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AiT Semiconductor Inc. www.ait-ic.com AM6N7002K MOSFET 60V DUAL N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2021 RELEASED - - 1 - DESCRIPTION FEATURES VDS=60V VGS=±20V ID(A)=0.29A RDS(ON)=1.5Ω(Typ.) @VGS=10V RDS(ON)=2.0Ω(Typ.) @VGS=4.5V The AM6N7002K is available in SC70-6 package ⚫ High Speed Switching ⚫ ESD Protection >±2kV HBM ⚫ Available in SC70-6 package ORDERING INFORMATION APPLICATIONS Package Type Part Number SC70-6 SPQ: 3,000pcs/Reel AM6N7002KC6R AM6N7002KC6VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products ⚫ Portable appliances ⚫ Analog switching application. N CHANNEL MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM6N7002K MOSFET 60V DUAL N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2021 RELEASED - - 2 - PIN DESCRIPTION Top View Pin # Symbol Function
1 S1 Source1
2 G1 Gate1
3 D2 Drain2
4 S2 Source2
5 G2 Gate2
6 D1 Drain1
AiT Semiconductor Inc. www.ait-ic.com AM6N7002K MOSFET 60V DUAL N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2021 RELEASED - - 3 - ABSOLUTE MAXIMUM RATINGS TA=25℃, unless otherwise noted VDS, Drain-Source Voltage 60V VGS, Gate-Source Voltage ±20V ID, Continuous Drain Current TA=25°C 0.29A TA=70°C 0.23A IDM, Pulsed Drain CurrentNOTE2 1A PD, Power DissipationNOTE1 TA=25°C 0.26W TA=70°C 0.17W TJ, Operation Junction Temperature -55°C ~ 150°C TSTG, Storage Temperature Range -55°C ~ 150°C ESD, Gate-Source ESD Rating (HBM) 2kV Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those i ndicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS Parameter Symbol Min. Unit Thermal Resistance Junction to AmbientNOTE1,3 teady-State RθJA 480 °C/W
AiT Semiconductor Inc. www.ait-ic.com AM6N7002K MOSFET 60V DUAL N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2021 RELEASED - - 4 -
ELECTRICAL CHARACTERISTICS
TA=25℃, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Parameters Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 60 - - V Gate Threshold Voltage VGS(th) VDS=VGS, ID=250µA 1 1.6 2.5 V Gate Leakage Current IGSS VDS=0V, VGS=±20V - - ±10 µA Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V, TJ=25℃ - - 1 µA VDS=12V, VGS=0V, TJ=85℃ - - 30 Drain-source On-ResistanceNOTE4 RDS(ON) VGS=10V, ID=0.26A - 1.5 1.8 Ω VGS=4.5V, ID=0.2A - 2 2.5 Diode Characteristics Diode Forward VoltageNOTE4 VSD IS=0.2A, VGS=0V - - 1 V Diode Continuous Forward Current IS - - 0.15 A Reverse Recovery Time trr IS=0.4A, dl/dt=100A/μs - 40 - ns Reverse Recovery Charge Qrr - 39 - nC Dynamic and Switching ParametersNOTE5 Total Gate Charge Qg VDS=15V, VGS=10V, ID=0.4A - 0.65 - nC Gate-Source Charge Qgs - 0.1 - Gate-Drain Charge Qgd - 0.21 - Input Capacitance Ciss VDS=25V, VGS=0V, f=1MHz - 31 - pF Output Capacitance Coss - 4.2 - Reverse Transfer Capacitance Crss - 3 - Turn-On Time td(on) VDD=30V, VGS=10V, RG=25Ω, ID=0.4A - 3.8 7 ns tr - 3.6 6.8 Turn-Off Time td(off) - 16 30 tf - 10 19 NOTE1: Surface mounted on FR4 board using the minimum recommended pad size. NOTE2: Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C. NOTE3: Using ≤ 10s junction-to-ambient thermal resistance is base on TJ(MAX)=150°C. NOTE4: Pulse test width ≤300μs and duty cycle ≤ 2%. NOTE5: Guaranteed by design, not subject to production testing.
AiT Semiconductor Inc. www.ait-ic.com AM6N7002K MOSFET 60V DUAL N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2021 RELEASED - - 5 - TYPICAL CHARACTERISTICS 1. Output Characteristics 2. Drain-Source On Resistance 3. Gate Charge 4. Capacitance 5. Gate Threshold Voltage 6. Power Dissipation
AiT Semiconductor Inc. www.ait-ic.com AM6N7002K MOSFET 60V DUAL N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2021 RELEASED - - 6 - 7. Drain-Source On Resistance 8. Drain Current vs TJ 9. Maximum Safe Operation Area 10. Thermal Transient Impedance 11. Gate Chrge Waveform 12. Switching Time Waveform
AiT Semiconductor Inc. www.ait-ic.com AM6N7002K MOSFET 60V DUAL N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2021 RELEASED - - 7 -
PACKAGE INFORMATION
Dimension in SC70-6 (Unit: mm) Symbol Inches Millimeters Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.800 1.000 0.031 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.250 0.004 0.010 D 1.800 2.200 0.071 0.087 E 1.150 1.350 0.045 0.053 E1 2.000 2.400 0.079 0.092 e 0.650 BSC 0.026 BSC e1 1.200 1.400 0.047 0.055 L 0.100 0.350 0.004 0.014 θ 0° 8° 0° 8°
AiT Semiconductor Inc. www.ait-ic.com AM6N7002K MOSFET 60V DUAL N-CHANNEL ENHANCEMENT MODE REV1.0 - MAR 2021 RELEASED - - 8 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the r ight to make changes to any its product, specifications, to discontinue any int egrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the info rmation being relied on is current. AiT Semiconductor Inc. 's integrated circui t products are not designed, intended, authorized, or warrante d to be suitable for use in life suppo rt applications, devices or systems or other critical applications. Use of A iT products in such applications is understood to be fully at the risk of the c ustomer. As used herein may involve potential risks of de ath, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to cust omer p roduct design or applica tion support. AiT warrants the performance of its products of the specifications applicable at the time of sale.