AMP03BJ

AMP03 AD | Alldatasheet

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REV. E Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. a AMP03 Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1999 Precision, Unity-Gain Differential Amplifier

FEATURES

High CMRR: 100 dB Typ Low Nonlinearity: 0.001% Max Low Distortion: 0.001% Typ Wide Bandwidth: 3 MHz Typ Fast Slew Rate: 9.5 V/ ms Typ Fast Settling (0.01%): 1 ms Typ Low Cost

APPLICATIONS

Instrumentation Amplifiers Balanced Line Receivers Current-Voltage Conversion Absolute Value Amplifier 4 mA–20 mA Current Transmitter Precision Voltage Reference Applications Lower Cost and Higher Speed Version of INA105 GENERAL DESCRIPTION The AMP03 is a monolithic unity-gain, high speed differential amplifier. Incorporating a matched thin-film resistor network, the AMP03 features stable operation over temperature without requiring expensive external matched components. The AMP03 is a basic analog building block for differential amplifier and instrumentation applications. The differential amplifier topology of the AMP03 serves to both amplify the difference between two signals and provide extremely high rejection of the common-mode input voltage. By providing common-mode rejection (CMR) of 100 dB typical, the AMP03 solves common problems encountered in instrumentation design. As an example, the AMP03 is ideal for performing either addi- tion or subtraction of two signals without using expensive externally -matched precision resistors. The large common- mode rejection is made possible by matching the internal resistors to better than 0.002% and maintaining a thermally symmetric layout. Additionally, due to high CMR over frequency, the AMP03 is an ideal general amplifier for buffering signals in a noisy environment into data acquisition systems. The AMP03 is a higher speed alternative to the INA105. Fea- turing slew rates of 9.5 V/ µs, and a bandwidth of 3 MHz, the AMP03 offers superior performance for high speed current sources, absolute value amplifiers and summing amplifiers than the INA105. FUNCTIONAL BLOCK DIAGRAM –IN +IN SENSE +VCC OUTPUT –VEE REFERENCE 25kV 25kV 25kV 25kV AMP03 PIN CONNECTIONS 8-Lead Plastic DIP (P Suffix) TOP VIEW (Not to Scale) NC = NO CONNECT AMP03 REFERENCE SENSE OUTPUT NC –IN +IN 8-Lead SOIC (S Suffix) TOP VIEW (Not to Scale) NC = NO CONNECT AMP03 REFERENCE SENSE OUTPUT NC –IN +IN Header (J Suffix) REFERENCE 1 –IN 2 +IN 3 7 V+

6 OUTPUT

5 SENSE

NC = NO CONNECT

–2– REV. E AMP03–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Units Offset Voltage V OS VCM = 0 V –400 10 400 –700 20 700 –750 25 750 µV Gain Error No Load, V IN = ± 10 V, Input Voltage Range IVR (Note 1) ± 10 ± 10 ± 10 V Common-Mode Rejection CMR V CM = ± 10 V 85 100 80 95 80 95 dB Power Supply Rejection Ratio PSRR V S = ± 6 V to ± 18 V 0.6 10 0.6 10 0.7 10 µV/V Output Swing V O RL = 2 kΩ± 12 ± 13.7 ± 12 ± 13.7 ± 12 ± 13.7 V Short-Circuit Current Limit I SC Output Shorted to Ground +45/–15 +45/–15 +45/–15 mA Small-Signal Bandwidth (–3 dB) BW R L = 2 kΩ 3 3 3 MHz Slew Rate SR R L = 2 kΩ 6 9.5 6 9.5 6 9.5 V/ µs Capacitive Load Drive Capability C L No Oscillation 300 300 300 pF NOTES 1Input voltage range guaranteed by CMR test. Specifications subject to change without notice. Parameter Symbol Conditions Min Typ Max Units Offset Voltage V OS VCM = 0 V –1500 150 1500 µV Gain Error No Load, V IN = ± 10 V, RS = 0 Ω 0.0014 0.02 % Input Voltage Range IVR ± 20 V Common-Mode Rejection CMR V CM = ± 10 V 75 95 dB Power Supply Rejection Ratio PSRR V S = ± 6 V to ± 18 V 0.7 20 µV/V Output Swing V O RL = 2 kΩ± 12 ± 13.7 V Slew Rate SR R L = 2 kΩ 9.5 V/ µs Supply Current I SY No Load 3.0 4.0 mA Specifications subject to change without notice. Parameter Symbol Conditions Min Typ Max Min Typ Max Units Offset Voltage V OS VCM = 0 V –1000 100 1000 –2000 200 2000 µV Gain Error No Load, V IN = ± 10 V, RS = 0 Ω 0.0008 0.015 0.002 0.02 % Input Voltage Range IVR ± 20 ± 20 V Common-Mode Rejection CMR V CM = ± 1 0 V 8 09 5 7 59 0 d B Power Supply Rejection Ratio PSRR V S = ± 6 V to ± 18 V 0.7 15 1.0 15 µV/V Output Swing V O RL = 2 kΩ± 12 ± 13.7 ± 12 ± 13.7 V Slew Rate SR R L = 2 kΩ 9.5 9.5 V/ µs Supply Current I SY No Load 2.6 4.0 2.6 4.0 mA Specifications subject to change without notice. (@ VS = 615 V, TA = +258C, unless otherwise noted) (@ VS = 615 V, –55 8C ≤ TA ≤ +1258C for B Grade) (@ VS = 615 V, –40 8C ≤ TA ≤ +858C for F and G Grades)

–3–REV. E WAFER TEST LIMITS (@ VS = 615 V, TA = +258C, unless otherwise noted) AMP03BC Parameter Symbol Conditions Limit Units Offset Voltage V OS VS = ± 18 V 0.5 mV max Gain Error No Load, V IN = ± 10 V, RS = 0 Ω 0.008 % max Input Voltage Range IVR ± 10 V min Common-Mode Rejection CMR V CM = ± 10 V 80 dB min Power Supply Rejection Ratio PSRR V S = ± 6 V to ± 18 V 8 µV/V max Output Swing V O RL = 2 kΩ± 12 V max Short-Circuit Current Limit I SC Output Shorted to Ground +45/–15 mA min Supply Current I SY No Load 3.5 mA max Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot asse mbly and testing. ABSOLUTE MAXIMUM RATINGS 1 Storage Temperature Range Operating Temperature Range Package Type uJA 3 uJC Units Header (J) 150 18 °C/W 8-Lead Plastic DIP (P) 103 43 °C/W 8-Lead SOIC (S) 155 40 °C/W NOTES 1Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted. 2For supply voltages less than ± 18 V, the absolute maximum input voltage is equal to the supply voltage. 3qJA is specified for worst case mounting conditions, i.e., qJA is specified for device in socket for header and plastic DIP packages and for device soldered to printed circuit board for SOIC package. ORDERING GUIDE1 Temperature Package Package Model Range Description Option 2 AMP03GP –40 °C to +85°C 8-Lead Plastic DIP N-8 AMP03BJ –40 °C to +85°C Header H-08B AMP03FJ –40 °C to +85°C Header H-08B AMP03BJ/883C –55 °C to +125°C Header H-08B AMP03GS –40 °C to +85°C 8-Lead SOIC SO-8 AMP03GS-REEL –40 °C to +85°C 8-Lead SOIC SO-8 5962-9563901MGA –55 °C to +125°C Header H-08B AMP03GBC Die NOTES 1Burn-in is available on commercial and industrial temperature range parts in plastic DIP and header packages. 2For devices processed in total compliance to MIL-STD-883, add /883 after part number. Consult factory for /883 data sheet. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AMP03 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. DICE CHARACTERISTICS 1. Reference 2. –IN 3. +IN 4. V– 5. SENSE 6. OUTPUT 7. V+ 8. NC DIE SIZE 0.076 3 0.076 inch, 5,776 sq. mils (1.93 3 1.93 mm, 3.73 sq. mm) BURN-IN CIRCUIT AMP03 +18V –18V 25kV25kV 25kV SLEW RATE TEST CIRCUIT AMP03 +15V –15V 0.1mF 0.1mF VIN = 610V VOUT = 610V WARNING! ESD SENSITIVE DEVICE

Figure 10. Gain Error vs. Temperature Figure 13. Supply Current vs. Supply Figure 16. Voltage Noise Density vs. THEREFORE, VERTICAL SCALE = 10 mV/DIV. Figure 19. Voltage Noise from 0 kHz to 10 kHz Figure 11. Slew Rate vs. Temperature Figure 14. Maximum Output Voltage

0.1 TO 10Hz PEAK-TO-PEAK NOISE

Figure 17. Low Frequency Voltage Figure 12. Supply Current vs. Figure 15. Maximum Output Voltage THEREFORE, VERTICAL SCALE = 10 mV/DIV. Figure 18. Voltage Noise from 0 kHz

–8– REV. E OUTLINE DIMENSIONS Dimensions shown in inches and (mm). C3154e–0–8/99PRINTED IN U.S.A. 8-Lead Plastic DIP (N-8) SEATING PLANE 0.060 (1.52) 0.015 (0.38)0.210 (5.33) MAX 0.022 (0.558) 0.014 (0.356) 0.160 (4.06) 0.115 (2.93) 0.070 (1.77) 0.045 (1.15) 0.130 (3.30) MIN PIN 1 0.280 (7.11) 0.240 (6.10) 0.100 (2.54) BSC 0.430 (10.92) 0.348 (8.84) 0.195 (4.95) 0.115 (2.93) 0.015 (0.381) 0.008 (0.204) 0.325 (8.25) 0.300 (7.62) 8-Lead SOIC (SO-8) 0.1968 (5.00) 0.1890 (4.80) 0.2440 (6.20) 0.2284 (5.80) PIN 1 0.1574 (4.00) 0.1497 (3.80) 0.0500 (1.27) BSC 0.0688 (1.75) 0.0532 (1.35) SEATING PLANE 0.0098 (0.25) 0.0040 (0.10) 0.0192 (0.49) 0.0138 (0.35) 0.0098 (0.25) 0.0075 (0.19) 0.0500 (1.27) 0.0160 (0.41) 0.0196 (0.50) 0.0099 (0.25)3 458 8-Lead Metal Can (H-08B) 0.250 (6.35) MIN 0.750 (19.05) 0.165 (4.19) REFERENCE PLANE 0.050 (1.27) MAX 0.019 (0.48) 0.016 (0.41) 0.021 (0.53) 0.016 (0.41) 0.045 (1.14) 0.010 (0.25) 0.040 (1.02) MAX BASE & SEATING PLANE 0.335 (8.51) 0.305 (7.75) 0.370 (9.40) 0.335 (8.51) 0.034 (0.86) 0.027 (0.69) 0.045 (1.14) 0.027 (0.69) 0.160 (4.06) 0.110 (2.79) 0.100 (2.54) BSC 2 8 0.200 (5.08) BSC 0.100 (2.54) BSC 45° BSC