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Technical content

Features

/g120/g350 /g58 match on input and output /g120/g3ESD protection, 70V MM and 300V HBM Typical Performance (Vd=5V, Idsq=0.1A) /g120/g3Frequency range 30KHz to 80 GHz /g120/g3Small signal Gain: 8dB /g120/g3P-1dB: 15 dBm @ 40 GHz /g120/g3Input/Output return loss of -10dB/-10dB

Applications

/g120/g3Microwave Radio systems /g120/g3Satellite VSAT, Up/Down Link /g120/g3Optical fiber laser driver Note: 1. This MMIC uses depletion mode pHEMT devices. Negative supply is used for DC gate biasing. Attention: Observe Precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A): 70V ESD Human Body Model (Class 1A): 300V Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. Chip Size: 1600 x 950 /g80m (63 x 37 mils) Chip Size Tolerance: ± 10 /g80m (±0.4 mils) Chip Thickness: 100 ± 10 /g80m (4 ± 0.4 mils) Pad Dimensions: 75 x 75 /g80m (3 x 3 ± 0.4 mils)

Absolute Maximum Ratings[1,2,3, and 4] Symbol Parameters Unit Max Vd Positive Supply Voltage[2] V7 Vg1 Gate Supply Voltage V -3.6 to 0 Vg2 Gate Supply Voltage V -2.5 to +2.5 PD Power Dissipation[2] W 0.8 Pin CW Input Power dBm 23 Tch Operating Channel Temp. °C +150 Tstg Storage Case Temp. °C -65 to +155 Tmax Maximum Assembly Temp (30 sec max) °C +320 Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2. Combinations of supply voltage and drain current shall not exceed P 3. The operating channel temperature will directly affect the devic e MTTF. For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. DC Specifications/ Physical Properties [5] Symbol Parameters and Test Conditions Unit Min Typ Max Vd Drain Supply Voltage V 5 Id(q) Drain Supply Current (Vd=5 V, Vg set for Id(q)Typical) mA 100 Vg1 Gate Supply Operating Voltage (Id(q) = 100 mA) V -3.6 -2.0 -1.2 R/g84jc Thermal Resistance[5] (Channel-to-Backside) °C/W 12.8 Tch Channel Temperature @85°C Backside °C 91.4 RF Specifications [1,2] TA= 25°C, Vdd = 5 V, Idq =0.1 A, Zo=50 /g58 Symbol Parameters and Test Conditions Units Minimum Typical Maximum Freq Operational Frequency GHz 30KHz 80 Gain Small-signal Gain Freq = 2, 10, 20, 30, 40 GHz dB 7.5 8 P -1dB Output Power at 1dB Gain Compression Freq = 40GHz dBm 13 15 OIP3 Third Order Output Intercept Point@20GHz /g39f = 10MHz, Po = +10dBm, SCL dBm 20 RLin Input Return Loss dB 10 RLout Output Return Loss dB 15 Isolation Reverse Isolation dB 27 Notes: 1. Small/Large -signal data measured from an on-wafer tester at T A = 25°C. 2. 100% on-wafer RF test of Gain, Return Losses and Reverse Isolation is done at frequencies: 2,10, 20, 30, and 40 GHz.

AMMC-5025 Performance Distributions Sample Size= 6,876 16 17 18 -17 -16 -15 P1dB (Freq=20GHz) (dBm) S21 (Freq=20 GHz) (dB) S11 (Freq=20 GHz) (dB) S22 (Freq=20 GHz) (dB)

Typical Scattering Parameters [1], (TA = 25°C, Vd =5 V, ID = 0.1 A, Z in = Zout = 50 /g58) Freq [GHz] S11 S21 S12 S22 dB Mag Phase dB Mag Phase dB Mag Phase dB Mag Phase

Typical Scattering Parameters [1], (Continued) Freq [GHz] S11 S21 S12 S22 dB Mag Phase dB Mag Phase dB Mag Phase dB Mag Phase

Typical Scattering Parameters [1], (Continued) Freq [GHz] S11 S21 S12 S22 dB Mag Phase dB Mag Phase dB Mag Phase dB Mag Phase Note: 1. Data obtained from an on-wafer condition. Application and Usage AMMC-5025 is biased with a single positive drain supply dd), a negative gate supply (V g1), and has a positive control gate supply (V g2). For best overall performance, the recommended bias condition for the AMMC-5025 is V dd = 5 V and I dd = 100 mA. To achieve this drain current level, Vg1 is typically –1.8V. Typically, DC current flow for V g1 is –10 mA. Open circuit is the default setting for V g2 when not utilizing gain control. Minor improvements in performance are possible depending on the application. The drain bias voltage range is 3 to 6V and the quiescent drain current biasing range is 80mA to 120mA. Input and output RF ports are DC coupled; therefore, DC decoupling capacitors are required if there are DC paths. RF bond connections should be kept as short as possible to reduce RF lead inductance which will degrade perfor- mance above 20 GHz. Ground connections are made with plated through-holes to the backside of the device; therefore, ground wires are not needed. Using the simplest form of assembly (Figure 11), the device is capable of delivering flat gain over a 2-80 GHz range with a minimum of gain slope and ripple. Figure 11 shows a typical assembly application. However, this device is designed with DC coupled RF I/O ports, and operation may be extended to lower frequen- cies (<2 GHz) through the use of off-chip low-frequency extension circuitry and proper external biasing compo- nents. With low frequency bias extension it may be used in a variety of time-domain applications (through 80 Gb/s). Refer to the low frequency extension section of Avago Applications Note 5359 “AMMC-5024 30KHz-40GHz TWA Operational Guide” for detailed information on use below 2 GHz. Note: 1. Eutectic attach is not recommended and may jeopardize reliability of the device.

Figure 11. Recommended assemble example needs to be handled with all necessary ESD protocols.

Names and Contents of the Toxic and Hazardous Substances or Elements in the Products Part Name Lead (Pb) (Pb) Mercury (Hg) Hg Cadmium (Cd) Cd Hexavalent (Cr(VI)) Cr(VI) Polybrominated biphenyl (PBB) PBB Polybrominated diphenylether (PBDE) PBDE 100pF capacitor : indicates that the content of the toxic and hazardous substance in all the homogeneous materials of the part is below the concentration limit requirement as described in SJ/T 11363-2006. : indicates that the content of the toxic and hazardous substance in at least one homogeneous material of the part exceeds the concentration limit requirement as described in SJ/T 11363-2006. (The enterprise may further explain the technical reasons for the “x” indicated portion in the table in accordance with the actual situations.) SJ/T 11363-2006 SJ/T 11363-2006 “×” Note: EU RoHS compliant under exemption clause of “lead in electronic ceramic parts (e.g. piezoelectronic devices)” Toxic and Hazardous Substances or Elements For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. AV02-2200EN - October 14, 2009