AM82731-050 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
RF & MICROWAVE TRANSISTORS .400 x .400 2LFL (S036) hermetically sealed .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .RUGGEDIZED VSWR 3:1 @ 1 dB OVER- DRIVE .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .POUT = 50 W MIN. WITH 6 dB GAIN
DESCRIPTION
The AM82731-050 device is a high power silicon bipolar NPN transistor specifically designed for S- Band radar pulsed output and driver applications. The device is capable of operation over a wde range of pulse widths, duty cycles and tempera- tures and can withstand a 3:1 output VSWR with a +1 dB input overdrive. Low RF thermal resist- ance, refractory/gold metallization, and compu- terized automatic wire bonding techniques ensure high reliability and product consistency. The AM82731-050 is supplied in the AMPAC Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability ap- plications. PIN CONNECTION BRANDING 82731- 50 ORDER CODE AM82731 -050 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 50°C) 167 W IC Device Current* 8 A VCC Collector-Supply Voltage* 46 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 1.2 °C/W *Applies only to rated RF amplifier opera tion AM82731-050 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value UnitMin. Typ. Max. POUT f= 2700 — 3100MHz P IN = 12.5W V CC = 40V 50 56 — W ηcf = 2700 — 3100MHz P IN = 12.5W V CC = 40V 30 35 — % G P f= 2700 — 3100MHz P IN = 12.5W V CC = 40V 6.0 6.5 — dB Note: Pulse Width = 100 µ S Duty Cycle = 10% STATIC Symbol Test Conditions Value UnitMin. Typ. Max. BV CBO IC = 25mA I E = 0mA 55 — — V BV EBO IE = 5mA I C = 0mA 3.5 — — V BV CER IC = 25mA R BE = 10Ω 55 — — V ICES VCE = 40V — — 20 mA hFE VCE = 5V I C = 3 A 3 0 ——— DYNAMIC TYPICAL PERFORMANCE 2.7 2.9 3.1 COLLECTOR EFFICIENCY vs FREQUENCY C O L L E C T O R E F F I C I E N C Y FREQUENCYFREQUENCY
50 Watts Ouput
@ 100 µS 10% Pulse VCC = 40 Volts Upper Window Mean Lower Window COLLECTOR EFFICIENCY vs FREQUENCY 39.5 38.036.4 4.00 5.00 6.00 7.00 8.00 2.7 2.9 3.1 GAIN vs FREQUENCY G A I N d B FREQUENCYFREQUENCY
50 Watts Output
@ 100 µS 10% Pulse VCC = 40 Volts Upper Window Mean Lower Window GAIN vs FREQUENCY 6.93 7.19 6.43 AM82731-050
PIN = 12.5 W VCC = 40 V Z0 = 50 ohms ZIN ZCL L H L H IMPEDANCE DATA FREQ. Z IN (Ω )Z CL (Ω ) ZIN ZCL TEST CIRCUIT AM82731-050
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A AM82731-050