AMP01GS-REEL

AMP01 AD | Alldatasheet

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REV. D Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. a AMP01* Low Noise, Precision Instrumentation Amplifier GENERAL DESCRIPTION The AMP01 is a monolithic instrumentation amplifier designed for high-precision data acquisition and instrumentation applica- tions. The design combines the conventional features of an instrumentation amplifier with a high current output stage. The output remains stable with high capacitance loads (1 mF), a unique ability for an instrumentation amplifier. Consequently, the AMP01 can amplify low level signals for transmission through long cables without requiring an output buffer. The output stage may be configured as a voltage or current generator. Input offset voltage is very low (20 mV), which generally elimi- nates the external null potentiometer. Temperature changes have minimal effect on offset; TCV IOS is typically 0.15 mV/°C. Excellent low-frequency noise performance is achieved with a minimal compromise on input protection. Bias current is very low, less than 10 nA over the military temperature range. High common-mode rejection of 130 dB, 16-bit linearity at a gain of 1000, and 50 mA peak output current are achievable simulta- neously. This combination takes the instrumentation amplifier one step further towards the ideal amplifier. AC performance complements the superb dc specifications. The AMP01 slews at 4.5 V/ms into capacitive loads of up to 15 nF, settles in 50 ms to 0.01% at a gain of 1000, and boasts a healthy 26 MHz gain-bandwidth product. These features make the AMP01 ideal for high speed data acquisition systems. Gain is set by the ratio of two external resistors over a range of 0.1 to 10,000. A very low gain temperature coefficient of 10 ppm/°C is achievable over the whole gain range. Output voltage swing is guaranteed with three load resistances; 50 W , 500 W , and 2 kW . Loaded with 500 W , the output delivers – 13.0 V minimum. A thermal shutdown circuit prevents de- struction of the output transistors during overload conditions. The AMP01 can also be configured as a high performance op- erational amplifier. In many applications, the AMP01 can be used in place of op amp/power-buffer combinations. PIN CONFIGURATIONS 18-Lead Cerdip TOP VIEW (Not to Scale) AMP01 OUTPUT REFERENCE R G R G –IN VOOS NULL SENSE TEST PIN* VOOS NULL –VOP +IN VIOS NULL VIOS NULL R S +VOP R S *MAKE NO ELECTRICAL CONNECTION AMP01 BTC/883 28-Terminal LCC NC = NO CONNECT TOP VIEW (Not to Scale) 28 2712342 6 12 13 14 15 16 17 18 AMP01 NC VOOS NULL NC VOOS NULL NC TEST PIN* NC VIOS NULL NC R S R S +VOP NC –IN R G R G NC +IN NC VIOS NULL SENSE REF OUT NC –VOP NC *MAKE NO ELECTRICAL CONNECTION 20-Lead SOIC TOP VIEW (Not to Scale) AMP01 –VOP OUTPUT REFERENCE TEST PIN* –IN VOOS NULL SENSE TEST PIN* VOOS NULL +VOP TEST PIN* +IN V IOS NULL R S R S R G R G VIOS NULL *MAKE NO ELECTRICAL CONNECTION

FEATURES

Low Offset Voltage: 50 mV Max Very Low Offset Voltage Drift: 0.3 mV/8C Max Low Noise: 0.12 mV p-p (0.1 Hz to 10 Hz) Excellent Output Drive: 610 V at 650 mA Capacitive Load Stability: to 1 mF Gain Range: 0.1 to 10,000 Excellent Linearity: 16-Bit at G = 1000 High CMR: 125 dB min (G = 1000) Low Bias Current: 4 nA Max May Be Configured as a Precision Op Amp Output-Stage Thermal Shutdown Available in Die Form *Protected under U.S. Patent Numbers 4,471,321 and 4,503,381. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1999

REV. D–2– AMP01–SPECIFICATIONS ELECTRICAL CHARACTERISTICS (@ VS = 615 V, RS = 10 kV, RL = 2 kV, TA = +258C, unless otherwise noted) AMP01A AMP01B Parameter Symbol Conditions Min Typ Max Min Typ Max Units OFFSET VOLTAGE Input Offset Voltage V IOS TA = +25°C 2 05 0 4 01 0 0 mV –55°C £ TA £ +125°C 4 08 0 6 01 5 0 mV Input Offset Voltage Drift TCV IOS –55°C £ TA £ +125°C 0.15 0.3 0.3 1.0 mV/°C Output Offset Voltage V OOS TA = +25°C1 3 2 6 m V –55°C £ TA £ +125°C3 6 6 1 0 m V Output Offset Voltage Drift TCV OOS RG = ¥ –55°C £ TA £ +125°C 2 05 0 5 01 2 0 mV/°C Offset Referred to Input PSR G = 1000 120 130 110 120 dB vs. Positive Supply G = 100 110 130 100 120 dB V+ = +5 V to +15 V G = 10 95 110 90 100 dB G = 1 75 90 70 80 dB –55°C £ T A £ +125°C G = 1000 120 130 110 120 dB G = 100 110 130 100 120 dB G = 10 95 110 90 100 dB G = 1 75 90 70 80 dB Offset Referred to Input PSR G = 1000 105 125 105 115 dB vs. Negative Supply G = 100 90 105 90 95 dB V– = –5 V to –15 V G = 10 70 85 70 75 dB G = 1 50 65 50 60 dB –55°C £ T A £ +125°C G = 1000 105 125 105 115 dB G = 100 90 105 90 95 dB G = 10 70 85 70 75 dB G = 1 50 85 50 60 dB Input Offset Voltage Trim Range V S = – 4.5 V to – 18 V1 – 6 – 6m V Output Offset Voltage Trim Range V S = – 4.5 V to – 18 V1 – 100 – 100 mV INPUT CURRENT Input Bias Current I B TA = +25°C1 4 2 6 n A –55°C £ TA £ +125°C4 1 0 6 1 5 n A Input Bias Current Drift TCI B –55°C £ TA £ +125°C 40 50 pA/ °C Input Offset Current I OS TA = +25°C 0.2 1.0 0.5 2.0 nA Input Offset Current Drift TCI OS –55°C £ TA £ +125°C 3 5 pA/ °C INPUT Input Resistance R IN Differential, G = 1000 1 1 G W Differential, G £ 100 10 10 G W Common Mode, G = 1000 20 20 G W Input Voltage Range IVR T A = +25°C2 – 10.5 – 10.5 V Common-Mode Rejection CMR V CM = – 10 V, 1 kW Source Imbalance G = 1000 125 130 115 125 dB G = 100 120 130 110 125 dB G = 10 100 120 95 110 dB G = 1 85 100 75 90 dB –55°C £ T A £ +125°C G = 1000 120 125 110 120 dB G = 100 115 125 105 120 dB G = 10 95 115 90 105 dB G = 1 80 95 75 90 dB NOTES 1VIOS and VOOS nulling has minimal affect on TCV IOS and TCV OOS respectively. 2Refer to section on common-mode rejection. Specifications subject to change without notice.

ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Min Typ Max Min Typ Max Units OFFSET VOLTAGE Input Offset Voltage V IOS TA = +25°C 2 05 0 4 01 0 0 mV TMIN £ TA £ TMAX 40 80 60 150 mV Input Offset Voltage Drift TCV IOS TMIN £ TA £ TMAX1 0.15 0.3 0.3 1.0 mV/°C Output Offset Voltage V OOS TA = +25°C1 3 2 6 m V TMIN £ TA £ TMAX 36 61 0 m V Output Offset Voltage Drift TCV OOS RG = ¥ 1 TMIN £ TA £ TMAX 20 100 50 120 mV/°C Offset Referred to Input PSR G = 1000 120 130 110 120 dB vs. Positive Supply G = 100 110 130 100 120 dB V+ = +5 V to +15 V G = 10 95 110 90 100 dB G = 1 75 90 70 80 dB T MIN £ TA £ TMAX G = 1000 120 130 110 120 dB G = 100 110 130 100 120 dB G = 10 95 110 90 100 dB G = 1 75 90 70 80 dB Offset Referred to Input PSR G = 1000 110 125 105 115 dB vs. Negative Supply G = 100 95 105 90 95 dB V– = –5 V to –15 V G = 10 75 85 70 75 dB G = 1 55 65 50 60 dB T MIN £ TA £ TMAX G = 1000 110 125 105 115 dB G = 100 95 105 90 95 dB G = 10 75 85 70 75 dB G = 1 55 85 50 60 dB Input Offset Voltage Trim Range V S = – 4.5 V to – 18 V2 – 6 – 6m V Output Offset Voltage Trim Range V S = – 4.5 V to – 18 V2 – 100 – 100 mV INPUT CURRENT Input Bias Current I B TA = +25°C1 4 2 6 m V TMIN £ TA £ TMAX 41 0 61 5 m V Input Bias Current Drift TCI B TMIN £ TA £ TMAX 40 50 pA/ °C Input Offset Current I OS TA = +25°C 0.2 1.0 0.5 2.0 mV TMIN £ TA £ TMAX 0.5 3.0 1.0 6.0 mV Input Offset Current Drift TCI OS TMIN £ TA £ TMAX 3 5 pA/ °C INPUT Input Resistance R IN Differential, G = 1000 1 1 G W Differential, G £ 100 10 10 G W Common Mode, G = 1000 20 20 G W Input Voltage Range IVR T A = +25°C3 – 10.5 – 10.5 V TMIN £ TA £ TMAX – 10.0 – 10.0 V Common-Mode Rejection CMR V CM = – 10 V, 1 kW Source Imbalance G = 1000 125 130 115 125 dB G = 100 120 130 110 125 dB G = 10 100 120 95 110 dB G = 1 85 100 75 90 dB T MIN £ TA £ TMAX G = 1000 120 125 110 120 dB G = 100 115 125 105 120 dB G = 10 95 115 90 105 dB G = 1 80 95 75 90 dB NOTES 1Sample tested. 2VIOS and VOOS nulling has minimal affect on TCV IOS and TCVOOS, respectively. 3Refer to section on common-mode rejection. Specifications subject to change without notice. (@ VS = 615 V, RS = 10 kV, RL = 2 kV, TA = +258C, –25 8C £ TA £ +858C for E, F grades, 08C £ TA £ +708C for G grade, unless otherwise noted) AMP01 –3–REV. D

–4– REV. D ELECTRICAL CHARACTERISTICS (@ VS = 615 V, RS = 10 kV, RL = 2 kV, TA = +258C, unless otherwise noted) AMP01A/E AMP01B/F/G Parameter Symbol Conditions Min Typ Max Min Typ Max Units GAIN Gain Equation Accuracy G = 20 · RS RG 0.3 0.6 0.5 0.8 % Accuracy Measured from G = 1 to 1000 Gain Range G 0.1 10k 0.1 10k V/V Nonlinearity G = 1000 1 0.0007 0.005 0.0007 0.005 % G = 1001 0.005 0.005 % G = 101 0.005 0.007 % G = 11 0.010 0.015 % Temperature Coefficient G TC 1 £ G £ 10001, 2 5 10 5 15 ppm °C OUTPUT RATING Output Voltage Swing V OUT RL = 2 kW– 13.0 – 13.8 – 13.0 – 13.8 V RL = 500 W– 13.0 – 13.5 – 13.0 – 13.5 V RL = 500 W 3 – 12.0 – 13.5 – 12.0 – 13.5 V Positive Current Limit Output-to-Ground Short 60 100 120 60 100 120 mA Negative Current Limit Output-to-Ground Short 60 90 120 60 90 120 mA Capacitive Load Stability 1 £ G £ 1000 No Oscillations 1 0.1 1 0.1 1 mF Thermal Shutdown Temperature Junction Temperature 165 165 °C NOISE Voltage Density, RTI e n fO = 1 kHz en G = 1000 5 5 nV/ ÖHz en G = 100 10 10 nV/ ÖHz en G = 10 59 59 nV/ ÖHz en G = 1 540 540 nV/ ÖHz Noise Current Density, RTI i n fO = 1 kHz, G = 1000 0.15 0.15 pA/ ÖHz Input Noise Voltage e n p-p 0.1 Hz to 10 Hz en p-p G = 1000 0.12 0.12 mV p-p en p-p G = 100 0.16 0.16 mV p-p en p-p G = 10 1.4 1.4 mV p-p en p-p G = 1 13 13 mV p-p Input Noise Current i n p-p 0.1 Hz to 10 Hz, G = 1000 2 2 pA p-p DYNAMIC RESPONSE Small-Signal G = 1 570 570 kHz Bandwidth (–3 dB) BW G = 10 100 100 kHz G = 100 82 82 kHz G = 1000 26 26 kHz Slew Rate SR G = 10 3.5 4.5 3.0 4.5 V/ ms Settling Time t S To 0.01%, 20 V step G = 1 12 12 ms G = 10 13 13 ms G = 100 15 15 ms G = 1000 50 50 ms NOTES 1Guaranteed by design. 2Gain tempco does not include the effects of gain and scale resistor tempco match. 3–55°C £ TA £ +125°C for A/B grades, –25 °C £ TA £ +85°C for E/F grades, 0 °C £ TA £ 70°C for G grades. Specifications subject to change without notice.

Model Temperature Range Package Description Package Option AMP01AX –55 °C to +125°C 18-Lead Cerdip Q-18 AMP01AX/883C –55 °C to +125°C 18-Lead Cerdip Q-18 AMP01BTC/883C –55 °C to +125°C 28-Terminal LCC E-28A AMP01BX –55 °C to +125°C 18-Lead Cerdip Q-18 AMP01BX/883C –55 °C to +125°C 18-Lead Cerdip Q-18 AMP01EX –25 °C to +85°C 18-Lead Cerdip Q-18 AMP01FX –25 °C to +85°C 18-Lead Cerdip Q-18 AMP01GBC Die AMP01GS 0 °C to +70°C 20-Lead SOIC R-20 AMP01GS-REEL 0 °C to +70°C1 3 " Tape and Reel R-20 AMP01NBC Die 5962-8863001VA* –55 °C to +125°C 18-Lead Cerdip Q-18 5962-88630023A* –55 °C to +125°C 28-Terminal LCC E-28A 5962-8863002VA* –55 °C to +125°C 18-Lead Cerdip Q-18 *Standard military drawing available. ELECTRICAL CHARACTERISTICS (@ VS = 615 V, RS = 10 kV, RL = 2 kV, TA = +258C, unless otherwise noted) AMP01A/E AMP01B/F/G Parameter Symbol Conditions Min Typ Max Min Typ Max Units SENSE INPUT Input Resistance R IN 35 50 65 35 50 65 k W Input Current I IN Referenced to V– 280 280 mA Voltage Range (Note 1) –10.5 +15 –10.5 +15 V REFERENCE INPUT Input Resistance R IN 35 50 65 35 50 65 k W Input Current I IN Referenced to V– 280 280 mA Voltage Range (Note 1) –10.5 +15 –10.5 +15 V Gain to Output 1 1 V/V POWER SUPPLY –25°C £ TA £ +85°C for E/F Grades, –55°C £ TA £ +125°C for A/B Grades Supply Voltage Range V S +V linked to +VOP – 4.5 – 18 – 4.5 – 18 V VS –V linked to –VOP – 4.5 – 18 – 4.5 – 18 V Quiescent Current I Q +V linked to +VOP 3.0 4.8 3.0 4.8 mA IQ –V linked to –VOP 3.4 4.8 3.4 4.8 mA NOTE 1Guaranteed by design. Specifications subject to change without notice. AMP01 –5–REV. D 1. RG 2. RG 3. –INPUT 4. VOOS NULL 5. VOOS NULL 6. TEST PIN* 7. SENSE 8. REFERENCE 9. OUTPUT 10. V– (OUTPUT) 11. V– 12. V+ 13. V+ (OUTPUT) 14. R S 15. RS 16. VIOS NULL 17. VIOS NULL 18. +INPUT * MAKE NO ELECTRICAL CONNECTION DICE CHARACTERISTICS Die Size 0.111 · 0.149 inch, 16,539 sq. mils

for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assem bly and testing. Figure 1. Simplified Schematic accumulate on the human body and test equipment and can discharge without detection. precautions are recommended to avoid performance degradation or loss of functionality.

–7–REV. D ELECTRICAL CHARACTERISTICS (@ VS = 615 V, RS = 10 kV, RL = 2 kV, TA = +258C, unless otherwise noted) AMP01NBC AMP01GBC Parameter Symbol Conditions Typical Typical Units Input Offset Voltage Drift TCV IOS 0.15 0.30 mV/°C Output Offset Voltage Drift TCV OOS RG = ¥ 20 50 mV/°C Input Bias Current Drift TCI B 40 50 pA/ °C Input Offset Current Drift TCI OS 3 5 pA/ °C Nonlinearity G = 1000 0.0007 0.0007 % Voltage Noise Density e n G = 1000 f O = 1 kHz 5 5 nV/ ÖHz Current Noise Density i n G = 1000 f O = 1 kHz 0.15 0.15 pA/ ÖHz Voltage Noise e n p-p G = 1000 0.1 Hz to 10 Hz 0.12 0.12 mV p-p Current Noise i n p-p G = 1000 2 2 pA p-p

0.1 Hz to 10 Hz

Small-Signal Bandwidth (–3 dB) BW G = 1000 26 26 kHz Slew Rate SR G = 10 4.5 4.5 V/ ms Settling Time t S To 0.01%, 20 V Step G = 1000 50 50 ms NOTE Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assem bly and testing.

Figure 30. R G and RS Selection source resistance unbalance. resistance in series with the reference input. minimum; at gains below 10, CMVR is reduced. above 100 and should be the average value of the two inputs. drive the buffer amplifier (Figure 31). together at one point, usually the analog power-supply ground. in the sensitive analog return path to the system ground point. interact with the analog signals.

should be kept as low as practicable, preferably below 100 °C. ent, and Pd is the device’s internal dissipation. easy to provide protection against typical system overloads. level is typically 5 nV/ ÖHz. 5.4 nV/ÖHz (refer to Figure 35). junctions that would degrade the input signal. Figure 35. Input Overvoltage Protection for Gains practical circuit requires careful attention to external influences.

–22– REV. D OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 18-Lead Cerdip (Q-18) 1 9 0.310 (7.87) 0.220 (5.59) PIN 1 0.005 (0.13) MIN 0.098 (2.49) MAX SEATING PLANE 0.023 (0.58) 0.014 (0.36) 0.200 (5.08) MAX 0.960 (24.38) MAX 0.150 (3.81) MIN 0.070 (1.78) 0.030 (0.76) 0.200 (5.08) 0.125 (3.18) 0.100 (2.54) BSC 0.060 (1.52) 0.015 (0.38) 158 0.320 (8.13) 0.290 (7.37) 0.015 (0.38) 0.008 (0.20) 20-Lead SOIC (R-20) SEATING PLANE 0.0118 (0.30) 0.0040 (0.10) 0.0192 (0.49) 0.0138 (0.35) 0.1043 (2.65) 0.0926 (2.35) 0.0500 (1.27) BSC 0.0125 (0.32) 0.0091 (0.23) 0.0500 (1.27) 0.0157 (0.40) 0.0291 (0.74) 0.0098 (0.25)3 458 20 11 101 0.5118 (13.00) 0.4961 (12.60) 0.4193 (10.65) 0.3937 (10.00) 0.2992 (7.60) 0.2914 (7.40) PIN 1 28-Terminal Ceramic Leadless Chip Carrier (E-28A) 28 5 BOTTOM VIEW 25 0.028 (0.71) 0.022 (0.56)

458 TYP

0.015 (0.38) MIN 0.055 (1.40) 0.045 (1.14) 0.050 (1.27) BSC 0.075 (1.91) REF 0.011 (0.28) 0.007 (0.18) R TYP 0.095 (2.41) 0.075 (1.90) 0.150 (3.51) BSC 0.300 (7.62) BSC 0.200 (5.08) BSC 0.075 (1.91) REF 0.458 (11.63) 0.442 (11.23) SQ 0.458 (11.63) MAX SQ 0.100 (2.54) 0.064 (1.63) 0.088 (2.24) 0.054 (1.37) C3103b–0–12/99PRINTED IN U.S.A.