AM8204 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AM8204 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUN 2015 RELEASED - - 1 - DESCRIPTION FEATURES The AM8204 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. AM8204 is available in a SOT-26 package. VDS= 20V, ID= 6A Typ.RDS(ON) = 17mΩ @ VGS= 4.5V Typ.RDS(ON) = 22mΩ @ VGS= 2.5V ESD Rating: 2000V HBM High Power and current handing capability Lead free product is acquired Surface Mount Package Available in a SOT-26 package. ORDERING INFORMATION APPLICATION Package Type Part Number SOT-26 E6 AM8204E6R AM8204E6VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package PWM application Load switch PIN DESCRIPTION Schematic diagram
AiT Semiconductor Inc. www.ait-ic.com AM8204 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUN 2015 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 S1 Source
2 D1/D2 Drain
3 S2 Source
4 G2 Gate
5 D1/D2 Drain
6 G1 Gate
AiT Semiconductor Inc. www.ait-ic.com AM8204 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUN 2015 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDS, Drain-Source Voltage 20V VGS, Gate-Source Voltage ±12V ID, Drain Current-Continuous 6A IDM, Drain Current-Pulsed NOTE1 30A PD, Maximum Power Dissipation 1.25W TJ,TSTG, Operating Junction and Storage Temperature Range -55℃~150℃ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS Parameter Symbol Limit Units Thermal Resistance, Junction-to-Ambient NOTE2 RθJA 100 °C/W
AiT Semiconductor Inc. www.ait-ic.com AM8204 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUN 2015 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250μA 20 - - V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±10V, VDS=0V - - ±10 μA On Characteristics NOTE3 Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.45 0.7 1.0 V Drain-Source On-state Resistance RDS(ON) VGS=4.5V,ID=6A - 17 24 mΩ VGS=2.5V,ID=5A - 22 30 Forward Transconductance gFS VDS=5V,ID=6A - 20 - S Dynamic CharacteristicsNOTE4 Input Capacitance CISS VDS=10V, VGS=0V, F=1.0MHz - 650 - pF Output Capacitance COSS - 140 - Reverse Transfer Capacitance CRSS - 60 - Switching Characteristics NOTE4 Turn-on Delay Time tD(ON) VDD=10V, RL=1.5Ω, VGS=5V, RGEN=3Ω - 0.5 - ns Turn-on Rise Time tR - 1 - Turn-off Delay Time tD(OFF) - 12 - Turn-off Fall Time tF - 4 - Total Gate Charge QG VDS=10V, ID=6A VGS=4.5V - 8 - nC Gate-Source Charge QGS - 2.5 - Gate-Drain Charge QGD - 3 - Drain-Source Diode Characteristics Diode Forward Voltage NOTE3 VSD VGS=0V, IS=1A, - - 1.2 V Diode Forward Current NOTE2 IS - - 6 A NOTE1: Repetitive Rating: Pulse width limited by maximum junction temperature. NOTE2: Surface Mounted on FR4 Board, t ≤ 10 sec. NOTE3: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. NOTE4: Guaranteed by design, not subject to production
AiT Semiconductor Inc. www.ait-ic.com AM8204 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUN 2015 RELEASED - - 5 - TYPICAL CHARACTERISTICS 1. Power Dissipation 2. Safe Operation Area 3. Output Characteristics 4. Drain-Source On-Resistance 5. Transfer Characteristics 6. Drain-Source On-Resistance
AiT Semiconductor Inc. www.ait-ic.com AM8204 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUN 2015 RELEASED - - 6 - 7. RDSON vs. VGS 8. Capacitance vs. VDS 9. Gate Charge 10. Source- Drain Diode Forward 11. Normalized Maximum Transient Thermal Impedance
AiT Semiconductor Inc. www.ait-ic.com AM8204 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUN 2015 RELEASED - - 7 - DETAILED INFORMATION 1. Switching Test Circuit 2. Switching Waveforms
AiT Semiconductor Inc. www.ait-ic.com AM8204 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUN 2015 RELEASED - - 8 -
PACKAGE INFORMATION
Dimension in SOT-26(Unit: mm) Symbol Min Max A 1.050 1.250 A1 0.000 0.100 A2 1.050 1.150 b 0.300 0.500 c 0.100 0.200 D 2.820 3.020 E 1.500 1.700 E1 2.650 2.950 e 0.950(BSC) E1 1.800 2.000 L 0.300 0.600 θ 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM8204 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - JUN 2015 RELEASED - - 9 - IMPORTANT NOTICE AiT Semiconduct or Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before p lacing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other cri tical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.