AM81719-030 STMICROELECTRONICS | Alldatasheet
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Technical content
RF & MICROWAVE TRANSISTORS .400 SQ 2LFL (M147) hermetically sealed .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .P OUT = 28 W MIN. WITH 6.7 dB GAIN
DESCRIPTION
The AM81719-030 is a high power silicon NPN bipolar transistor designed for Class C, CW com- munications and telemetry applications in the 1.75 - 1.85 GHz frequency range. An emitter site ballasted refractory/gold overlay die geometry computerized automatic wire bonding is employed to ensure long term reliability and product consistency. AM81719-030 is supplied in the industry-standard AMPAC hermetic metal/ceramic package. PIN CONNECTION BRANDING 81719-030 ORDER CODE AM81719 -030 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* 67.3 W IC Device Current* 2.67 A VCC Collector-Supply Voltage* 28 V TJ Junction Temperature 200 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 2.6 °C/W *Applies only to rated RF amplifier operation AM81719-030 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 1.75 — 1.85GHz P IN = 6.0W V CC = 28V 28 — — W ηcf = 1.75 — 1.85GHz P IN = 6.0W V CC = 28V 40 — — % G P f= 1.75 — 1.85GHz P IN = 6.0W V CC = 28V 6.7 — — dB STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 10mA I E = 0mA 45 — — V BV EBO IE = 10mA I C = 0mA 3.0 — — V BV CES IC = 10mA 45 — — V ICES VBE = 0V V CE = 28V — — 5 mA hFE VCE = 5V I C = 2mA 15 — 150 — DYNAMIC TYPICAL PERFORMANCE POWER OUTPUT & COLLECTOR EFFICENCY vs POWER INPUT AM81719-030
Ref. Dwg. No. C125450A All dimensions are in inches. TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE PIN = 6.0 W VCC = 28 V Normalized to 50 ohms ZIN ZCL L H H L IMPEDANCE DATA ZIN ZCL FREQ. Z IN (Ω )Z CL (Ω ) AM81719-030
Ref.: Dwg. No. 12-0147 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A AM81719-030