Low Nonlinearity: 0.001% Max Low Distortion: 0.001% Typ Wide Bandwidth: 3 MHz Typ Fast Slew Rate: 9.5 V/ /H9262s Typ Fast Settling (0.01%): 1 /H9262s Typ Low Cost
APPLICATIONS
Instrumentation Amplifiers Balanced Line Receivers Current-Voltage Conversion Absolute Value Amplifier 4t o 20 mA Current Transmitter Precision Voltage Reference Applications Lower Cost and Higher Speed Version of INA105 GENERAL DESCRIPTION The AMP03 is a monolithic unity-gain, high speed differential amplifier. Incorporating a matched thin film resistor network, the AMP03 features stable operation over temperature without requiring expensive external matched components. The AMP03 is a basic analog building block for differential amplifier and instrumentation applications. The differential amplifier topology of the AMP03 both amplifies the difference between two signals and provides extremely high rejection of the common-mode input voltage. By providing common-mode rejection (CMR) of 100 dB typical, the AMP03 solves common problems encountered in instrumentation design. As an example, the AMP03 is ideal for performing either addi- tion or subtraction of two signals without using expensive externally m atched precision resistors. The large common- mode rejection is made possible by matching the internal resistors to better than 0.002% and maintaining a thermally symmetric layout. Additionally, due to high CMR over frequency, the AMP03 is an ideal general amplifier for buffering signals in a noisy environment into data acquisition systems. The AMP03 is a higher speed alternative to the INA105. Featuring slew rates of 9.5 V/ µs and a bandwidth of 3 MHz, the AMP03 offers superior performance to the INA105 for high speed current sources, absolute value amplifiers, and summing amplifiers. FUNCTIONAL BLOCK DIAGRAM –IN +IN SENSE +VCC OUTPUT –VEE REFERENCE 25k/H9024 25k/H9024 25k/H9024 25k/H9024 AMP03 PIN CONNECTIONS 8-Lead PDIP (P Suffix) TOP VIEW (Not to Scale) NC = NO CONNECT AMP03 REFERENCE SENSE OUTPUT NC –IN +IN 8-Lead SOIC (S Suffix) TOP VIEW (Not to Scale) NC = NO CONNECT AMP03 REFERENCE SENSE OUTPUT NC –IN +IN Header (J Suffix) REFERENCE 1 –IN 2 +IN 3 7 V+
6 OUTPUT
5 SENSE
NC = NO CONNECT
–2– REV. F AMP03–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Unit Offset Voltage V OS VCM = 0 V –400 +10 +400 –700 +20 +700 –750 +25 +750 µV Gain Error No Load, V IN = ± 10 V, Input Voltage Range IVR (Note 1) ± 20 ± 20 ± 20 V Common-Mode Rejection CMR V CM = ± 10 V 85 100 80 95 80 95 dB Power Supply Rejection Ratio PSRR V S = ± 6 V to ± 18 V 0.6 10 0.6 10 0.7 10 µV/V Output Swing V O RL = 2 kΩ± 12 ± 13.7 ± 12 ± 13.7 ± 12 ± 13.7 V Short-Circuit Current Limit I SC Output Shorted to Ground +45/–15 +45/–15 +45/–15 mA Small-Signal Bandwidth (–3 dB) BW R L = 2 kΩ 33 3 MHz Slew Rate SR R L = 2 kΩ 6 9.5 6 9.5 6 9.5 V/ µs Capacitive Load Drive Capability C L No Oscillation 300 300 300 pF NOTES 1Input voltage range guaranteed by CMR test. Specifications subject to change without notice. Parameter Symbol Conditions Min Typ Max Unit Offset Voltage V OS VCM = 0 V –1500 +150 +1500 µV Gain Error No Load, V IN = ± 10 V, RS = 0 Ω 0.0014 0.02 % Input Voltage Range IVR ± 20 V Common-Mode Rejection CMR V CM = ± 10 V 75 95 dB Power Supply Rejection Ratio PSRR V S = ± 6 V to ± 18 V 0.7 20 µV/V Output Swing V O RL = 2 kΩ± 12 ± 13.7 V Slew Rate SR R L = 2 kΩ 9.5 V/ µs Supply Current I SY No Load 3.0 4.0 mA Specifications subject to change without notice. Parameter Symbol Conditions Min Typ Max Min Typ Max Unit Offset Voltage V OS VCM = 0 V –1000 +100 +1000 –2000 +200 +2000 µV Gain Error No Load, V IN = ± 10 V, RS = 0 Ω 0.0008 0.015 0.002 0.02 % Input Voltage Range IVR ± 20 ± 20 V Common-Mode Rejection CMR V CM = ± 10 V 80 95 7 59 0 d B Power Supply Rejection Ratio PSRR V S = ± 6 V to ± 18 V 0.7 15 1.0 15 µV/V Output Swing V O RL = 2 kΩ± 12 ± 13.7 ± 12 ± 13.7 V Slew Rate SR R L = 2 kΩ 9.5 9.5 V/ µs Supply Current I SY No Load 2.6 4.0 2.6 4.0 mA Specifications subject to change without notice. (@ VS = /H1155015 V, TA = +25/H11543C, unless otherwise noted.) (@ VS = /H1155015 V, –55 /H11543C ≤ TA ≤ +125/H11543C for B Grade) (@ VS = /H1155015 V, –40 /H11543C ≤ TA ≤ +85/H11543C for F and G Grades)
–3–REV. F AMP03 WAFER TEST LIMITS (@ VS = /H1155015 V, TA = 25/H11543C, unless otherwise noted.) * AMP03GBC Parameter Symbol Conditions Limit Unit Offset Voltage V OS VS = ±18 V 0.5 mV max Gain Error No Load, V IN = ±10 V, RS = 0 Ω 0.008 % max Input Voltage Range IVR ±10 V min Common-Mode Rejection CMR V CM = ±10 V 80 dB min Power Supply Rejection Ratio PSRR V S = ±6 V to ±18 V 8 µV/V max Output Swing V O RL = 2 kΩ± 12 V max Short-Circuit Current Limit I SC Output Shorted to Ground +45/–15 mA min Supply Current I SY No Load 3.5 mA max *Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot asse mbly and testing. ABSOLUTE MAXIMUM RATINGS 1 Storage Temperature Range Operating Temperature Range Package Type /H9258JA 3 /H9258JC Unit Header (J) 150 18 °C/W 8-Lead PDIP (P) 103 43 °C/W 8-Lead SOIC (S) 155 40 °C/W NOTES 1Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted. 2For supply voltages less than ± 18 V, the absolute maximum input voltage is equal to the supply voltage. 3θJA is specified for worst-case mounting conditions, i.e., θJA is specified for device in socket for header and PDIP packages and for device soldered to printed circuit board for SOIC package. ORDERING GUIDE Temperature Package Package Model1 Range Description Option 2 AMP03GP –40 °C to +85°C8 - L ead PDIP P-8 AMP03BJ –40 °C to +85°CH eader H-08B AMP03FJ –40 °C to +85°CH eader H-08B AMP03BJ/883C –55 °C to +125°CH eader H-08B AMP03GS –40 °C to +85°C8 - L ead SOIC S-8 AMP03GS-REEL –40 °C to +85°C8 - L ead SOIC S-8 5962-9563901MGA –55 °C to +125°CH eader H-08B AMP03GBC Die NOTES 1Burn-in is available on commercial and industrial temperature range parts in PDIP and header packages. 2Consult factory for /883 data sheet. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AMP03 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. DICE CHARACTERISTICS 1. REFERENCE 2. –IN 3. +IN 4. –V EE 5. SENSE 6. OUTPUT 7. +V CC 8. NC DIE SIZE 0.076 inch /H11547 0.076 inch, 5,776 sq. mm (1.93 mm /H11547 1.93 mm, 3.73 sq. mm) BURN-IN CIRCUIT AMP03 +18V –18V 25k/H902425k/H9024 25k/H9024 SLEW RATE TEST CIRCUIT AMP03 +15V –15V 0.1/H9262F 0.1/H9262F VIN = /H1155010V VOUT = /H1155010V WARNING! ESD SENSITIVE DEVICE
AMP03–Typical Performance Characteristics –4– REV. F TPC 1. Small Signal Transient Response TPC 4. Large Signal Transient Response INPUT OFFSET VOLTAGE (/H9262V) 1000 800 –800 –200 –400 –600 600 200 400 TEMPERATURE (/H11543C) –75 –50 150–25 0 25 75 100 12550 VS = /H1155015V TPC 7. Input Offset Voltage vs. Temperature FREQUENCY (Hz) COMMON-MODE REJECTION (dB) 120 11 0 1 M 100 1k 10k 100k 110 100 TA = +25/H11543C VS = /H1155015V TPC 2. Common-Mode Rejection vs. Frequency FREQUENCY (Hz) POWER SUPPLY REJECTION (dB) 120 11 0 1 M 100 1k 10k 100k 110 100 TA = +25/H11543C VS = /H1155015V –PSRR +PSRR TPC 5. Power Supply Rejection vs. Frequency FREQUENCY (Hz) CLOSED-LOOP GAIN (dB) –30 100 1k 10M 10k 100k 1M –10 –20 TA = +25°C VS = /H1155015V TPC 8. Closed-Loop Gain vs. Frequency FREQUENCY (Hz) THD+N (%) 0.1 0.010 0.0001 20 100 20k 0.001 1k 10k TA = +25/H11543C VS = /H1155015V AV = –1 RL = 600/H9024 RL = 100k/H9024 TPC 3. Total Harmonic Distortion vs. Frequency FREQUENCY (Hz) 0.1 0.010 0.0001 2k 50k 0.001 10k DIM (%) TA = +25/H11543C VS = /H1155015V AV = –1 RL = 600/H9024, 100k/H9024 TPC 6. Dynamic Intermodulation Distortion vs. Frequency FREQUENCY (Hz) OUTPUT IMPEDANCE (/H9024) 100 1k 1M 10k 100k TA = +25°C VS = /H1155015V TPC 9. Closed-Loop Output Impedance vs. Frequency
–5–REV. F TEMPERATURE (/H11543C) GAIN ERROR (%) 0.003 –75 –50 100–25 0 25 5 07 5 0.002 0.000 –0.001 –0.002 –0.003 0.001 125 150 VS = /H1155015V RS = 0/H9024 TPC 10. Gain Error vs. Temperature SUPPLY VOLTAGE (V) SUPPLY CURRENT (mA) 0 /H115505 /H1155020/H1155010 /H1155015 TA = +25/H11543C TPC 13. Supply Current vs. Supply Voltage FREQUENCY (Hz) 120 100 11 0 10k100 1k TA = +25/H11543C VS = /H1155015V Hz)VOLTAGE NOISE DENSITY (nV/ TPC 16. Voltage Noise Density vs. Frequency +10/H9262V –10/H9262V NOTE: EXTERNAL AMPLIFIER GAIN = 1000; THEREFORE, VERTICAL SCALE = 10/H9262V/DIV. TPC 19. Voltage Noise from 0 kHz to 10 kHz TEMPERATURE (/H11543C) SLEW RATE (V//H9262s) –75 –50 125–25 0 25 50 75 100 VS = /H1155015V RL = 2k/H9024 TPC 11. Slew Rate vs. Temperature OUTPUT SOURCE CURRENT (mA) 17.5 06 3 6 12 18 24 30 15.0 12.5 10.0 5.0 2.5 7.5 MAXIMUM OUTPUT VOLTAGE (V) TA = +25/H11543C VS = /H1155018V VS = /H1155015V VS = /H1155012V VS = /H115509V VS = /H115505V TPC 14. Maximum Output Voltage vs. Output Current (Source) +1/H9262V –1/H9262V
0.1 TO 10Hz PEAK-TO-PEAK NOISE
TPC 17. Low Frequency Voltage Noise TEMPERATURE (/H11543C) SUPPLY CURRENT (mA) –75 –50 125–25 0 25 50 75 100 150 VS = /H1155015V TPC 12. Supply Current vs. Temperature OUTPUT SINK CURRENT (mA) –17.5 –15.0 –12.5 –10.0 –5.0 –2.5 –7.5 MAXIMUM OUTPUT VOLTAGE (V) TA = +25/H11543C VS = /H1155018V VS = /H1155015V VS = /H1155012V VS = /H115509V VS = /H115505V TPC 15. Maximum Output Voltage vs. Output Current (Sink) +10/H9262V –10/H9262V NOTE: EXTERNAL AMPLIFIER GAIN = 1000; THEREFORE, VERTICAL SCALE = 10/H9262V/DIV. TPC 18. Voltage Noise from 0 kHz to 1 kHz
–8– REV. F OUTLINE DIMENSIONS C00249–0–12/03(F)
Revision History
12/03—Data Sheet changed from REV. E to REV. F. 8-Lead Plastic Dual In-Line Package [PDIP] [P Suffix] (N-8) Dimensions shown in inches and (millimeters) SEATING PLANE 0.180 (4.57) MAX 0.150 (3.81) 0.130 (3.30) 0.110 (2.79) 0.060 (1.52) 0.050 (1.27) 0.045 (1.14) 1 4 5 0.295 (7.49) 0.285 (7.24) 0.275 (6.98) 0.100 (2.54) BSC 0.375 (9.53) 0.365 (9.27) 0.355 (9.02) 0.150 (3.81) 0.135 (3.43) 0.120 (3.05) 0.015 (0.38) 0.010 (0.25) 0.008 (0.20) 0.325 (8.26) 0.310 (7.87) 0.300 (7.62) 0.022 (0.56) 0.018 (0.46) 0.014 (0.36) CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN COMPLIANT TO JEDEC STANDARDS MO-095AA 0.015 (0.38) MIN 8-Lead Small Outline Package [SOIC] [S Suffix] (R-8) Dimensions shown in millimeters and (inches) 0.25 (0.0098) 0.17 (0.0067) 1.27 (0.0500) 0.40 (0.0157) 0.50 (0.0196) 0.25 (0.0099) /H11547 45/H11543 8/H11543 0/H11543 1.75 (0.0688) 1.35 (0.0532) SEATING PLANE 0.25 (0.0098) 0.10 (0.0040) 5.00 (0.1968) 4.80 (0.1890) 4.00 (0.1574) 3.80 (0.1497) 1.27 (0.0500) BSC 6.20 (0.2440) 5.80 (0.2284) 0.51 (0.0201) 0.31 (0.0122)COPLANARITY 0.10 CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN COMPLIANT TO JEDEC STANDARDS MS-012AA 8-Lead Metal Can [TO-99] [J Suffix] (H-08B) Dimensions shown in inches and (millimeters) 0.2500 (6.35) MIN 0.5000 (12.70) MIN0.1850 (4.70) 0.1650 (4.19) REFERENCE PLANE 0.0500 (1.27) MAX 0.0190 (0.48) 0.0160 (0.41) 0.0210 (0.53) 0.0160 (0.41) 0.0400 (1.02) 0.0100 (0.25) 0.0400 (1.02) MAX BASE & SEATING PLANE 0.0340 (0.86) 0.0280 (0.71) 0.0450 (1.14) 0.0270 (0.69) 0.1600 (4.06) 0.1400 (3.56) 0.1000 (2.54) BSC 2 8 0.2000 (5.08) BSC 0.1000 (2.54) BSC
45 BSC
0.3700 (9.40) 0.3350 (8.51) 0.3350 (8.51) 0.3050 (7.75) CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETERS DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN COMPLIANT TO JEDEC STANDARDS MO-002AK