AM80814-005 STMICROELECTRONICS | Alldatasheet
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Technical content
RF & MICROWAVE TRANSISTORS .310 x .310 2LFL (S064) hermetically sealed .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .5:1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .P OUT = 5.0 W MIN. WITH 8.5 dB GAIN
DESCRIPTION
The AM80814-005 device is a high power Class C transistor specifically designed for L-Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and tempera- tures and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low thermal re- sistance and computerized automatic wire bonding techniques ensure high reliability and product con- sistency. The AM80814-005 is supplied in the IMPAC Her- metic Metal/Ceramic package with internal Input/Output matching structures. PIN CONNECTION BRANDING 80814-5 ORDER CODE AM80814 -005 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 100°C) 23 W IC Device Current* 1.0 A VCC Collector-Supply Voltage* 28 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature - 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 6.5 °C/W *Applies only to rated RF amplifier operation AM80814-005 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value UnitMin. Typ. Max. POUT f= 850 — 1400MHz P IN = 0.7W V CC = 28V 5.0 5.7 — W ηcf = 850 — 1400MHz P IN = 0.7W V CC = 28V 35 40 — % G P f= 850 — 1400MHz P IN = 0.7W V CC = 28V 8.5 9.0 — dB Note: Pulse Width = 120 µS Duty Cycle = 4% STATIC Symbol Test Conditions Value UnitMin. Typ. Max. BV CBO IC = 1mA I E = 0mA 48 — — V BV EBO IE = 1mA I C = 0mA 3.5 — — V BV CER IC = 5mA R BE = 10Ω 48 — — V ICES VBE = 0V V CE = 28V — — 500 mA hFE VCE = 5V I C = 250mA 30 — 300 — DYNAMIC TYPICAL PERFORMANCE 800 950 1100 1250 1400 P O W E R O U T P U T FREQUENCY (MHz) C O L L E C T O R E F F I C I E N C Y FREQUENCY (MHz) POWER OUTPUT & COLLECTOR EFFICIENCY vs FREQUENCY PW = 120 µS DC = 4% VCC = 28 V PIN 0.7 0.6 0.5 (Watts) PIN = 0.5, 0.6W PIN = 07W AM80814-005
PIN = 0.7 W VCC = 28 V Normalized to 50 ohms ZIN ZCL L L H H IMPEDANCE DATA ZIN ZCL FREQ. Z IN (Ω )Z CL (Ω ) AM80814-005
All dimensions are in inches. Substrate material: .025 thick AI2O 3 C1 : 100 µF Electrolytic Capacitor, 63V C2 : .1 µF Ceramic Capacitor C3 : Feedthrough Bypass SC! 712-022 C4 : .6 — 4.5 pF, 2 pls, Johanson Gigatrim Capacitor C5 : .6 — 4.5 pF, 2 pls, Johanson Gigatrim Capacitor C6 : 100 pF Chip Capacitor L1 : No. 26 Wire, 4 Turn L2 : No. 26 Wire, 4 Turn TEST CIRCUIT AM80814-005
.318/ .306 PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A AM80814-005