AM7407 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AM7407 MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - FEB 2019 RELEASED - - 1 - DESCRIPTION FEATURES AM7407 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on -state resistance, provide superior, fast switching performa nce, and withstand high energy pulse in the avalanche and commutation mode. AM7407 is available in a DFN8(3.3x3.3) package. VDS = -20V, ID = -42A RDS(ON)=6.5mΩ(Typ.)@VGS=-10V RDS(ON)=7.8mΩ(Typ.)@VGS=-4.5V RDS(ON)=10mΩ(Typ.)@VGS=-2.5V RDS(ON)=13mΩ(Typ.)@VGS=-1.8V Available in a DFN8(3.3x3.3) package. ORDERING INFORMATION APPLICATION Package Type Part Number DFN8 SPQ: 3,000pcs/Reel AM7407J8R AM7407J8VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Portable Equipment Power Management Battery Powered Systems PIN DESCRIPTION
AiT Semiconductor Inc. www.ait-ic.com AM7407 MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - FEB 2019 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 S Source
2 S Source
3 S Source
4 G Gate
5 D Drain
6 D Drain
7 D Drain
8 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM7407 MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - FEB 2019 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage -20V VGSS, Gate-Source Voltage ±12V ID, Continuous Drain Current (VGS=-4.5V) TC=25°C -42A TC=100°C -26.6A IDM, Pulsed Drain CurrentNOTE1 -120A ID, Continuous Drain Current (VGS=-4.5V) TA=25°C -14A TA=70°C -11.2A PD, Power DissipationNOTE2 TA=25°C 3.1W TA=70°C 2W IAS, Avalanche CurrentNOTE1 -35A EAS, Single Pulse Avalanche energy L=0.1mH NOTE1,6 61mJ PD, Power DissipationNOTE3 TC=25°C 29W TC=100°C 11.6W TJ, Operation Junction Temperature -55℃~+150℃ TSTG, Storage Temperature Range -55℃~+150℃ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS Parameter Symbol Typ. Max. Units Thermal Resistance Junction to AmbientNOTE2 t≦10s RθJA - 40 °C/W Thermal Resistance Junction to AmbientNOTE2,4 Steady-State - 65 Thermal Resistance Junction to Case Steady-State RθJC - 4.3 NOTE1: Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C. NOTE2: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board in a still air environment with maximum junction temperature TJ(MAX)=150°C (initial temperature TA=25°C). NOTE3: TJ(MAX)=150°C, using junction-to-ambient thermal resistance, t ≦10sec. NOTE4: TJ(MAX)=150°C, using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used.
AiT Semiconductor Inc. www.ait-ic.com AM7407 MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - FEB 2019 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Static Parameters Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=-250μA -20 - - V Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -0.4 -0.5 -1 V Gate Leakage Current IGSS VDS=0V, VGS=±12V - - ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V TJ =25°C - - -1 μA VDS=-16V,VGS =0V TJ =75°C - - -10 Drain-source On-ResistanceNOTE5 RDS(ON) VGS =-10V,ID=-14A - 6.5 8.5 mΩ VGS =-4.5V,ID=-14A - 7.8 10 VGS=-2.5V, ID=-10A - 10 13 VGS=-1.8V, ID=-5A - 13 18 Forward Transconductance Gfs VDS=-10V, ID=-10A - 25 - S Diode Characteristics Diode Forward VoltageNOTE5 VSD IS=-1A, VGS=0V - -0.6 -1 V Continuous Source Current IS - - -42 A Reverse Recovery Time trr IS=-14A, dl/dt=100A/μs - 15 - ns Reverse Recovery Charge Qrr - 6.2 - nC Dynamic and Switching Parameters Total Gate Charge Qg VDS=-10V, VGS=-4.5V, ID=-14A - 41 55.4 nC Gate-Source Charge Qgs - 6.2 8.4 Gate-Drain Charge Qgd - 10.6 14.3 Input Capacitance Ciss VDS=-10V, VGS=0V, f=1.0MHz - 3342 - pF Output Capacitance Coss - 290 - Reverse Transfer Capacitance Crss - 256 - Turn-On TimeNOTE5 td(on) VDD=-10V, VGEN=-4.5V, RG=3.3Ω, ID=-14A - 14 27 ns tr - 52 99 Turn-Off TimeNOTE5 td(off) - 110 209 tf - 32 61 NOTE5: The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2%. NOTE6: The EAS data shows Max, tested and pulse width limited by TJ(MAX)=150°C (initial temperature TJ=25°C).
AiT Semiconductor Inc. www.ait-ic.com AM7407 MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - FEB 2019 RELEASED - - 5 - TYPICAL CHARACTERISTICS 1. Output Characteristics 2. Drain-Source On Resistance 3. Gate Charge 4. Capacitance 5. Gate Threshold Voltage 6. Power Dissipation
AiT Semiconductor Inc. www.ait-ic.com AM7407 MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - FEB 2019 RELEASED - - 6 - 7. RDS(ON) vs. Junction Temperature 8. Drain Current vs. TC 9. Maximum Safe Operation Area 10. Thermal Transient Impedance 11. Gate Charge Waveform 12. Switching Time Waveform
AiT Semiconductor Inc. www.ait-ic.com AM7407 MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - FEB 2019 RELEASED - - 7 -
PACKAGE INFORMATION
Dimension in DFN8(3.3x3.3) (Unit: mm) Symbol Millimeters Inches Min Max Min Max A 0.700 0.800 0.028 0.031 b 0.250 0.350 0.010 0.014 c 0.100 0.250 0.004 0.010 D 3.300 3.400 0.130 0.134 D1 3.250 3.450 0.128 0.136 D2 1.780 1.980 0.070 0.078 D3 - 0.130 - 0.005 E 3.200 3.400 0.126 0.134 E1 3.000 3.200 0.118 0.126 E2 2.390 2.590 0.094 0.102 e 0.65 BSC 0.026 BSC H 0.300 0.500 0.012 0.020 L 0.300 0.500 0.012 0.020 L1 - 0.130 - 0.005 M - 0.150 - 0.006 θ 0° 12° 0° 15°
AiT Semiconductor Inc. www.ait-ic.com AM7407 MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET REV1.0 - FEB 2019 RELEASED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor I nc.'s integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.