AM83135-001 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

.400 x .400 2NLFL (S042) hermetically sealed February 3, 1997 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .10:1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .POUT = 1.0 W MIN. WITH 5.2 dB GAIN

DESCRIPTION

The AM83135-001 device is a medium power sili- con bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and tempera- tures and can withstand a 10:1 output VSWR. Low RF thermal resistance, refractory/gold metal- lization, and automatic wire bonding techniques ensure high reliability and product consistency. The AM83135-001 is supplied int the AMPAC Hermetic/Ceramic package with internal In- put/Output impedance matching circuitry, and is intended for military and other high reliability ap- PIN CONNECTION ABSOLUTE MAXIMUM RATINGS (T case =2 5°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤100°C) 11.5 W IC Device Current* 0.45 A VCC Collector-Supply Voltage* 34 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 13.0 °C/W *Applies only to rated RF amplifier operation AM83135-001 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA BRANDING 83135-1 ORDER CODE AM83135-001

ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. ηc f= 3.1 — 3.5GHz P IN = 0.3W V CC = 30V 27 35 — % Note: Pulse Width = 100 µS Duty Cycle = 10% STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 1mA I E = 0mA 45 — — V BV EBO IE = 1mA I C = 0mA 3.5 — — V BV CER IC = 1mA R BE = 10Ω 45 — — V ICES VBE = 0V V CE = 30V ——1 m A hFE VCE = 5V I C = 100mA 1 0 ——— DYNAMIC AM83135-001

PIN = 0.3 W VCC = 30 V ZO = 50 ohms PIN = 0.3 W VCC = 30 V ZO = 50 ohms H L ZIN FREQ. ZIN (Ω )Z CL (Ω ) L H ZCL ZCL IMPEDANCE DATA ZIN AM83135-001

All dimensions are in inches. Substrate material: .025 thick AI2O 3 C1 : 1500 pF RF Feedthrough C2 : 100 MF Electrolytic C3 : 100 pF Chip L1 : No. 26 Wire, 4 Turn .062 I.D. L2 : Printed RF Choke TEST CIRCUIT AM83135-001

Ref.: Dwg. No. 12-0213 rev. A UDCS No. 1011416 PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.  1997 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland Taiwan - Thailand - United Kingdom - U.S.A. AM83135-001