AM7520

AM7520 AITSEMI | Alldatasheet

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AiT Semiconductor Inc. www.ait-ic.com AM7520 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2016 RELEASED - - 1 - DESCRIPTION FEATURES The AM7520 is available in DFN8(3.3x3.3) package.

ORDERING INFORMATION

(3.3x3.3) AM7520J8R AM7520J8VR Note V: Halogen free Package R: Tape & Reel SPQ: 3,000pcs/ Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package  30V/50A, RDS(ON) = 1.8mΩ(max.) @ VGS =10V RDS(ON) = 3.1mΩ(max.) @ VGS =4.5V  100% UIS + RG Tested  Avalanche Rated  Reliable and Rugged  Available in DFN8(3.3x3.3) package. APPLICATION  Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. PIN DESCRIPTION N-Channel MOSFET

AiT Semiconductor Inc. www.ait-ic.com AM7520 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2016 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function

1 S Source

2 S Source

3 S Source

4 G Gate

5 D Drain

6 D Drain

7 D Drain

8 D Drain

AiT Semiconductor Inc. www.ait-ic.com AM7520 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2016 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless Otherwise Noted VDSS, Drain-Source Voltage 30V VGSS, Gate-Source Voltage ±20V TJ, Maximum Junction Temperature 150°C TSTG, Storage Temperature Range -55°C~ 150°C IS, Diode Continuous Forward Current TC=25°C 50A NOTE1 ID, Continuous Drain Current TC=25°C 50A NOTE1 TC=100°C 50A IDM, Pulsed Drain Current TC=25°C 200A NOTE2 PD, Maximum Power Dissipation TC=25°C 62.5W TC=100°C 25W RθJC, Thermal Resistance-Junction to Case Steady State 2°C/W ID, Continuous Drain Current TA=25°C 24A TA=70°C 19A PD, Maximum Power Dissipation TA=25°C 1.78W TA=70°C 1.14W RθJA, Thermal Resistance-Junction to Ambient t ≤ 10s 35°C/W Steady StateNOTE3 70°C/W IASNOTE4, Avalanche Current, Single Pulse L=0.1mH 50A EASNOTE4, Avalanche Energy, Single Pulse L=0.1mH 125mJ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Package is limited by 50A. NOTE2: Pulse width is limited by maximum junction temperature. NOTE3: Surface Mounted on 1in2 pad area, t ≤ 999s. NOTE4: UIS tested and pulse width is limited by maximum junction temperature 150°C (initial temperature TJ = 25°C).

AiT Semiconductor Inc. www.ait-ic.com AM7520 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2016 RELEASED - - 4 -

ELECTRICAL CHARACTERISTICS

TA = 25°C, unless Otherwise Noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=250μA 30 - - V Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V - - 1 μA TJ=85°C - - 30 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250μA 1.4 1.7 2.5 V Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA Drain-Source On-state Resistance RDS(ON) NOTE5 VGS=10V, IDS=20A - 1.5 1.8 mΩ TJ=125°C - 2.3 - VGS=4.5V, IDS=20A - 2.3 3.1 Forward Transconductance Gfs VDS=5V, IDS=20A - 25 - S Diode Characteristics Diode Forward Voltage VSDNOTE5 ISD=20A, VGS=0V - 0.8 1.1 V Reverse Recovery Time trr IF=20A, dlSD/dt=100A/μs - 48.9 - ns Charge Time ta - 24.4 - Discharge Time tb - 24.5 - Reverse Recovery Charge Qrr - 42.8 - nC Dynamic CharacteristicsNOTE6 Gate Resistance RG VGS=0V, VDS=0V,F=1MHz - 1 - Ω Input Capacitance Ciss VGS=0V, VDS=15V, Frequency=1.0MHz - 2883 - pF Output Capacitance Coss - 1857 - Reverse Transfer Capacitance Crss - 125 - Turn-on Delay Time td(ON) VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω - 18 33 ns Turn-on Rise Time tr - 10.7 20 Turn-off Delay Time td(OFF) - 48.3 88 Turn-off Fall Time tf - 71.2 129 Gate Charge CharacteristicsNOTE6 Total Gate Charge Qg VDS=15V, VGS=4.5V, IDS=20A - 22 30.8 nC Total Gate Charge Qg VDS=15V, VGS=10V,IDS=20A - 42.5 59.5 Threshold Gate Charge Qgth - 6.4 9.0 Gate-Source Charge Qgs - 10.6 14.8 Gate-Drain Charge Qgd - 5.1 7.1 NOTE5: Pulse test; pulse width≤300μs, duty cycle≤2%. NOTE 6: Guaranteed by design, not subject to production testing.

AiT Semiconductor Inc. www.ait-ic.com AM7520 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2016 RELEASED - - 5 - TYPICAL PERFORMANCE CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Safe Operation Area 4. Thermal Transient Impedance 5. Safe Operation Area 6. Thermal Transient Impedance

AiT Semiconductor Inc. www.ait-ic.com AM7520 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2016 RELEASED - - 6 - 7. Output Characteristics 8. Drain-Source On Resistance 9. Gate-Source On Resistance 10. Gate Threshold Voltage 11. Drain-Source On Resistance 12. Source-Drain Diode Forward

AiT Semiconductor Inc. www.ait-ic.com AM7520 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2016 RELEASED - - 7 - 13. Capacitance 14. Gate Charge 15. Transfer Characteristics

AiT Semiconductor Inc. www.ait-ic.com AM7520 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2016 RELEASED - - 8 - DETAILED INFORMATION Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms

AiT Semiconductor Inc. www.ait-ic.com AM7520 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2016 RELEASED - - 9 -

PACKAGE INFORMATION

Dimension in DFN8 (Unit: mm) Symbol MILLIMETERS INCHES Min Max Min Max A 0.700 0.800 0.028 0.032 A1 0.000 0.050 0.000 0.002 A2 0.100 0.250 0.004 0.010 b 0.240 0.350 0.009 0.014 D 3.150 3.400 0.124 0.134 D1 2.100 2.350 0.083 0.093 E 3.150 3.400 0.124 0.134 E1 2.150 2.350 0.850 0.093 e 0.600 0.700 0.024 0.028 G 0.475 0.575 0.019 0.023 L 0.350 0.450 0.014 0.018

AiT Semiconductor Inc. www.ait-ic.com AM7520 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2016 RELEASED - - 10 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.