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AiT Semiconductor Inc. www.ait-ic.com AM9926 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.1 - OCT 2010 RELEASED, MAR 2014 UPDATED - - 1 - DESCRIPTION FEATURES The AM9926 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. AM9926 is available in SOP8 package. V DS=20V, ID=6A RDS(ON)< 30mΩ @ VGS=4.5V RDS(ON)< 40mΩ @ VGS=2.5V High density cell design for ultra low RDSON Fully characterized Avalanche voltage and current Available in SOP8 package. ORDERING INFORMATION APPLICATION Package Type Part Number SOP8 M8 AM9926M8R AM9926M8VR Note V: Halogen free Package R: Tape & Reel SPQ:2,500pcs/Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package Power switching application Hard Switched and High Frequency Circuits Uninterruptible Power Supply PIN DESCRIPTION
AiT Semiconductor Inc. www.ait-ic.com AM9926 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.1 - OCT 2010 RELEASED, MAR 2014 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 S2 Source
2 G2 Gate
3 S1 Source
4 G1 Gate
5 D1 Drain
6 D1 Drain
7 D2 Drain
8 D2 Drain
AiT Semiconductor Inc. www.ait-ic.com AM9926 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.1 - OCT 2010 RELEASED, MAR 2014 UPDATED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDS, Drain-Source Voltage 20V VGS, Gate-Source Voltage ±12V ID, Drain Current-Continuous 6A ID(100℃), Drain Current-Continuous(TC=100℃) 3.8A IDM, Pulsed Drain Current 25A PD, Maximum Power Dissipation 1.25W TJ, TSTG, Operating Junction and Storage Temperature Range -55℃~150℃ Thermal Characteristic RθJA, Thermal Resistance, Junction-to-Ambient NOTE1 100°C/W Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Surface Mounted on FR4 Board, t ≤ 10 sec.
AiT Semiconductor Inc. www.ait-ic.com AM9926 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.1 - OCT 2010 RELEASED, MAR 2014 UPDATED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,IDS=250μA 20 22 - V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±12V, VDS=0V - - ±100 nA On Characteristics NOTE 2 Gate Threshold Voltage VGS(th) VDS=VGS,IDS=250μA 0.5 - 1.2 V Drain-Source On-state Resistance RDS(ON) VGS=4.5V,IDS=6A - 26 30 mΩ VGS=2.5V,ID=5A - 36 40 Forward Transconductance gFS VDS=5V,ID=6A 20 - - S Dynamic Characteristics NOTE3 Input Capacitance CISS VDS=10V, VGS=0V, F=1.0MHz - 640 - pF Output Capacitance COSS - 140 - Reverse Transfer Capacitance CRSS - 80 - Switching Characteristics NOTE3 Turn-on Delay Time tD(ON) VDD=10V, IDS=1A, VGEN=4.5V, RG=6Ω - 8 - ns Turn-on Rise Time tR - 9 - Turn-Off Delay Time tD(OFF) - 15 - Turn-Off Fall Time tF - 4 - Total Gate Charge QG VDS=10V, ID=3A VGS=4.5V - 10 - nC Gate-Source Charge QGS - 1.5 - Gate-Drain Charge QGD - 1.6 - Drain-Source Diode Characteristics Diode Forward Voltage NOTE2 VSD VGS=0V, IS=1.7A - - 1.2 V Diode Forward Current NOTE1 IS - - 6 A NOTE3: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. NOTE4: Guaranteed by design, not subject to production
AiT Semiconductor Inc. www.ait-ic.com AM9926 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.1 - OCT 2010 RELEASED, MAR 2014 UPDATED - - 5 - TEST CIRCUIT 1. EAS test Circuits 2. Gate charge test Circuit 3. Switch Time Test Circuit
AiT Semiconductor Inc. www.ait-ic.com AM9926 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.1 - OCT 2010 RELEASED, MAR 2014 UPDATED - - 6 - TYPICAL CHARACTERISTICS 1. Output Characteristics 2. Transfer Characteristics 3. RDSON- Drain Current 4. RDSON-Junction Temperature 5. Gate Charge 6. Source- Drain Diode Forward
AiT Semiconductor Inc. www.ait-ic.com AM9926 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.1 - OCT 2010 RELEASED, MAR 2014 UPDATED - - 7 - 7. Capacitance vs. VDS 8. Safe Operation Area 9. BVDSS vs. Junction Temperature 10. VGS(th) vs. Junction Temperature 11. Normalized Maximum Transient Thermal Impedance
AiT Semiconductor Inc. www.ait-ic.com AM9926 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.1 - OCT 2010 RELEASED, MAR 2014 UPDATED - - 8 -
PACKAGE INFORMATION
Dimension in SOP8 (Unit: mm) Symbol Min Max A 1.350 1.750 A1 0.100 0.250 A2 1.350 1.550 b 0.330 0.510 c 0.170 0.250 D 4.700 5.100 E 3.800 4.000 E1 5.800 6.200 e 1.270(BSC) L 0.400 1.270 θ 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM9926 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.1 - OCT 2010 RELEASED, MAR 2014 UPDATED - - 9 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit pr oduct or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are no t designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.