AM82223-010 STMICROELECTRONICS | Alldatasheet
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August 31, 1994 TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS .400 x .400 2NLFL (S042) hermetically sealed .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .∞ :1 VSWR CAPABILITY AT RATED CONDITIONS .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .POUT = 9 W MIN. WITH 6.5 dB GAIN
DESCRIPTION
The AM82223-010 is a common base, silicon NPN bipolar transistor designed for high gain and efficiency in the 2.2 − 2.3 GHz frequency range. Suitable for hi-rel aerospace telemetry applica- tions, the AM82223-010 is provided in the indus- try-standard AMPAC™ metal/ceramic hermetic package and incorporates internal input and out- put impedance matching structures along with a rugged, emitter-site ballasted overlay die geome- try. AM82223-010 is capable of withstanding ∞ :1 load mismatch at any phase angle under full rated operating conditions. PIN CONNECTION BRANDING 82223-10 ORDER CODE AM82223-010 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 75˚C) 28 W IC Device Current* 1.2 A VCC Collector-Supply Voltage* 26 V TJ Junction Temperature 200 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance 4.4 °C/W *Applies only to rated RF amplifier operation NOTE: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot Junction Temperature at rated RF operating conditions. AM82223-010 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f = 2.2 − 2.3 GHz P IN = 2.0 W V CC = 24 V 9.0 — — W ηcf = 2.2 − 2.3 GHz P IN = 2.0 W V CC = 24 V 40 — — % PG f = 2.2 − 2.3 GHz P IN = 2.0 W V CC = 24 V 6.5 — — dB STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 5 mA I E = 0 mA 45 — — V BV CER IC = 10 mA R BE = 10 Ω 45 — — V BV EBO IE = 1 mA I C = 0 mA 3.5 — — V ICBO VCB = 24 V — — 1 mA hFE VCE = 5 V I C = 750 mA 20 — 300 — DYNAMIC AM82223-010
Ref.: Dwg. No. 12-0213 rev. A PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. ©1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. AM82223-010