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AiT Semiconductor Inc. www.ait-ic.com AM8958 MOSFET N+P PAIR ENHANCEMENT MODE REV1.0 - JUL 2010 RELEASED – - 1 - DESCRIPTION FEATURES The AM8958 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low inline power loss and resistance to transient are needed. The AM8958 is available in SOP8 Package

ORDERING INFORMATION

R: Tape & Reel V: Green Package AiT provides all Pb free products Suffix “ V “ means Green Package N-Channel  30V /6.8A, RDS(ON) = 23mΩ(typ.)@VGS = 10V  30V /6.5A, RDS(ON) = 34mΩ(typ.)@VGS = 4.5V P-Channel  -30V / -6.5A, R DS(ON) = 35mΩ(typ.)@VGS = -10V  -30V / -4.4A, RDS(ON) = 60mΩ(typ.)@VGS = -4.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Available in SOP8 Package APPLICATION  Power Management in Note book  Portable Equipment  Battery Powered System P-CHANNEL MOSFET N-Channle P-Channle

AiT Semiconductor Inc. www.ait-ic.com AM8958 MOSFET N+P PAIR ENHANCEMENT MODE REV1.0 - JUL 2010 RELEASED – - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 S1 Source1

2 G1 Gate1

3 S2 Source2

4 G2 Gate2

5 D2 Drain2

6 D2 Drain2

7 D1 Drain1

8 D1 Drain1

AiT Semiconductor Inc. www.ait-ic.com AM8958 MOSFET N+P PAIR ENHANCEMENT MODE REV1.0 - JUL 2010 RELEASED – - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃ Unless otherwise specified Symbol Parameter Typical Unit N P VDSS Drain-Source Voltage 30 -30 V VGSS Gate-Source Voltage ±20 ±20 V ID Continuous Drain Current (T J=150℃) T A=25°C 6.8 -6.5 A IDM Pulsed Drain Current 25 -25 A IS Continuous Source Current (Di ode Conduction) 2.3 -2.3 A PD Power Dissipation TA=25°C 2.5 2.8 W TA=70°C 1.6 1.8 W TJ Operation Junction Temperature 150 ℃ TSTG Storage Temperature Range -55~150 ℃ Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL INFORMATION Parameter Symbol Min Typ Max Unit Thermal Resistance-Junction to Ambient R θJA 5 0 - 8 0 ℃ / W

AiT Semiconductor Inc. www.ait-ic.com AM8958 MOSFET N+P PAIR ENHANCEMENT MODE REV1.0 - JUL 2010 RELEASED – - 4 -

ELECTRICAL CHARACTERISTICS

TA = 25℃ Unless otherwise specified Parameter Symbol Conditions Min Typ Max Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250μA N3 0 - - V VGS=0V,ID=-250μA P- 3 0 - - Gate Threshold Voltage VGS(th) V DS=VGS,ID=250μA N1 . 0 - - 2 . 5 V P- 1 . 0 - - 2 . 5 Gate Leakage Current IGSS V DS=0V,VGS=±20V N- - ± 1 0 0 nA P- - ± 1 0 0 Zero Gate Voltage Drain Current IDSS VDS=24V,VGS=0V N- - 1 µA VDS=-24V,VGS=0V P- - - 1 VDS=24V,VGS=0V TJ=80°C N- - 3 0 VDS=-24V,VGS=0V TJ=80°C P- - - 3 0 On-State Drain Current ID(ON) VDS≧5V ,VGS=10V N 30 - - A VDS≦-5V ,VGS=-10V P- 3 0 - - Drain-source On-Resistance RDS(ON) VGS=10V,ID=6.8A N - 23 30 mΩ VGS=-10V,ID=-6.5A P- 3 5 5 0 VGS=4.5V,ID=6.5A N- 3 4 4 2 VGS=-4.5V,ID=-5A P - 60 85 Source-Drain Doide Dynamic Parameters Total Gate Charge Qg N-Channel VDS=15V, VGS=10V ID=6.0A P-Channel V DS=-15V, VGS=-10V ID=-5.0A N- 1 3 2 0 nC P- 1 5 2 5 Gate-Source Charge QGS N- 2 . 3 - P- 4 . 0 - Gate-Drain Charge QGD N- 2 . 0 - P- 2 . 0 - Turn-On Time td(on) N-Channel VDD=15V, RL=150Ω ID=1.0A, VGEN=10V RG=6Ω P-Channel V DD=-15V, RL=150Ω ID=-1.0A, VGEN=-10V RG=6Ω N- 6 . 0 1 2 nS P- 7 . 0 1 5 Tr N- 1 4 2 5 P- 1 0 2 0 Turn-Off Time td(off) N- 3 0 6 0 P- 4 0 8 0 Tf N- 5 1 0 P- 2 0 4 0 NOTE: 1. Pulse test: pulse width <= 300us, duty cycle<= 2% 2. Static parameters are based on package level with recommended wire-bonding

AiT Semiconductor Inc. www.ait-ic.com AM8958 MOSFET N+P PAIR ENHANCEMENT MODE REV1.0 - JUL 2010 RELEASED – - 5 - TYPICAL CHARACTERISTICS N-Channel 1. Output Characteristics 2. Drain Source On Resistance 3. Drain Source On Resistance 4. Gate Threshold Voltage 5. Gate Charge 6. Drain Source On Resistance

AiT Semiconductor Inc. www.ait-ic.com AM8958 MOSFET N+P PAIR ENHANCEMENT MODE REV1.0 - JUL 2010 RELEASED – - 6 - 7. Source Drain Diode Forward 8. Capacitance 9. Power Dissipation 10. Drain Current 11. Thermal Transient Impedance

AiT Semiconductor Inc. www.ait-ic.com AM8958 MOSFET N+P PAIR ENHANCEMENT MODE REV1.0 - JUL 2010 RELEASED – - 7 - P-Channel 12. Output Characteristics 13. Drain Source On Resistance 14. Drain Source On Resistance 15. Gate Threshold Voltage 16. Gate Charge 17. Drain Source On Resistance

AiT Semiconductor Inc. www.ait-ic.com AM8958 MOSFET N+P PAIR ENHANCEMENT MODE REV1.0 - JUL 2010 RELEASED – - 8 - 18. Source Drain Diode Forward 19. Capacitance 20. Power Dissipation 21. Drain Current 22. Thermal Transient Impedance

AiT Semiconductor Inc. www.ait-ic.com AM8958 MOSFET N+P PAIR ENHANCEMENT MODE REV1.0 - JUL 2010 RELEASED – - 9 -

PACKAGE INFORMATION

Dimension in SOP-8 (Unit: mm) Symbol Min Max A 1.350 1.750 A1 0.100 0.250 A2 1.350 1.550 b 0.330 0.510 c 0.170 0.250 D 4.700 5.100 E 3.800 4.000 E1 5.800 6.200 e 1.270(BSC) L 0.400 1.270 θ 0° 8°

AiT Semiconductor Inc. www.ait-ic.com AM8958 MOSFET N+P PAIR ENHANCEMENT MODE REV1.0 - JUL 2010 RELEASED – - 10 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circu it product or service without n otice, and advises its customers to obtain the latest version of relevant information to verify, before placin g orders, that the information being relied on is current. AiT Semiconductor Inc.'s integrat ed circuit products are not de signed, intended, authorized, or warranted to be suitable for use in life support applications, devices or sy stems or other critical applications. Use of AiT products in such applications is understood to be fully at the r i s k o f t h e c u s t o m e r . A s u s e d h e r e i n m a y involve potential risks of death, personal injury, or servere p r o p e r t y , o r e n v i r o n m e n t a l d a m a g e . I n o r d e r t o minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc. assumes to no liability to customer prod uct design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.