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AiT Semiconductor Inc. www.ait-ic.com AM7414 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - JUN 2017 RELEASED - - 1 - DESCRIPTION FEATURES The AM7414 is available in DFN8(3x3) Package
ORDERING INFORMATION
DFN8(3x3) SPQ: 5,000pcs/Reel AM7414J8R AM7414J8VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products 60V/23A, R DS(ON)= 25mΩ (Max.) @ VGS=10V RDS(ON)= 28.5mΩ (Max.) @ VGS=4.5V Reliable and Rugged ESD Protection 100% UIS + Rg Tested Available in DFN8(3x3) Package APPLICATION DC-DC Converter. Motor Control Power Tools. Load Switching. N-CHANNEL MOSFET N-Channel MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM7414 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - JUN 2017 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 S Source
2 S Source
3 S Source
4 G Gate
5 D Drain
6 D Drain
7 D Drain
8 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM7414 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - JUN 2017 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise specified VDSS, Drain-Source Voltage 60V VGSS, Gate-Source Voltage ±16V TJ, Maximum Junction Temperature 150°C TSTG, Storage Temperature Range -55°C ~150°C IS, Diode Continuous Forward Current TC=25°C 11A ID, Continuous Drain Current TC=25°C 23A TC=100°C 14.8A IDMNOTE1, Pulsed Drain Current TC=25°C 92A PD, Maximum Power Dissipation TC=25°C 27.7W TC=100°C 11.1W RθJC, Thermal Resistance-Junction to Case 4.5°C/W ID, Continuous Drain Current TA=25°C 5.4A TA=70°C 4.4A PD, Maximum Power Dissipation TA=25°C 1.5W TA=70°C 1W RθJANOTE3, Thermal Resistance-Junction to Ambient Steady State 80°C/W IASNOTE2, Avalanche Current, Single pulse L=0.5mH 13A EASNOTE2, Avalanche Energy, Single pulse L=0.5mH 42mJ Stresses above may cause permanent damage to the device. T hese are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Pulse width is limited by max. junction temperature. NOTE2: UIS tested and pulse width limited by maximum junction temperature 150℃ (initial temperature TJ=25℃). NOTE3: Surface Mounted on 1in2 pad area.
AiT Semiconductor Inc. www.ait-ic.com AM7414 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - JUN 2017 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TA=25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250μA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=48V,VGS=0V - - 1 μA TJ=85°C - - 30 Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.7 1.3 1.9 V Gate Leakage Current IGSS VGS=±16V,VDS=0V - - ±100 nA Drain-Source On-State Resistance RDS(ON) NOTE4 VGS=10V,ID=15A - 21 25 mΩ VGS=4.5V,ID=10A - 22 28.5 Diode Characteristics Diode Forward Voltage VSD NOTE4 ISD=8A, VGS=0V - 0.8 1.3 V Reverse Recovery Time trr ISD=10A, dlSD/dt=100A/μs - 24 - ns Reverse Recovery Charge Qrr - 28 - nC Dynamic Characteristics NOTE 5 Gate Resistance RG VGS=0V,VDS=0V, f=1MHz - 1 - Ω Input Capacitance Clss VGS=0V,VDS=30V, Frequency=1.0MHz - 1180 1535 pF Output Capacitance Coss - 98 - Reverse Transfer Capacitance Crss - 48 - Turn-on Delay Time td(on) VDD=30V, RL=30Ω, IDS=1A, VGEN=10V RG=6Ω - 12 22 ns Turn-on Rise Time tr - 6 11 Turn-off Delay Time td(off) - 33 60 Turn-off Fall Time tf - 9 16 Gate Charge Characteristics NOTE 5 Total Gate Charge Qg VDS=30V , VGS=4.5V ID=10A - 11 - nC Total Gate Charge Qg VDS=30V,VGS=10V, ID=10A - 24 33.5 Gate-Source Charge Qgs - 2.5 - Gate-Drain Charge Qgd - 4 - NOTE4: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. NOTE5: Guaranteed by design, not subject to production testing.
AiT Semiconductor Inc. www.ait-ic.com AM7414 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - JUN 2017 RELEASED - - 5 - TYPICAL CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Safe Operation Area 4. Thermal Transient Impedance 5. Safe Operation Area 6. Thermal Transient Impedance
AiT Semiconductor Inc. www.ait-ic.com AM7414 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - JUN 2017 RELEASED - - 6 - 7. Output Characteristics 8. Drain-Source On-Resistance 9. Gate-Source On Resistance 10. Gate Threshold Voltage 11. Drain-Source On Resistance 12. Source-Drain Diode Forward
AiT Semiconductor Inc. www.ait-ic.com AM7414 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - JUN 2017 RELEASED - - 7 - 13. Capacitance 14. Gate Charge 15. Transfer Characteristics
AiT Semiconductor Inc. www.ait-ic.com AM7414 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - JUN 2017 RELEASED - - 8 - Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms
AiT Semiconductor Inc. www.ait-ic.com AM7414 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - JUN 2017 RELEASED - - 9 -
PACKAGE INFORMATION
Dimension in DFN8(3x3) Package (Unit: mm) Symbol Millimeters Inches Min. Max. Min. Max. A 0.80 1.00 0.031 0.039 A1 0.00 0.05 0.000 0.002 A3 0.10 0.25 0.004 0.010 b 0.24 0.35 0.009 0.014 D 2.90 3.30 0.114 0.130 D1 2.90 3.10 0.114 0.122 D2 2.25 2.45 0.089 0.096 E 3.10 3.30 0.122 0.130 E1 2.90 3.10 0.114 0.122 E2 1.65 1.85 0.065 0.073 E3 0.56 0.58 0.022 0.023 e 0.65 BSC 0.026 BSC K 0.475 0.775 0.019 0.031 L 0.30 0.50 0.012 0.020
AiT Semiconductor Inc. www.ait-ic.com AM7414 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - JUN 2017 RELEASED - - 10 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or servic e without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc.'s integrated circuit products are not designed, int ended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.