AM7410 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AM7410 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2019 RELEASED - - 1 - DESCRIPTION FEATURES AM7410 is available in DFN8 (3x3) package. 63V/31A, RDS(ON) = 20mΩ(max.) @ VGS =10V RDS(ON) = 24mΩ(max.) @ VGS =4.5V 100% UIS + Rg Tested Reliable and Rugged Available in DFN8 (3x3) package. ORDERING INFORMATION APPLICATION Package Type Part Number DFN8(3x3) SPQ: 5,000pcs/Reel AM7410J8R AM7410J8VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products DC-DC Converter. Motor Control. Power Tools. Load Switching. PIN DESCRIPTION N-Channel MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM7410 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2019 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 S Source
2 S Source
3 S Source
4 G Gate
5 D Drain
6 D Drain
7 D Drain
8 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM7410 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2019 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage 63V VGSS, Gate-Source Voltage ±20V TJ, Maximum Junction Temperature 150℃ TSTG, Storage Temperature Range -55℃~+150℃ IS, Diode Continuous Forward Current TC=25°C 15A ID, Continuous Drain Current TC=25°C 31A TC=100°C 20A IDMNOTE1, Pulsed Drain Current TC=25°C 124A PD, Maximum Power Dissipation TC=25°C 35W TC=100°C 14W RθJC, Thermal Resistance-Junction to Case 3.5°C/W ID, Continuous Drain Current TA=25°C 7.5A TA=70°C 6A PD, Maximum Power Dissipation TA=25°C 2W TA=70°C 1.3W RθJANOTE3, Thermal Resistance-Junction to Ambient 60°C/W IASNOTE2, Avalanche Current, Single Pulse L=0.5mH 15A EASNOTE2, Avalanche Energy, Single Pulse L=0.5mH 56mJ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Pulse width limited by max. junction temperature. NOTE2: UIS tested and pulse width limited by maximum junction temperature 150°C (initial temperature TJ=25°C). NOTE3: Surface Mounted on 1in2 pad area.
AiT Semiconductor Inc. www.ait-ic.com AM7410 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2019 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=250μA 63 - - V Zero Gate Voltage Drain Current IDSS VDS=48V, VGS=0V - - 1 μA TJ=85°C - - 30 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250μA 1 2 3 V Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA Drain-Source On-state Resistance RDS(ON) NOTE4 VGS=10V, IDS=15A - 16 20 mΩ VGS=4.5V, IDS=12A - 18 24 Diode Characteristics Diode Forward Voltage VSD NOTE4 ISD=15A, VGS=0V - 0.8 1.3 V Reverse Recovery Time trr ISD=15A, dlSD/dt=100A/μs - 23 - ns Reverse Recovery Charge Qrr - 25 - nC Dynamic CharacteristicsNOTE5 Gate Resistance RG VGS=0V, VDS=0V, f=1MHz - 2.5 - Ω Input Capacitance Ciss VGS=0V, VDS=30V, Frequency=1.0MHz - 1370 1780 pF Output Capacitance Coss - 135 - Reverse Transfer Capacitance Crss - 60 - Turn-on Delay Time td(on) VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω - 14 26 ns Turn-on Rise Time tr - 8 15 Turn-off Delay Time td(off) - 38 69 Turn-off Fall Time tf - 12 22 Gate Charge CharacteristicsNOTE5 Total Gate Charge Qg VDS=30V, VGS=4.5V, IDS=15A - 12 - nC Total Gate Charge Qg VDS=30V, VGS=10V, IDS=15A - 26 37 Gate-Source Charge Qgs - 5 - Gate-Drain Charge Qgd - 5 - NOTE4: Pulse test; pulse width≤300μs, duty cycle≤2%. NOTE5: Guaranteed by design, not subject to production testing.
AiT Semiconductor Inc. www.ait-ic.com AM7410 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2019 RELEASED - - 5 - TYPICAL CHARACTERISTICS 1. Power Dissipation 2. Drain Current 3. Safe Operation Area 4. Thermal Transient Impedance 5. Output Characteristics 6. Drain-Source On Resistance
AiT Semiconductor Inc. www.ait-ic.com AM7410 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2019 RELEASED - - 6 - 7. Gate-Source On Resistance 8. Gate Threshold Voltage 9. Drain-Source On Resistance 10. Source-Drain Diode Forward 11. Capacitance 12. Gate Charge
AiT Semiconductor Inc. www.ait-ic.com AM7410 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2019 RELEASED - - 7 - 13. Transfer Characteristics Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms
AiT Semiconductor Inc. www.ait-ic.com AM7410 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2019 RELEASED - - 8 -
PACKAGE INFORMATION
Dimension in DFN8(3x3) Package (Unit: mm) Symbol Millimeters Inches Min. Max. Min. Max. A 0.70 1.00 0.028 0.039 A1 0.00 0.050 0.000 0.0020 A3 0.203 REF 0.008 REF b 0.25 0.40 0.010 0.016 D 2.90 3.10 0.114 0.122 D1 1.65 1.90 0.065 0.075 E 2.90 3.10 0.114 0.122 E1 2.25 2.55 0.089 0.100 e 0.650 BSC 0.026 BSC L 0.30 0.50 0.012 0.020 K 0.43 - 0.017 -
AiT Semiconductor Inc. www.ait-ic.com AM7410 MOSFET N-CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2019 RELEASED - - 9 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version o f relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support app lications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server property, or envi ronmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application suppo rt. AiT warrants the performance of its products of the specifications applicable at the time of sale.