AME5145

AME5145 AME | Alldatasheet

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1.6 MHz Boost Converter With

converters operating at fixed frequency of 1.6 MHz. pacitors result in the industry's highest power density. for boosting to voltages up to 30V. tion simplifies and reduces component count. Figure 1. 4.2V to 5V Boost Converter Figure 2. 5V to 12V Boost Converter Figure 3. 5V to 18V Boost Converter

Figure 4. Functional Block Diagram

Rev.B.01 n Pin Configuration AME5145AEEV 1. SW 2. GND 3. FB 4. EN 5. IN SOT-25/TSOT-25 Top View * Die Attach: Conductive Epoxy DFN-8C (3mmx3mmx0.75mm) Top View AME5145AEVA 1. NC 2. FB 3. NC 4. SW 5. NC 6. IN 7. EN 8. NC * Die Attach: Conductive Epoxy MSOP-8 Top View AME5145AEQA 1. IN 2. EN 3. GND 4. FB 5. SW 6. SW 7. GND 8. GND * Die Attach: Conductive Epoxy Note: The trapezoid area enclosed by dashed line represents Exposed Pad and is GND. 1 32 4 5678 AME5145 1 32 5 4 AME5145 8 7 6 1 2 3 4 AME5145

30V Internal FET SwitchAME5145 Rev.B.01 n Pin Description (Continued) AME5145AEEV SOT-25/TSOT-25 AME5145AEQA MSOP-8 Pin Number Pin Name Pin Description 1 IN Analog and Power input. Input Supply Pin. Place bypass capacitor as close to V IN as possible. 2 EN Enable, active high. The enable pin is an active high control. Tie this pin above 2V to enable the device. Tie this pin below 0.4V to turn off the device. 3 GND Ground. Tie directly to ground plane. 4 FB Output voltage feedback input. Set the output voltage by selecting values for R1 and R2 using: Connect the ground of the feedback network to a GND plane. 5 SW Power Switch input. This is the drain of the internal NMOS power switch. Minimize the metal trace area connected to this pin to minimize EMI. 6 SW Power Switch input. This is the drain of the internal NMOS power switch. Minimize the metal trace area connected to this pin to minimize EMI. 7 GND Ground. Tie directly to ground plane. 8 GND Ground. Tie directly to ground plane.  −= 123.121 V VRR out Pin Number Pin Name Pin Description 1 SW Power Switch input. This is the drain of the internal NMOS power switch. Minimize the metal trace area connected to this pin to minimize EMI. 2 GND Ground. Tie directly to ground plane. 3 FB Output voltage feedback input. Set the output voltage by selecting values for R1 and R2 using: Connect the ground of the feedback network to a GND plane. 4 EN Enable, active high. The enable pin is an active high control. Tie this pin above 2V to enable the device. Tie this pin below 0.4V to turn off the device. 5 IN Analog and Power input. Input Supply Pin. Place bypass capacitor as close to V IN as possible.  −= 123.121 V VRR out

Rev.B.01 Pin Number Pin Name Pin Description

1 NC Not Connected

Output voltage feedback input. Set the output voltage by selecting values for R1 and R2 using: Connect the ground of the feedback network to a GND plane.

3 NC Not Connected

Power Switch input. This is the drain of the internal NMOS power switch. Minimize the metal trace area connected to this pin to minimize EMI.

5 NC Not Connected

6 IN Analog and Power input. Input Supply Pin. Place bypass capacitor as close to V IN as possible. 7 EN Enable, active high. The enable pin is an active high control. Tie this pin above 2V to enable the device. Tie this pin below 0.4V to turn off the device.

8 NC Not Connected

 −= 123.121 V VRR out n Pin Description AME5145AEVA DFN-8C(3mmx3mmx0.75mm)

30V Internal FET SwitchAME5145 Rev.B.01 n Ordering Information Operating Ambient Temperature Range Number of Pins Package Type Pin Configuration Special Feature1 AME5145 x x x x xxx x - x Output Voltage Special Feature2 A 1. SW E: -40OC to +85OC E: SOT-2X V: 5 ADJ: Adjustable Lead free & 3: 3x3x0.75(mm) (LxWxH) (SOT-25) 2. GND V: DFN A: 8 Low profile (TSOT-25) 3. FB Q: MSOP (For TSOT-25 only) 4. EN Z: Lead free 5. IN A 1. NC (DFN-8C) 2. FB 3. NC 4. SW 5. NC 6. IN 7. EN 8. NC A 1. IN (MSOP-8) 2. EN 3. GND 4. FB 5. SW 6. SW 7. GND 8. GND Pin Configuration Operating Ambient Temperature Range Package Type Number of Pins Special Feature2 (For DFN package only)Output Voltage Special Feature1

Rev.B.01 n Ordering Information Note: ww & yyww represents the date code and pls refer to Date Code Rule. * A line on top of the first letter represents lead free plating such as BLLww. Please consult AME sales office or authorized Rep./Distributor for the availability of package type. Part Number Marking* Output Voltage Package Operating Ambient Temperature Range AME5145AEEVADJZ BLLww ADJ SOT-25 -40OC to +85OC AME5145AEEVADJY BLLww ADJ TSOT-25 -40OC to +85OC AME5145AEVAADJZ-3 BLN yyww ADJ DFN-8C -40OC to +85OC AME5145AEQAADJZ 5145 Ayww ADJ MSOP-8 -40OC to +85OC

30V Internal FET SwitchAME5145 Rev.B.01 n Absolute Maximum Ratings n Recommended Operating Conditions n Thermal Information Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device. * HBM B:2000V~3999V * Measure θ JC on backside center of molding compund if IC has no tab. ** MIL-STD-202G 210F Parameter Symbol Maximum Unit Input Supply Voltage VIN 6 V EN, FB Voltages VEN,VFB VIN V SW Voltage VSW 30 V ESD Classification B* Parameter Symbol Rating Unit Ambient Temperature Range TA -40 to +85 Junction Temperature Range TJ -40 to +125 Storage Temperature Range TSTG -65 to +150 oC Parameter Package Die Attach Symbol Maximum Unit SOT-25 / TSOT-25 81 MSOP-8 100 DFN-8C 17 SOT-25 / TSOT-25 260 MSOP-8 206 DFN-8C 125 SOT-25 / TSOT-25 400 MSOP-8 625 DFN-8C 800 150 350 Thermal Resistance (Junction to Ambient) Internal Power Dissipation θ JC θ JA oC Maximum Junction Temperature PD Conductive Epoxy Solder Iron (10 Sec)** oC / W mW Thermal Resistance* (Junction to Case)

Rev.B.01 n Electrical Specifications VIN = 5V, EN = VIN, TA= 25oC, I L = 0A, unless otherwise noted. Parameter Symbol Min Typ Max Units Input Voltage VIN 2.7 5.5 V 1.5 1.8 1.2 TA = 25OC 0.4 0.6 TA = -40 to +85oC 0.7 TA = 25OC 0.5 0.7 TA = -40 to +85oC 0.8 0 2 Feedback Pin Reference Voltage VFB 1.205 1.23 1.255 V Feedback Pin Bias Current IFB 60 500 nA TA = 25oC 2 TA = 25oC 400 Shutdown Current 0.01 1 µA Undervoltage Lockout UVP 2.15 2.35 2.55 V Over Temperature Protection OTP 160 oC OTP Hysteresis Temperature 20 oC FB Voltage Line Regulation 0.02 %V Switching Frequency fSW 1 1.6 1.85 MHz Maximum Duty Cycle DMAX 86 93 % Switch Leakage ISW 0.1 2 µA EN Input Threshold (Low) (Shutdown) 0.4 EN Input Threshold (High) (Enable the device) 2 FB = 1.3V (Not Switching) VIN = 5V TA = -40 to +85oC VFB = 1.23V Rising Edge VIN=2.7V to 5.5V Switch Current Limit IEN Quiescent Current FB = 1.15V (Switching) EN = 5V VIN = 3V Switch ON Resistance IQ EN Pin Bias Current VIN = 5V TA = -40 to +85oC A EN = 0V TA = -40 to +85oC TA = 25OC Ω µA VIN = 5V EN = 0V VIN=3V, TA = -40 to +85oC EN = 0V VIN=3V, TA = -40 to +85oC 2.7V <= VIN <= 5.5V Test Condition RDSON ICL VIN = 3.3V µA mA 500 EN Threshold TA = -40 to +85oC TA = -40 to +85oC V IN FB V V Δ Δ

30V Internal FET SwitchAME5145 Rev.B.01 n Detailed Description The AME5145 is a switching converter IC that operates at a fixed frequency (1.6MHz) for fast transient response over a wide input voltage range and incorporates pulse-by- pulse current limiting protection. Operation can be best understood by referring to Figure 4. Because this is cur- rent mode control, a 33m Ω sense resistor in series with the switch FET is used to provide a voltage (which is pro- portional to the FET current) to both the input of the pulse width modulation (PWM) comparator and the current limit amplifier. At the beginning of each cycle, the S-R latch turns on the FET. As the current through the FET increases, a voltage (proportional to this current) is summed with the ramp com- ing from the ramp generator and then fed into the input of the PWM comparator. When this voltage exceeds the volt- age on the other input (coming from the Gm amplifier), the latch resets and turns the FET off. Since the signal coming from the Gm amplifier is derived from the feedback (which samples the voltage at the output), the action of the PWM comparator constantly sets the correct peak current through the FET to keep the output voltage in regulation. Q1 and Q2 align with R3 - R6 form a bandgap voltage reference used by the IC to hold the output in regulation. The currents flowing through Q1 and Q2 will be equal, and the feedback loop will adjust the regulated output to main- tain this. Because of this, the regulated output is always maintained at a voltage level equal to the voltage at the FB node "multiplied up" by the ratio of the output resistive di- vider. The current limit comparator feeds directly into the flip- flop that drives the switch FET. If the FET current reaches the limit threshold, the FET is turned off and the cycle ter- minated until the next clock pulse. The current limit input terminates the pulse regardless of the status of the output of the PWM comparator. n Application Hints Selecting The External Capacitors The best capacitors for use with the AME5145 are multilayer Ceramic capacitors. They have the lowest ESR (equivalent series resistance) and highest resonance frequency, which makes them optimum for use with high frequency switching Converters. When selecting a ce- ramic capacitor, only X5R and X7R dielectric types should be used. Other types such as Z5U and Y5F have such severe loss of capacitance due to effects of temperature variation and applied voltage, they may provide as little as 20% of rated capacitance in many typical applica- tions. Always consult capacitor manufacturer ’s data curves before selecting a capacitor. High-quality ceramic capacitors can be obtained from Taiyo-Yuden, AVX, and Murata. Selecting The Output Capacitor A single ceramic capacitor of value 4.7µF to 10µF will provide sufficient output capacitance for most applica- tions. If larger amounts of capacitance are desired for improved line support and transient response, tantalum capacitors can be used. Aluminum electrolytic with ul- tra low ESR such as Sanyo Oscon can be used, but are usually prohibitively expensive. Typical AI electrolytic capacitors are not suitable for switching frequencies above 500kHz due to significant ringing and temperature rise due to self-heating from ripple current. An output ca- pacitor with excessive ESR can also reduce phase mar- gin and cause instability. In general, if electrolytic are used, it is recommended that. They be paralleled with ceramic capacitors to reduce ringing, switching losses, and output voltage ripple. Selecting The Input Capacitor An input capacitor is required to serve as an energy reservoir for the current which must flow into the coil each time the switch turns ON. This capacitor must have extremely low ESR, so ceramic is the best choice. We recommend a nominal value of 4.7µF, but larger val- ues can be used. Since this capacitor reduces the amount of voltage ripple seen at the input pin, it also reduces the amount of EMI passed back along that line to other circuitry.

Rev.B.01 n Application Hints Feed-Forward Compensation Although internally compensated, the feed-forward ca- pacitor Cf is required for stability. Adding this capacitor puts a zero in the loop response of the Converter. The recommended frequency for the zero fz should be ap- proximately 6kHz. Cf can be calculated using the for- mula: Cf = 1 / (2 x p x R1 x fz) Selecting Diodes The external diode used in the typical application should be a Schottky diode. A 20V diode such as the MBR0520 is recommended. The MBR05XX series of diodes are designed to handle a maximum average current of 0.5A. For applications exceeding 0.5A average but less than 1A, a Microsemi UPS5817 can be used. Layout Hints High frequency switching regulators require very care- ful layout of components in order to get stable operation and low noise. All components must be as close as pos- sible to the AME5145 device. It is recommended that a 4-layer PCB be used so that internal ground planes are available. As an example, a recommended layout of com- ponents is shown: Recommended PCB Component Layout (Top) Layout Hints Recommended PCB Component Layout (Bottom) Some additional guidelines to be observed: 1. Keep the path between L1, D1, and C2 extremely short. Parasitic trace inductance in series with D1 and C2 will increase noise and ringing. 2. The feedback components R1, R2 and CF must be kept close to the FB pin of U1 to prevent noise injection on the FB pin trace. 3. If internal ground planes are available use vias to con- nect directly to ground at pin 2 of U1, as well as the nega- tive sides of capacitors C1 and C2. Duty Cycle The maximum duty cycle of the switching regulator de- termines the maximum boost ratio of output-to-input volt- age that the converter can attain in mode of operation. The duty cycle for a given boost application is defined as: This applies for continuous mode operation. VOUT + VDIODE - VIN VOUT + VDIODE - VSW D =

30V Internal FET SwitchAME5145 Rev.B.01 n Application Hints Calculating Load Current The load current is related to the average inductor cur- rent by the relation: ILOAD = IIND (AVG) x (1 - D) Where “D” is the duty cycle of the application. The switch current can be found by: ISW = IIND (AVG) + 1 /2 (IRIPPLE) Inductor ripple current is dependent on inductance, duty cycle, input voltage and frequency: IRIPPLE = D x (VIN-VSW) / (f x L) Combining all terms, we can develop an expression which allows the maximum available load current to be calculated: Thermal Consuderations Shutdown Pin Operation ILOAD = ( 1-D ) x ( ISW (max) - )D ( VIN-VSW ) 2fL At higher duty cycles, the increased ON time of the FET means the maximum output current will be deter- mined by power dissipation within the AME5145 FET switch. The switch power dissipation from ON-state con- duction is calculated by: P(SW) = D x IIND(AVE)2 x RDS(ON) There will be some switching losses as well, so some derating needs to be applied when calculating IC power dissipation. Inductor Suppliers Recommended suppliers of inductors for this product include, but are not limited to Sumida, Coilcraft, Panasonic, TDK and Murata. When selecting an inductor, make cer- tain that the continuous current rating is high enough to avoid saturation at peak currents. A suitable core type must be used to minimize core (switching) losses, and wire power losses must be considered when selecting the current rating. The device is turned off by pulling the shutdown pin low. If this function is not going to be used, the pin should be tied directly to VIN. If the SHDN function will be needed, a pull-up resistor must be used to V IN (approximately 50k- 100k recommended). The EN pin must not be left unterminated.

Rev.B.01 IQ VIN(Active) vs Temperature Oscillator Frequency vs Temperature Temperature (°C) IQ VIN Active (mA) 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 -50 -25 0 25 50 75 100 125 150 Feedback Voltage vs Temperature Temperature(°C) Current Limit(A) 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 -50 -25 0 25 50 75 100 125 150 Current Limit vs Temperature Max. Duty Cycle vs Temperature Feedback Bias Current vs Temperature Temperature (°C) Max Duty Cycle (%) 90.1 91.1 92.1 93.1 94.1 95.1 96.1 -50 -25 0 25 50 75 100 125 150 VIN = 5V VIN = 3.3V Temperature(°C) Feedback Voltage (V) 1.200 1.205 1.210 1.215 1.220 1.225 1.230 1.235 1.240 -50 -25 0 25 50 75 100 125 Temperature(°C) Oscillator Frequency (MHz) 1.51 1.41 1.43 1.45 1.47 1.49 1.53 1.57 1.59 1.25 1.27 1.29 1.31 1.33 1.35 1.37 1.39 1.55 -50 -25 0 25 50 75 100 125 150 VIN = 3.3V VIN = 5V Feedback Bias Current(mA) Temperature (°C) 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 -50 -25 0 25 50 75 100 125 150

30V Internal FET SwitchAME5145 Rev.B.01 Efficiency vs Load CurrentEfficiency vs Load Current IQ VIN (Idle) vs Temperature RDS(ON) vs VIN RDS(on) vs Temperature RDS(ON) vs Temperature IQ VIN (Idle) (mA) Temperature(°C) 100 200 300 400 500 1 2 3 4 5 Temperature (°C) RDS(ON) (mW) 100 200 300 400 500 600 700 800 -50 -25 0 25 50 75 100 125 150 VIN (V) RDS(ON) (mW) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 Temperature (°C) RDS(ON) (mW) 100 200 300 400 500 600 700 800 -50 -25 0 25 50 75 100 125 150 100 300 Load Current (mA) Efficiency (%) 0 50 100 150 200 250 VIN = 2.7V, VOUT = 5V Load Current (mA) Efficiency (%) 100 0 200 400 600 800 1000 1200 1400 VIN = 4.2V, VOUT = 5V

Rev.B.01 Efficiency vs Load Current Efficiency vs Load Current Efficiency vs Load Current Efficiency vs Load Current Output Voltage vs Load CurrentEfficiency vs Load Current 4.65 4.75 4.85 4.95 5.05 5.15 IOUT (mA) Output Voltage (V) 4.60 4.70 4.80 4.90 5.00 5.10 5.20 0 300200100 400 500 600 700 800 900 10001100 1200 VIN = 3.3V VIN = 4.2V VIN = 2.7V VOUT = 12V Load Current (mA) Efficiency (%) 0 20 40 60 80 100 120 140 160 VIN = 3.3V, VOUT = 12V Load Current (mA) Efficiency (%) 100 0 100 200 300 400 500 600 700 VIN = 3.3V, VOUT = 5V 0 10 20 30 40 50 Load Current (mA) Efficiency (%) VIN = 2.7V, VOUT = 12V Load Current (mA) Efficiency (%) 0 100 200 300 400 500 6000 VIN = 5V, VOUT = 12V Load (mA) Efficiency (%) 100 0 50 100 150 200 250 300 350 VIN=5V, VOUT=18V

30V Internal FET SwitchAME5145 Rev.B.01 Output Voltage vs Load Current Output Voltage vs Load Current 12.4 11.8 12.0 12.2 0 50 100 150 200 250 300 350 400 IOUT (mA) Output Voltage (V) VIN = 3.3V VIN = 2.7V VIN = 5V VOUT = 12V 0 50 100 150 200 250 300 350 IOUT (mA) Output Voltage (V) VOUT = 12V VIN = 5V

Rev.B.01 Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size SOT-25 8.0±0.1 mm 4.0±0.1 mm 3000pcs 180±1 mm n Tape and Reel Dimension SOT-25 Carrier Tape, Number of Components Per Reel and Reel Size W P AME AME PIN 1 n Date Code Rule Year A A A W W xxx0 A A A W W xxx1 A A A W W xxx2 A A A W W xxx3 A A A W W xxx4 A A A W W xxx5 A A A W W xxx6 A A A W W xxx7 A A A W W xxx8 A A A W W xxx9 Marking Date Code

30V Internal FET SwitchAME5145 Rev.B.01 Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size TSOT-25 8.0±0.1 mm 4.0±0.1 mm 3000pcs 180±1 mm Carrier Tape, Number of Components Per Reel and Reel Size DFN-8C (3mmx3mmx0.75mm) n Tape and Reel Dimension TSOT-25 Carrier Tape, Number of Components Per Reel and Reel Size W P AME AME PIN 1 W P PIN 1 AME AME Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size DFN-8C

Rev.B.01 Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size MSOP-8 12.0±0.1 mm 4.0±0.1 mm 4000pcs 330±1 mm n Tape and Reel Dimension Carrier Tape, Number of Components Per Reel and Reel Size MSOP-8 PIN 1 W PAME AME

30V Internal FET SwitchAME5145 Rev.B.01 n Package Dimension SOT-25 MIN MAX MIN MAX A A1 0.00 0.15 0.0000 0.0059 b 0.30 0.55 0.0118 0.0217 D 2.70 3.10 0.1063 0.1220 E 1.40 1.80 0.0551 0.0709 e H 2.60 3.00 0.10236 0.11811 L q1 0o 10o 0o 10o 0.37BSC 0.0146BSC 0.95BSC 0.0374BSC 1.90 BSC 0.07480 BSC SYMBOLS MILLIMETERS INCHES 1.20REF 0.0472REF TSOT-25 Top View Side View D e E H Front View b A L PIN 1 Top View Side View D e E H Front View b A L PIN 1 MIN MAX MIN MAX A+A1 0.90 1.25 0.0354 0.0492 b 0.30 0.50 0.0118 0.0197 D 2.70 3.10 0.1063 0.1220 E 1.40 1.80 0.0551 0.0709 e H 2.40 3.00 0.09449 0.11811 L q1 0o 10o 0o 10o 0.35BSC 0.0138BSC 0.95BSC 0.0374BSC 1.90 BSC 0.07480 BSC SYMBOLS MILLIMETERS INCHES

Rev.B.01 n Package Dimension DFN-8C (3mmx3mmx0.75mm) MIN MAX MIN MAX A 0.700 0.800 0.028 0.031 D 2.900 3.100 0.114 0.122 E 2.900 3.100 0.114 0.122 e 0.600 0.700 0.024 0.028 D1 2.200 2.400 0.087 0.094 E1 1.400 1.600 0.055 0.063 b 0.200 0.320 0.008 0.013 L 0.375 0.575 0.015 0.023 G 0.153 0.253 0.0060 0.010 G1 0.000 0.050 0.0000 0.002 SYMBOLS MILLIMETERS INCHES TOP VIEW BOTTOM VIEW REAR VIEW e D E A GG1 b L PIN #1

30V Internal FET SwitchAME5145 Rev.B.01 n Package Dimension MSOP-8 WITH PLATING BASE METAL e R0.127(0.005) TYP ALL CORNER & EDGES TOP PKG. Top View Front View End View EE1 PIN 1 I.D (SHINNY SURFACE) D BTM PKG. L DETAIL A b A2A b c1c B SECTION BB B See Detail A θ MIN MAX MIN MAX A - 1.10 - 0.04330 A1 0.00 0.20 0.000 0.008 A2 0.75 0.95 0.029 0.037 b 0.28 0.38 0.011 0.015 b1 0.28 0.33 0.011 0.013 c 0.13 0.23 0.005 0.009 c1 0.13 0.17 0.005 0.006 D 2.90 3.10 0.114 0.122 E 4.77 4.98 0.188 0.196 E1 2.90 3.10 0.114 0.122 e L 0.40 0.80 0.01574 0.03149 q 0o 8o 0o 8o 0.94 REF 0.037 REF 0.010 TYP0.254 TYP 0.65 TYP 0.0255 TYP 1.95 TYP 0.0767 TYP SYMBOLS MILLIMETERS INCHES

Life Support Policy: These products of AME, Inc. are not authorized for use as critical components in life-support devices or systems, without the express written approval of the president of AME, Inc. AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and advises its customers to obtain the latest version of relevant information.  AME, Inc. , March 2010 Document: 1049-DS5145-B.01 Corporate Headquarter AME, Inc. 2F, 302 Rui-Guang Road, Nei-Hu District Taipei 114, Taiwan, R.O.C. Tel: 886 2 2627-8687 Fax: 886 2 2659-2989 www.ame.com.tw E-Mail: sales@ame.com.tw