AM82731-025 STMICROELECTRONICS | Alldatasheet
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Technical content
RF & MICROWAVE TRANSISTORS .400 x .400 2LFL (S036) hermetically sealed .LOW PARASITIC, DOUBLE LEVEL MET- AL DESIGN .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .3:1 VSWR @ 1 dB OVERDRIVE .LOW RF THERMAL RESISTANCE .INPUT/OUTPUT IMPEDANCE MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .POUT = 25 W MIN. WITH 6.2 dB GAIN
DESCRIPTION
The AM82731-025 device is a high power silicon bi- polar NPNtransistor specifically designed for S-Band radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 3:1 output VSWR with a +1dB input over drive. Low RF thermal resistance, refrac- tory/gold metallization, and automatic wire bonding techniques ensure high reliability and product con- sistency (including phase characteristics). The AM82731-025 is supplied in the Hermetic Met- al/Ceramic package with internal Input/Output im- pedance matching circuitry, and is intended for mili- tary and other high reliability applications. PIN CONNECTION BRANDING 82731- 25 ORDER CODE AM82731 -025 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 50°C) 100 W Ic Device Current* 4 A VCC Collector-Supply Voltage* 46 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 2.0 °C/W *Applies only to rated RF amplifier operation AM82731-025 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value UnitMin. Typ. Max. POUT f= 2.7 — 3.1GHz P IN = 6.0W V CC = 40V 25 30 — W η cf = 2.7 — 3.1GHz P IN = 6.0W V CC = 40V 30 36 — % Note: Pulse Width = 100 µ Sec Duty Cycle = 10% STATIC Symbol Test Conditions Value UnitMin. Typ. Max. BV CBO IC = 15mA I E = 0mA 55 — — V BV EBO IE = 2mA I C = 0mA 3.5 — — V BV CER IC = 15mA R BE = 10Ω 55 — — V ICES VCE = 0V V BE = 40V — — 10 mA hFE VCE = 5V I C = 1.5A 30 — — — DYNAMIC TYPICAL PERFORMANCE TYPICAL BROADBAND PERFORMANCE AM82731-025
All dimensions are in inches. Sustrate material: .025 thick Al2O 3 (Er = 9.6) C1 : 22 pF Chip Capacitor C2 : 1500 pF RF Feedthrough L1 : No. 26 Wire, 2 Turn, 0.08 Inch I.D. L2 : No. 26 Wire, 2 Turn, 0.08 Inch I.D. TEST CIRCUIT TYPICAL INPUT IMPEDANCES TYPICAL COLLECTOR LOAD IMPEDANCES PIN = 6.0 W VCC = 40 V Normalized to 50 ohms FREQ. Z IN(Ω )Z CL(Ω ) ZIN ZCL IMPEDANCE DATA AM82731-025
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A AM82731-025