AM7321P

AM7321P VBSEMI | Alldatasheet

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Technical content

P-Channel 12 V (G-S) MOSFET

FEATURES

• Halogen-free according to IEC 61249-2-21 Definition  TrenchFET ® Power MOSFET  Ultra Small DFN3x3 Chipscale Packaging Reduces Footprint Area, Profile (0.62 mm) and On-Resistance Per Footprint Area
• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

 PA Switch  Battery Switch  L oad Switch Notes: a. Based on TC = 25 °C. b. Surface mou nted on 1" x 1" FR4 board. c. t = 10 s. d. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. In this document, any reference to the Case represents the body of the DFN2X2 device and Foot is the bump. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a Qg (Typ.) - 12 0.015 at VGS = - 4.5 V - 35 nC0.021 at VGS = - 2.5 V - 0.023 at VGS = - 1.8 V - S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise not ed) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 12 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID A TC = 70 °C - TA = 25 °C - 0b, c TA = 70 °C - 11b, c Pulsed Drain Current IDM - 80 Continuous Source-Drain Diode Current TC = 25 °C IS - 26.7 TA = 25 °C - 3.5b, c Maximum Pow er Dissipation TC = 25 °C PD W TC = 70 °C 26 TA = 25 °C 3.9b, c TA = 70 °C 1.96b, c Operating Junction and St orage Temperature Range TJ, Tstg - 55 to 150 Package Reflow Conditionsd IR/Convection 260 Top View Pin Desc ription DDDD SSSG DFN3x3-8(punch type) Top View Bottom View AM7321P www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

Notes: a. Su rface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 72 °C/W. THERMAL RESI STANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, b RthJA 31 42 °C/W Maximum Junction-to-F oot (Drain) Steady State RthJF 13 16 SPECIFICATIONS (TJ = 25 °C, unless oth erwise noted) Parameter Symbol Test Conditio ns Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 12 V VDS Temperature Coefficient VDS/TJ ID = - 250 µA - 13.3 mV/°CVGS(th) Temperature Coefficient VGS(th)/TJ 2.4 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.5 - 1.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = 5 V - 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 12 V, VGS = 0 V - 1 µAVDS = - 12 V, VGS = 0 V, TJ = 70 °C - 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = - 4.5 V - 20 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 1 A 0.015 VGS = - 2.5 V, ID = - 1 A 0.021 VGS = - 1.8 V, ID = - 1 A 0.023 Forward Transconductancea gfs VDS = - 4 V, ID = - 1 A 8.3 S Dynamicb Input Capacitance Ciss VDS = - 6 V, VGS = 0 V, f = 1 MHz 2220 pFOutput Capacitance Coss 865 Reverse Transfer Capacitance Crss 555 Total Gate Charge Qg VDS = - 6 V, VGS = - 5 V, ID = - 1 A 38 57 nCVDS = - 6 V, VGS = - 4.5 V, ID = - 1 A 35 53 Gate-Source Charge Qgs 7.3 Gate-Drain Charge Qgd 5.9 Gate Resistance Rg VGS = - 0.1 V, f = 1 MHz 28  Tur n- On Delay Time td(on) VDD = - 6 V, RL = 4  ID  - 1 A, VGEN = - 4.5 V, Rg = 6  14 21 ns Rise Time tr 25 40 Turn-Off Delay T ime td(off) 380 570 Fall Ti me tf 240 360 AM7321P www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

Notes: a. Pulse test; pulse width  300 µs, du ty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond thos e listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, un less otherwise noted Parameter Symbol Test Conditio ns Min. Typ. Max. Unit Drain-Source Bod y Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 8 A Pulse Diode Forward Current ISM - 25 Body Diode Voltage VSD IS = - 1 A, VGS = 0 V - 0.65 - 1.2 V Body Diode Reverse Recov ery Time trr IF = - 1 A, dI/dt = 100 A/µs, TJ = 25 °C 311 467 ns Body Diode Revers e Recovery Charge Qrr 1.136 1.705 µC Reverse Reco very Fall Time ta 116 ns Reverse Recovery Rise Time tb 195 AM7321P www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain C urrent and Gate Voltage Gate Charge VGS = 5 V thru 2 V VGS = 1 V VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID VGS = 1.5 V 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 VGS = 2.5 V ID - Drain Current (A) VGS = 4.5 V RDS(on) - On-Resistance (m VGS = 1.8 V 0 5 10 15 20 25 30 35 40 ID = 1 A - Gate-to-Source Voltage (V) Qg - T otal Gate Charge (nC) VGS VDS = 6 V VDS = 9.6 V Transfer Characteristics Capacitance On-R esistance vs. Junction Temperature 0.0 2.5 5.0 7.5 10.0 TC = 25 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID TC = 125 °C TC = - 55 °C 1000 2000 3000 0369 1 2 Crss Coss Ciss VDS - Drain-to-Source V oltage (V) C - Capacitance (pF) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 ID = 1 A TJ - Junction T emperature (°C) RDS(on) - On-Resistance (Normalized) VGS = 4.5 V, 2.5 V VGS = 1.8 V AM7321P www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

TYPICAL CHARACTERISTICS (2 5 °C, unless otherwise noted) Source-Drain Diode Forward Vo ltage Threshold Voltage TJ = 25 °C TJ = 125 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)IS 0.001 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) VGS(th) (V) On-Resistance vs. Gate-to-Source Voltage Si ngle Pulse Power, Junction-to-Ambient 0.01 0.02 0.03 0.04 0.05 012345 ID = 1 A VGS - Gate-to-Source Voltage (V) RDS(on) - Drain-to-Source On-Resistance (m) TA = 25 °C TA = 125 °C 0.001 Time (s)

20 Power (W)

0.01 0.1 1 Safe Operating Area, Junction-to-Ambient 100 0.1 1 10 100 0.001 - Drain Current (A)I D

0.1 TA = 25 °C

Limited by RDS(on)* 1 s 10 s 0.01 VDS - Drain-to-Source Voltage (V) * VGS minimum V GS at which RDS(on) is specified BVDSS limited ID(on) limited IDM limited AM7321P www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

TYPICAL CHARACTERISTICS (25 ° C, unless otherwise noted) Current Derating* 25 50 75 100 125 150 ID - Drain Current (A) TF - Foot Temperature (°C) Power Derating 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Normalized Thermal Transient Impe dance, Junction-to-Ambient 10-3 10-2 1 10 60010-110-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Tr ansient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 72 °C/W 3. TJM - TA = PDMZthJA(t) Notes: 4. Surface Mounted PDM Normalized Thermal Transient Imp edance, Junction-to-Foot 10-3 10-2 1010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Tr ansient Thermal Impedance AM7321P www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. AM7321P www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com