AM80610-030 STMICROELECTRONICS | Alldatasheet
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Technical content
RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS .400 x .400 2NLFL (S042) hermetically sealed .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .INPUT/OUTPUT MATCHING .METAL/CERAMIC HERMETIC PACKAGE .POUT = 30 W MIN. WITH 8.5 dB GAIN
DESCRIPTION
The AM80610-030 is a high power, common base NPN silicon bipolar device optimized for CW operation in the 620 - 960 MHz frequency range. AM80610-030 utilizes a rugged, overlay, emitter- ballasted L-Band die geometry to achieve high gain and collector efficiency and is suitable for driver or output stage use in Class C power am- plifiers. Typical applications include military com- munications, ECM, and test equipment. The AM80610-030 is provided in the industry- standard, metal/ceramic AMPAC hermetic package. PIN CONNECTION BRANDING 80610-30 ORDER CODE AM80610-030 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 50°C) 57 W IC Device Current* 3.0 A VCC Collector-Supply Voltage* 32 V TJ Junction Temperature 200 °C TSTG Storage Temperature − 65 to +200 °C R TH(j-c) Junction-Case Thermal Resistance* 2.6 °C/W *Applies only to rated RF amplifier operation AM80610-030 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 620 − 960 MHz P IN = 4.2 W V CC = 28 V 3 0——W ηcf = 620 − 960 MHz P IN = 4.2 W V CC = 28 V 50 — — % G P f= 620 − 960 MHz P IN = 4.2 W V CC = 28 V 8.5 — — dB STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 20 mA I E = 0m A 55 — — V BV EBO IE = 2m A I C = 0m A 3.5 — — V BV CER IC = 40 mA R BE = 10 Ω 55 — — V ICES VBE = 0V V CE = 28 V — — 10 mA hFE VCE = 5V I C = 2A 15 — 150 — DYNAMIC TEST CIRCUIT Dwg.No. C127464 AM80610-030
Ref.: Dwg. No. 12-0213 rev. A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron- ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. AM80610-030