AMJD31C-HF COMCHIP | Alldatasheet

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Features

  • Lead formed for surface mount application. Dimensions in inches and (millimeters) TO-252 0.270(6.85) 0.246(6.25) 0.199(5.05) 0.222(5.65) 0.252(6.40) 0.228(5.80) 0.094(2.40) 0.087(2.20) 0.024(0.60) 0.016(0.40) 0.024(0.60) 0.016(0.40) 0.406(10.31) 0.382(9.71) 0.222(5.65) 0.199(5.05) 0.098(2.50) 0.083(2.10) 0.035(0.90) 0.028(0.70) 0.028(0.70) 0.020(0.50) 1 23 - AEC-Q101 Qualified. - Straight lead. Circuit Diagram Collector Base Emitter AQW-JTR39 Page 1 REV:A Mechanical data - Mounting position: Any. - Case: TO-252, molded plastic. - Molding compound: UL flammability classification rating 94V-0. - Terminals: Tin-plated, solderability per MIL-STD-202, method 208. Maximum Ratings (at Ta=25°C unless otherwise specified) UnitsSymbolParameter Value VCBO VCEO VEBO IC PD TJ 100 100 1.25 -65 to +150 V V V A W Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector current (continuous) Power dissipation Junction temperature range Collector current (peak) Base current (continuous) IB ICM 5 A A TSTG -65 to +150 °CStorage temperature range

Electrical Characteristics (at Ta=25°C unless otherwise specified) UnitsSymbolParameter Typ V(BR)CBO ICBO ICEO 100 V mA Collector-base breakdown voltage Collector cut-off current Collector cut-off current DC current gain Transition frequency Min MaxConditions VBE(on) 1.2 1.8 MHz Collector-emitter saturation voltage Base-emitter on voltage IC = 100µA, IE = 0 VCB = 100V, IE = 0 VCE = 60V, IB = 0 VCE = 4V, IC = 1A V V hFE fT 3 VCE = 4V, IC = 3A IC = 0.5A, VCE = 10V µA µA Emitter cut-off current IEBO VCE(sat) IC = 3A, IB = 0.375A VEB = 5V, IC = 0 VCE = 4V, IC = 3A Silicon Epitaxial Planar Transistor Comchip Technology CO., LTD. Page 2 V(BR)CEO V(BR)EBO Collector-emitter breakdown voltage Emitter-base breakdown voltage IC = 30mA, IB = 0 IE = 1mA, IC = 0 V V ICES µACollector cut-off current VCE = 100V, VEB = 0 100 hFE AQW-JTR39 REV:A

Fig.3 - VBE(sat) vs. IC Base Emitter Station Voltage, VBE(sat) (mV) 1200 1500 900 Collector Current, IC (mA) Fig.1 - hFE vs. IC DC Current Gain, hFE Collector Current, IC (mA) 1 10 100 100 150 10000 Fig.4 - VBE(ON) vs. IC Collector Current, IC (mA) Base Emitter On Voltage, VBE(ON) (mV) Fig.2 - VCE(sat) vs. IC Collector Emitter Station Voltage, VCE(sat) (mV) 1000 Rating and Characteristic Curves (AMJD31C-HF) Silicon Epitaxial Planar Transistor Comchip Technology CO., LTD. Page 3AQW-JTR39 REV:A Collector Current, IC (mA) 1000 VCE= 4V TA=150°C TA=25°C 1 10 100 100001000 100 TA=25°C TA=150°C IC/IB=8 1 10 100 100001000 600 300 TA=25°C TA=150°C IC/IB=8 1 10 100 100001000 1200 1500 900 600 300 TA=150°C TA=25°C VCE= 4V

Silicon Epitaxial Planar Transistor Comchip Technology CO., LTD. Page 4AQW-JTR39 REV:A Trailer Device Leader Direction of Feed 400mm (min)160mm (min) SYMBOL (mm) (inch) E F P P0 P1 T W W1 TO-252 SYMBOL (mm) (inch) A B C d D D1 D2 − 0.008 3.937 ± 0.039 100 ± 1.00 0.827 ± 0.012 TO-252 Reel Taping Specification DD1D2 120° E F P P0 P1 T W A B C d

Silicon Epitaxial Planar Transistor Comchip Technology CO., LTD. Page 5AQW-JTR39 REV:A Marking Code Standard Packaging Case Type TO-252 REEL (pcs) Reel Size (inch) 132,500 REEL PACK Part Number Marking Code AMJD31C-HF MJD31C Suggested P.C.B. PAD Layout SIZE (inch) 0.071 (mm) 1.80 2.70 1.50 0.106 0.059 TO-252 2.30 0.091 A B C D 6.40 0.252E 6.80 0.268F A B C D E F D MJD31C XXX = Control code XXX