AM82731-006 STMICROELECTRONICS | Alldatasheet
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Technical content
RF & MICROWAVE TRANSISTORS .400 x .400 2NLFL (S042) hermetical ly sealed .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .5:1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT IMPEDANCE MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .BANDWIDTH = 400 MHz
DESCRIPTION
The AM82731-006 device is a medium power silicon bipolar NPN transistor specifically designed for S- Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 5:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and auto- matic wire bonding techniques ensure high reliability and product consistency. The AM82731-006 is supplied in the hermetic met- al/ceramic package with internal input/output imped- ance matching circuitry, and is intended for military and other high reliability applications. PIN CONNECTION BRANDING 82731- 6 ORDER CODE AM 82731-006 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤100°C) 40 W Ic Device Current* 1.8 A VCC Collector-Supply Voltage* 34 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C AM82731-006 1. Collector 3. Emitter 2. Base 4. Base R TH (j-c) Junction-Case Thermal Resistance 3.75 °C/W *Applies only to rated RF amplifier opera tion THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value UnitMin. Typ. Max. ηC f= 2.7 — 3.1GHz P IN = 1.5W V CC = 30V 27 32 — % Note: Pulse Width = 100µ S Duty Cycle = 10% STATIC Symbol Test Conditions Value UnitMin. Typ. Max. BV CBO IC C= 5mA I E = 0mA 50 — — V BV EBO IE = 1mA I C = 0mA 3.5 — — V BV CER IC = 5mA R BE = 10Ω 50 — — V ICES VCE = 30V — — 4 mA hFE VCE = 5V I C = 500mA 10 — — — DYNAMIC TYPICAL PERFORMANCE TYPICAL BROADBAND PERFORMANCE AM82731-006
C3 : 100 pF Chip Capacitor L1 : No. 32 Wire, 0.062 Inch Long L2 : Printed RF Choke All dimensions are in inches. Substrate material: .025 thick Al 2O 3 (Er= 9.6) C1 : 1500 pF RF Feedthru C2 : 100 µF Electrolytic TEST CIRCUIT TYPICAL INPUT IMPEDANCES TYPICAL COLLECTOR LOAD IMPEDANCES PIN = 1.5W VCC = 30V Normalized to 50 ohms ZIN ZCL L M H H M L ZIN ZCL FREQ. Z IN(Ω )Z CL (Ω ) IMPEDANCE DATA AM82731-006
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A AM82731-006