AM81214-030 STMICROELECTRONICS | Alldatasheet

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RF & MICROWAVE TRANSISTORS .310 x .310 2LFL (S064) hermetically sealed .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .RUGGEDIZED VSWR ∞ :1 .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .POUT = 26 W MIN. WITH 7.2 dB GAIN

DESCRIPTION

The AM81214-030 device is a high power transistor specifically designed for L-Band Radar pulsed driver applications. The device is capable of operation over a wide range of pulse widths, duty cycles and tempera- tures and is capable of withstanding∞ :1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bond- ing techniques ensure high reliability and product consistency. The AM81214-030 is supplied in the IMPAC Her- metic Metal/Ceramic package with internal Input/Output matching structures. PIN CONNECTION BRANDING 81214- 30 ORDER CODE AM81214 -030 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 100°C) 63 W IC Device Current* 2.75 A VCC Collector-Supply Voltage* 32 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 2.4 °C/W *Applies only to rated RF amplifier opera tion AM81214-030 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA

ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value UnitMin. Typ. Max. PIN f= 1215 — 1400MHz P IN = 5W Peak V CC = 28V 26 36 — W ηcf = 1215 — 1400MHz P IN = 5W Peak V CC = 28V 45 49 — % G P f= 1215 — 1400MHz P IN = 5W Peak V CC = 28V 7.2 8.5 — dB Note: Pulse Width = 1000 µ S Duty Cycle = 10% STATIC Symbol Test Conditions Value UnitMin. Typ. Max. BV CBO IC = 10mA I E = 0mA 55 — — V BV EBO IE = 1mA I C = 0mA 3.5 — — V BV CER IC = 20mA R BE = 10Ω 55 — — V ICES VBE = 0V V CE = 28V — — 5 mA hFE VCE = 5V I C = 1A 15 — 150 — DYNAMIC AM81214-030

RELATIVE POWER OUTPUT & COLLECTOR EFFICIENCY vs COLLECTOR VOLTAGE TYPICAL BROADBAND POWER AMPLIFIER MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH AM81214-030

PIN = 5.0 W VCC = 28 V ZO = 50 Ohms PIN = 5.0 W VCC = 28 V ZO = 50 Ohms IMPEDANCE DATA ZIN ZCL FREQ. Z IN (Ω )Z CL (Ω ) AM81214-030

.318/ .306 TEST CIRCUIT AM81214-030

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A AM81214-030