AM7423 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AM7423 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2016 RELEASED - - 1 - DESCRIPTION FEATURES The AM7423 is available in DFN8(3.3x3.3) package.
ORDERING INFORMATION
(3.3x3.3) AM7423J8R AM7423J8VR Note V: Halogen free Package R: Tape & Reel SPQ: 3,000pcs/ Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package -20V/-95A, RDS(ON) = 3.6mΩ(max.) @ VGS =-10V RDS(ON) = 4.6mΩ(max.) @ VGS =-4.5V RDS(ON) = 7mΩ(max.) @ VGS =-2.5V RDS(ON) = 10mΩ(max.) @ VGS =-1.8V HBM ESD protection level of 2.3kV typical 100% UIS + RG Tested Reliable and Rugged Note: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. Available in DFN8(3.3x3.3) package. APPLICATION Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. PIN DESCRIPTION P-Channel MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM7423 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2016 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 S Source
2 S Source
3 S Source
4 G Gate
5 D Drain
6 D Drain
7 D Drain
8 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM7423 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2016 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless Otherwise Noted VDSS, Drain-Source Voltage -20V VGSS, Gate-Source Voltage ±12V IDNOTE1, Continuous Drain Current (VGS=-4.5V) TA=25°C -25A TA=70°C -20A IDMNOTE1, Pulsed Drain Current (VGS=-4.5V) -100 * IDNOTE3, Continuous Drain Current TC=25°C -95A TC=100°C -60A ISNOTE1, Diode Continuous Forward Current -50A TJ, Maximum Junction Temperature 150°C IASNOTE4, Avalanche Current, Single pulse L=0.5mH -22A EASNOTE4, Avalanche Energy, Single pulse L=0.5mH 121mJ TSTG, Storage Temperature Range -55°C~ 150°C PDNOTE1, Maximum Power Dissipation TA=25°C 4.2W TA=70°C 2.7W PDNOTE3, Maximum Power Dissipation TC=25°C 62.5W TC=100°C 25W RθJANOE1,2, Thermal Resistance-Junction to Ambient t ≤ 10s 30°C/W Steady State 70°C/W RθJCNOTE3, Thermal Resistance-Junction to Case 2°C/W Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE *: Package limited. NOTE1: Surface Mounted on 1in2 pad area, t ≤ 10sec. NOTE2: Maximum under Steady State conditions is 75 °C/W. NOTE3: The power dissipation P D is based on T J(MAX) = 150°C, and it is useful for reducing junction -to-case thermal resistance (RθJC) when additional heat sink is used. NOTE4: UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature TJ=25°C).
AiT Semiconductor Inc. www.ait-ic.com AM7423 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2016 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless Otherwise Noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=-250μA -20 - - V Zero Gate Voltage Drain Current IDSS VDS=-16V, VGS=0V - - -1 μA TJ=85°C - - -30 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=-250μA -0.4 - -0.9 V Gate Leakage Current IGSS VGS=±12V, VDS=0V - - ±100 nA Drain-Source On-state Resistance RDS(ON) NOTE5 VGS=-10V, IDS=-20A - 3 3.6 mΩ VGS=-4.5V, IDS=-20A - 3.6 4.6 VGS=-2.5V, IDS=-20A - 4.9 7 VGS=-1.8V, IDS=-10A - 7 10 Diode Characteristics Diode Forward Voltage VSDNOTE5 ISD=-1A, VGS=0V - -0.5 -1.0 V Reverse Recovery Time trrNOTE6 ISD=-20A, dlSD/dt=100A/μs - 33 - ns Reverse Recovery Charge QrrNOTE6 - 17 - nC Dynamic CharacteristicsNOTE6 Input Capacitance Ciss VGS=0V, VDS=-10V, Frequency=1.0MHz - 5360 - pF Output Capacitance Coss - 1030 - Reverse Transfer Capacitance Crss 820 - Gate Resistance RG VGS=0V, VDS=0V,F=1MHz - 3 - Ω Turn-on Delay Time td(ON) VDD=-10V, RL=10Ω, IDS=-1A, VGEN=-4.5V, RG=6Ω - 19 - ns Turn-on Rise Time tr - 25 - Turn-off Delay Time td(OFF) - 228 - Turn-off Fall Time tf - 72 - Gate Charge CharacteristicsNOTE6 Total Gate Charge Qg VDS=-10V, VGS=-4.5V, IDS=-20A - 54 - nC Gate-Source Charge Qgs - 4.1 - Gate-Drain Charge Qgd - 17 - NOTE5: Pulse test; pulse width≤300μs, duty cycle≤2%. NOTE6: Guaranteed by design, not subject to production testing.
AiT Semiconductor Inc. www.ait-ic.com AM7423 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2016 RELEASED - - 5 - TYPICAL PERFORMANCE CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Safe Operation Area 4. Thermal Transient Impedance 5. Output Characteristics 6. Drain-Source On Resistance
AiT Semiconductor Inc. www.ait-ic.com AM7423 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2016 RELEASED - - 6 - 7. Gate-Source On Resistance 8. Gate Threshold Voltage 9. Drain-Source On Resistance 10. Source-Drain Diode Forward 11. Capacitance 12. Gate Charge
AiT Semiconductor Inc. www.ait-ic.com AM7423 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2016 RELEASED - - 7 - DETAILED INFORMATION Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms
AiT Semiconductor Inc. www.ait-ic.com AM7423 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2016 RELEASED - - 8 -
PACKAGE INFORMATION
Dimension in DFN8 (Unit: mm) Symbol MILLIMETERS INCHES Min Max Min Max A 0.700 0.800 0.028 0.032 A1 0.000 0.050 0.000 0.002 A2 0.100 0.250 0.004 0.010 b 0.240 0.350 0.009 0.014 D 3.150 3.400 0.124 0.134 D1 2.100 2.350 0.083 0.093 E 3.150 3.400 0.124 0.134 E1 2.150 2.350 0.850 0.093 e 0.600 0.700 0.024 0.028 G 0.475 0.575 0.019 0.023 L 0.350 0.450 0.014 0.018
AiT Semiconductor Inc. www.ait-ic.com AM7423 MOSFET P-CHANNEL ENHANCEMENT MODE REV1.0 - MAY 2016 RELEASED - - 9 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or servic e without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, inte nded, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involv e potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.