AM7401 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com AM7401 MOSFET SINGLE P-CHANNEL REV1.0 - JAN 2019 RELEASED - - 1 - DESCRIPTION FEATURES AM7401 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on -state resistance, provide superior, fast switching performa nce, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency load switching applications. AM74001 is available in a DFN8(3.3x3.3) package. VDS= -30V, ID= -39A RDS(ON)=10.5mΩ(Typ.)@ VGS=-10V RDS(ON)=14mΩ(Typ.)@ VGS=-4.5V 100% UIS and Rg tested Available in a DFN8(3.3x3.3) package. ORDERING INFORMATION APPLICATION Package Type Part Number DFN8(3.3x3.3) SPQ: 3,000pcs/Reel AM7401J8R AM7401J8VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products LED Application Power Management Load switch PIN DESCRIPTION
AiT Semiconductor Inc. www.ait-ic.com AM7401 MOSFET SINGLE P-CHANNEL REV1.0 - JAN 2019 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 S Source
2 S Source
3 S Source
4 G Gate
5 D Drain
6 D Drain
7 D Drain
8 D Drain
AiT Semiconductor Inc. www.ait-ic.com AM7401 MOSFET SINGLE P-CHANNEL REV1.0 - JAN 2019 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage -30V VGSS, Gate-Source Voltage ±25V ID, Continuous Drain Current TC=25°C -39A TC=100°C -24.7A IDM, Pulsed Drain CurrentNOTE1 -156A ID, Continuous Drain Current TA=25°C -12.3A TA=70°C -10A PD, Power DissipationNOTE2 TA=25°C 3.1W TA=70°C 2W IAS, Avalanche CurrentNOTE1 -30A EAS, Single Pulse Avalanche energy L=0.1mHNOTE1,6 45mJ PD, Power DissipationNOTE3 TC=25°C 31.3W TC=100°C 12.5W TJ, Operation Junction Temperature -55℃~+150℃ TSTG, Storage Temperature Range -55℃~+150℃ Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS Parameter Symbol Limit Units Thermal Resistance Junction to AmbientNOTE2 t≦10s RθJA °C/W Thermal Resistance Junction to AmbientNOTE2,4 Steady-State Thermal Resistance Junction to Case RθJC 4 °C/W
AiT Semiconductor Inc. www.ait-ic.com AM7401 MOSFET SINGLE P-CHANNEL REV1.0 - JAN 2019 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted Parameter Symbol Conditions Min Typ. Max Units Static Parameters Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=-250μA -30 - - V Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1 -1.6 -2.5 V Gate Leakage Current IGSS VDS=0V, VGS=±25V - - ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V TJ =25°C - - -1 μA VDS=-24V,VGS =0V TJ =75°C - - -10 Drain-source On-ResistanceNOTE5 RDS(ON) VGS =-10V,ID=-12.3A - 10.5 13 mΩ VGS =-4.5V,ID=-10A - 14 18 Forward Transconductance GFS VDS =-10V,ID=-10A - 12.5 - S Diode Characteristics Diode Forward VoltageNOTE5 VSD IS=-1A, VGS=0V - -0.7 -1 V Continuous Source Current IS - - -39 A Reverse Recovery Time trr IS =-10A, dl/dt=100A/μs - 13.8 - ns Reverse Recovery Charge Qrr - 12.3 - nC Dynamic and Switching Parameters Total Gate Charge(10V) Qg VDS=-15V, VGS=-10V, ID=-10A - 36 48.6 nC Total Gate Charge(4.5V) Qg - 18 24.3 Gate-Source Charge Qgs - 8.1 10.9 Gate-Drain Charge Qgd - 11.5 15.5 Input Capacitance Ciss VDS=-15V, VGS=0V, f=1MHz - 2590 - pF Output Capacitance Coss - 283 - Reverse Transfer Capacitance Crss - 172 - Gate Resistance Rg VGS=0V, VDS=0V, f=1MHz - 8.8 - Ω Turn-On TimeNOTE5 td(on) VDD=-15V, VGEN=-10V, RG=3Ω, ID=-1A - 19.1 36 ns tr - 4.8 9 Turn-Off TimeNOTE5 td(off) - 58 110 tf - 11.5 22 NOTE1: Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C. NOTE2: Measure the value in a still air environment at TA=25°C, using an installation mounted on a 1 in2 FR-4 board, maximum junction temperature TJ(MAX)=150°C. NOTE3: Using junction-to-case thermal resistance, dissipation limit in the case of additional heat. NOTE4: TJ(MAX)=150°C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used. NOTE5: The pulse test width is ≤300μs and the duty cycle ≦ 2%. NOTE6: The EAS data shows Maximum, tested and pulse width limited by maximum.
AiT Semiconductor Inc. www.ait-ic.com AM7401 MOSFET SINGLE P-CHANNEL REV1.0 - JAN 2019 RELEASED - - 5 - TYPICAL CHARACTERISTICS 1. Output Characteristics 2. Drain-Source On Resistance 3. Gate Charge 4. Capacitance 5. Gate Threshold Voltage 6. Power Dissipation
AiT Semiconductor Inc. www.ait-ic.com AM7401 MOSFET SINGLE P-CHANNEL REV1.0 - JAN 2019 RELEASED - - 6 - 7. RDS(ON) vs Junction Temperature 8. Drain Current vs. TC 9. Maximum Safe Operation Area 10. Thermal Transient Impedance 11. Gate Charge Waveform 12. Switching Time Waveform
AiT Semiconductor Inc. www.ait-ic.com AM7401 MOSFET SINGLE P-CHANNEL REV1.0 - JAN 2019 RELEASED - - 7 -
PACKAGE INFORMATION
Dimension in DFN8(3.3x3.3) (Unit: mm) Symbol Millimeters Inches Min Max Min Max A 0.700 0.800 0.028 0.031 b 0.250 0.350 0.010 0.014 c 0.100 0.250 0.004 0.010 D 3.300 3.400 0.130 0.134 D1 3.250 3.450 0.128 0.136 D2 1.780 1.980 0.070 0.078 D3 - 0.130 - 0.005 E 3.200 3.400 0.126 0.134 E1 3.000 3.200 0.118 0.126 E2 2.390 2.590 0.094 0.102 e 0.650 BSC. 0.026 BSC. H 0.300 0.500 0.012 0.020 L 0.300 0.500 0.012 0.020 L1 - 0.130 - 0.005 M - 0.150 - 0.006 θ 0° 12° 0° 15°
AiT Semiconductor Inc. www.ait-ic.com AM7401 MOSFET SINGLE P-CHANNEL REV1.0 - JAN 2019 RELEASED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.