AM82223-018 ADPOW | Alldatasheet
Document overview
- Manufacturer or author: Unknown
- PDF pages: 4
Technical content
Advanced Power Technology reserves the right to change, without notice, the speci fications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DESCRIPTION:DESCRIPTION: The AM82223 - 018 is a common base, silicon NPN bipolar transistor designed for high gain and efficiency in hi - rel aerospace telemetry applications in the 2.2 - 2.3 GHz frequency range. It incorporates internal inpu t and output impedance matching structures along with a rugged, emitter - site ballasted overlay die geometry capable of withstanding ∞∞ :1 load mismatch at any phase angle under full rated operating conditions.. The AM82223 - 018 is provided in the industry - sta ndard AMPAC metal/ceramic hermetic package. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25 °°C) Symbol Parameter Value Unit P DISS Power Dissipation 58.3 W IC Device Current* 3.0 A V CC Collector - Supply Voltage* 28 V T J Junctio n Temperature 200 °°C T STG Storage Temperature - 65 to +200 °°C Thermal DataThermal Data R TH(J - C) Junction - case Thermal Resistance 3.0 °°C/W FeaturesFeatures
- REFRACTORY/GOLD METALLIZATION
- EMITTER SITE BALLASTED
- ∞∞ :1 VSWR CAPABILITY AT RATED CONDITIONS
- LOW THERMAL RESISTANCE
- INPUT/OUTPUT MATCHING
- OVERLAY GEOMETRY
- METAL/CERAMIC HERMETIC PACKAGE
- P OUT = 18 W MINIMUM WITH G P = 6.5 dB GAIN MINIMUM
- C OMMON BASE CONFIGURATION RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA 18936 - 1013 PHONE: (215) 631 - 9840 FAX: (215) 631 - 9855
Advanced Power Technology reserves the right to change, without notice, the speci fications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25 °°C)C) STATICSTATIC Value Symbol Test Conditions M in. Typ. Max. Unit BV CBO IC = 5 mA IE = 0 mA 45 --- --- V BV EBO IE = 1 mA IC = 0 mA 3.5 --- --- V ICBO V CB = 24 V --- --- 2.0 mA h FE V CE = 5 V IC = 2 A 30 --- 300 --- DYNAMICDYNAMIC Value Symbol Test Conditions Min. Typ. Max. Unit P OUT f = 2.2 - 2.3 GHz P IN = 4.0W V CC =24V 18 --- --- W ηηc f = 2.2 - 2.3 GHz P IN = 4.0W V CC =24V 40 --- --- % G P f = 2.2 - 2.3 GHz P IN = 4.0W V CC =24V 6.5 --- --- dB
Advanced Power Technology reserves the right to change, without notice, the speci fications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. TEST CIRCUITTEST CIRCUIT
Advanced Power Technology reserves the right to change, without notice, the speci fications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA