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AiT Semiconductor Inc. www.ait-ic.com AM9435 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.1 - MAR 2010 RELEASED, JUL 2012 UPDATED - - 1 - DESCRIPTION FEATURES The AM9435 is the P -Channel logic enhancement mode power field effect transistor is produced using high cell density, advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications. The AM9435 is available in SOP8 Package
ORDERING INFORMATION
R: Tape & Reel V: Halogen free Package AiT provides all RoHS products Suffix “ V “ means Halogen free Package -30V/-5.8A, R DS(ON)=38mΩ(typ.)@VGS=-10V -30V/-4.0A, RDS(ON)=60mΩ(typ.)@VGS=-4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Available in SOP8 Package APPLICATION Power Management in Note book Portable Equipment DSC LCD Display inverter Battery Powered System DC/DC Converter Load Switch P-CHANNEL MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM9435 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.1 - MAR 2010 RELEASED, JUL 2012 UPDATED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 S Source
2 S Source
3 S Source
4 G Gate
5 D Drain
6 D Drain
7 D Drain
8 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM9435 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.1 - MAR 2010 RELEASED, JUL 2012 UPDATED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃ Unless otherwise noted VDSS, Drain-Source Voltage -30V VGSS, Gate-Source Voltage ±20V ID, Continuous Drain Current, VGS=10VNOTE1 TA=25℃ -5.8A TA=70℃ -4.2A IDM, Pulsed Drain CurrentNOTE2 -12A EAS, Single Pulse Avalanche energy L=0.1mHNOTE3 60mJ PD, Power Dissipation TA=25℃ 2.05W TA=70℃ 1.5W TJ, Operation Junction Temperature -55℃~150℃ TSTG, Storage Temperature Range -55℃~150℃ Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: The value of RΘJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. copper, I a still air environment with TA=25℃. NOTE2: The data tested by pulsed, pulse width ≦ 300uS, duty cycle ≦2 %. NOTE3: The EAS data shows Max. rating. The test condition is VDD=-25V, VGS=-10V, L=0.1mH. THERMAL INFORMATION Parameter Symbol Min Typ Max Unit Thermal Resistance-Junction to Ambient RΘJA 85 °C/W Thermal Resistance-Junction to Case RΘJC 58 °C/W
AiT Semiconductor Inc. www.ait-ic.com AM9435 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.1 - MAR 2010 RELEASED, JUL 2012 UPDATED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25℃ Unless otherwise noted Parameter Symbol Conditions Min Typ Max Unit Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS =0V,ID=-250μA -30 - - V Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1.0 - -2.5 V Gate Leakage Current IGSS VDS=0V,VGS=±20V - - ±100 nA Zero Gate Voltage Drain Current IDSS VDS =-24V,VGS =0V - - -1 µA VDS=-24V,VGS=0V TJ =55°C - - -5 Drain-source On-ResistanceNOTE2 RDS(ON) VGS =-10V,ID=-5.8A - 38 48 mΩ VGS =-4.5V, ID=-4.0A - 60 78 Forward Transconductance GFS VDS=-10V,ID=-5.8A - 6 - S Source-Drain Diode Diode Forward Voltage VSD IS=-2.0A,VGS=0V - -0.7 -1.2 V Continuous Source CurrentNOTE1,4 IS -6 A Dynamic Parameters Total Gate Charge QG VDS=-20V,VGS=-10V ID=-5.8A - 6.2 - nC Gate-Source Charge QGS - 2.5 - Gate-Drain Charge QGD - 3.3 - Input Capacitance CISS VDS=-15V,VGS=0V f=1MHz - 640 - pF Output Capacitance COSS - 270 - Reverse Transfer Capacitance CRSS - 103 - Turn-On Time tD(ON) VDD =15V, VGS=-10V, ID=-5A, RG=3.3Ω - 9.2 - nS tR - 16.5 - Turn-Off Time tD(OFF) - 21.3 - tF - 21.5 - NOTE4: The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
AiT Semiconductor Inc. www.ait-ic.com AM9435 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.1 - MAR 2010 RELEASED, JUL 2012 UPDATED - - 5 - TYPICAL CHARACTERISTICS 1. Output Characteristics 2. Transfer Characteristics 3. Drain Source On Resistance 4. Gate Threshold Voltage 5. Gate Charge 6. Drain Source On Resistance
AiT Semiconductor Inc. www.ait-ic.com AM9435 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.1 - MAR 2010 RELEASED, JUL 2012 UPDATED - - 6 - 7. Source Drain Diode Forward 8. Capacitance 9. Power Dissipation 10. Drain Current 11. Thermal Transient Impedance
AiT Semiconductor Inc. www.ait-ic.com AM9435 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.1 - MAR 2010 RELEASED, JUL 2012 UPDATED - - 7 -
PACKAGE INFORMATION
Dimension in SOP8 (Unit: mm) Symbol Min Max A 1.400 1.750 A1 0.100 0.250 A2 1.300 1.500 b 0.330 0.510 c 0.190 0.250 D 4.800 5.300 E 3.700 4.100 E1 5.790 6.200 e 1.270(BSC) L 0.380 1.270 θ 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM9435 MOSFET -30V P -CHANNEL ENHANCEMENT MODE REV1.1 - MAR 2010 RELEASED, JUL 2012 UPDATED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.