AM81214-006 STMICROELECTRONICS | Alldatasheet
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RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS .310 x .310 2LFL (S064) hermetically sealed .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .5:1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .POUT = 5.5 W MIN. WITH 10 dB GAIN
DESCRIPTION
The AM81214-006 device is a high power Class C transistor specifically designed for L-Band Ra- dar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and tempera- tures and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. AM81214-006 is supplied in the grounded IM- PAC Hermetic Metal/Ceramic package with in- ternal input/output matching structures. PIN CONNECTION BRANDING 81214-6 ORDER CODE AM81214-6 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 100°C) 16.7 W IC Device Current* 0.82 A VCC Collector-Supply Voltage* 32 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 9.0 °C/W *Applies only to rated RF amplifier operation AM81214-006 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. ηcf = 1.2 — 1.4 GHz P IN = 0.5 W V CC = 28 V 47 52 — % G P f= 1.2 — 1.4 GHz P IN = 0.5 W V CC = 28 V 10 10.5 — dB Note: Pulse Width = 1000 µS Duty Cycle = 10% STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 1m A I E = 0m A 48 — — V BV CER IC = 5m A R BE = 10Ω 48 — — V BV EBO IE = 1m A I C = 0m A 3.5 — — V ICES VBE = 0V V CE = 28 V —— 5 0 0 µA hFE VCE = 5V I C = 500 mA 15 — 300 — DYNAMIC TYPICAL PERFORMANCE TYPICAL BROADBAND PERFORMANCE AM81214-006
All dimensions are in inches. Substrate material: .025 thick AI2O 3 C1 : 0.2—2.5 pF Johanson Gigatrim Capacitor C2 : 0.2—2.5 pF Johanson Gigatrim Capacitor C3 : 1500 pF Filtercon Feedthrough C4 : 0.1 µF, Ceramic Capacitor C5 : 100 µF, Electrolytic Capacitor C6 : 100 pF Chip Capacitor L : No. 26 Wire, 4 Turn .062 I.D. PIN = 0.5 W VCC = 28 V Normalized to 50 ohms IMPEDANCE DATA ZIN TYPICAL INPUT IMPEDANCE ZCL TYPICAL COLLECTOR LOAD IMPEDANCE FREQ. ZIN(Ω )Z CL (Ω ) AM81214-006
Ref.: Dwg. No. 12-0221 rev. A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron- ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. AM81214-006